Semiconductor structure and method for fabricating the same
Semiconductor structure and fabrication method are provided. The method includes providing a substrate including a first region and a second region; forming a plurality of fins on the first region of the substrate; forming a first isolation structure on the first region and the second region of the substrate; forming a gate structure and a dummy gate structure each across fins and the first isolation structure at the first region; forming an epitaxial layer in each fin on two sides of the gate structure; forming a first opening by etching a portion of each of the first isolation structure and the substrate that are at the second region; filling the first opening with a conductive material layer; removing the dummy gate structure and a portion of the conductive material layer in the first opening to form a power rail; and forming a second isolation structure in a second opening.
1. A method for fabricating a semiconductor structure, comprising:
providing a substrate including a first region and a second region, and forming a plurality of fins on the first region of the substrate;
forming a first isolation structure on the first region and the second region of the substrate;
forming a gate structure and a dummy gate structure each across the plurality of fins and the first isolation structure that are at the first region;
forming an epitaxial layer in each fin on two sides of the gate structure;
forming a first opening by etching a portion of each of the first isolation structure and the substrate that are at the second region;
filling the first opening with a conductive material layer;
removing the dummy gate structure and a portion of the conductive material layer in the first opening to form a power rail;
forming a second opening by etching the plurality of fins and the first isolation structure that are at the first region, wherein the second opening passes through the plurality of fins along a direction perpendicular to an extending direction of the plurality of fins; and
forming a second isolation structure in the second opening.
2. The method according to claim 1 , wherein:
the conductive material layer is made of a material including ruthenium, copper, graphene, or a combination thereof.
3. The method according to claim 1 , wherein:
the first opening is filled with the conductive material layer by an electrochemical deposition process.
4. The method according to claim 1 , wherein:
the second isolation structure is made of a material including silicon oxide, silicon oxynitride, silicon nitride, or a combination thereof.
5. The method according to claim 1 , further including:
simultaneously removing the dummy gate structure and the portion of the conductive material layer.
6. The method according to claim 1 , wherein removing the dummy gate structure and the portion of the conductive material layer includes a dry etching process including:
an etching gas, including carbon tetrafluoride, boron trichloride, oxygen, chlorine, helium, or a combination thereof;
an etching pressure of about 2 mTorr to about 100 mTorr; and
an etching temperature of about 0° C. to about 150° C.
7. The method according to claim 1 , wherein etching the portion of each of the first isolation structure and the substrate that are at the second region includes:
etching the portion of the first isolation structure at the second region till exposing a surface of the substrate to form a first trench; and
along the first trench, continuously etching the portion of the substrate to form the first opening.
8. The method according to claim 7 , wherein etching the portion of the first isolation structure at the second region includes:
forming a hard mask layer on each of the gate structure and the dummy gate structure at the first region, and on the first isolation structure at the second region;
forming a first patterned photoresist layer on the hard mask layer;
using the first patterned photoresist layer as a mask, etching the hard mask layer to form a third opening, wherein the third opening exposes the portion of the first isolation structure at the second region; and
along the third opening, etching the first isolation structure at the second region till exposing the surface of the substrate to form the first trench.
9. The method according to claim 8 , wherein:
the hard mask layer includes a first hard mask layer, on each of the gate structure, the dummy gate structure and the first isolation structure, and includes a second hard mask layer on the first hard mask layer.
10. The method according to claim 9 , wherein:
after filling the first opening with the conductive material layer, the second hard mask layer is removed.
11. The method according to claim 10 , wherein removing the dummy gate structure and the portion of the conductive material layer includes:
forming a second patterned photoresist layer on the first hard mask layer;
using the second patterned photoresist layer as a mask, etching the first hard mask layer to form a fourth opening, wherein the fourth opening exposes the dummy gate structure at the first region;
along the fourth opening, removing the dummy gate structure; and
along the third opening, removing the portion of the conductive material layer in the first opening.
12. The method according to claim 9 , wherein:
the first hard mask layer is a hybrid layer including silicon oxide and silicon nitride; and
the second hard mask layer is a hybrid layer including titanium oxide and titanium nitride.