Bulk-acoustic wave resonator
A bulk-acoustic wave resonator is provided. The bulk-acoustic wave resonator comprises a substrate comprising an external connection electrode; a connection layer connected to the external connection electrode and disposed on the substrate; a first electrode disposed to cover at least a portion of the connection layer; a piezoelectric layer disposed to cover at least a portion of the first electrode; and a second electrode disposed to cover at least a portion of the piezoelectric layer. The connection layer may be disposed to surround a cavity and may be connected to the first electrode and the second electrode.
1. A bulk-acoustic wave resonator comprising:
a connection layer disposed on a substrate;
a first electrode disposed to cover at least a portion of the connection layer;
a piezoelectric layer disposed to cover at least a portion of the first electrode; and
a second electrode disposed to cover at least a portion of the piezoelectric layer,
wherein the connection layer is disposed to surround a cavity, and is disposed to be connected to at least one of the first electrode and the second electrode, and
wherein the connection layer comprises a first metal layer containing at least one of aluminum (Al), copper (Cu), and tungsten (W).
2. The bulk-acoustic wave resonator of claim 1 , further comprising a substrate comprising an external connection electrode,
wherein the connection layer is connected to the external connection electrode.
3. The bulk-acoustic wave resonator of claim 1 , wherein the connection layer further comprises a barrier layer disposed at least below the first metal layer.
4. The bulk-acoustic wave resonator of claim 3 , wherein the barrier layer is formed of at least one of manganese oxide (MnO), zirconium oxide (ZrO 2 ), aluminum nitride (AlN), lead zirconate titanate (PZT), gallium arsenide (GaAs), hafnium oxide (HfO 2 ), aluminum oxide (Al 2 O 3 ), titanium oxide (TiO 2 ), zinc oxide (ZnO), aluminum (Al), nickel (Ni), chromium (Cr), platinum (Pt), gallium (Ga), hafnium (Hf), silicon dioxide (SiO 2 ), silicon nitride (Si 3 N 4 ), titanium (Ti), titanium nitride (TiN), tantalum (Ta), and tantalum nitride (TaN).
5. The bulk-acoustic wave resonator of claim 1 , further comprising a sacrificial layer disposed to be extended from the connection layer.
6. The bulk-acoustic wave resonator of claim 1 , further comprising metal pads connected to the connection layer.
7. The bulk-acoustic wave resonator of claim 1 , further comprising a seed layer disposed on at least a top surface of the connection layer.
8. The bulk-acoustic wave resonator of claim 7 , wherein the seed layer is formed of a material containing at least one of titanium (Ti), titanium nitride (TiN), tantalum (Ta), and tantalum nitride (TaN).
9. The bulk-acoustic wave resonator of claim 1 , further comprising an insertion layer disposed between the first electrode and the piezoelectric layer.
10. A bulk-acoustic wave resonator comprising:
a substrate;
an etching preventing layer disposed on the substrate and disposed to surround a cavity;
a sacrificial layer disposed to surround the etching preventing layer;
a connection layer disposed in the sacrificial layer;
a first electrode which has a portion connected to the connection layer;
a piezoelectric layer which has at least a portion disposed to cover the first electrode; and
a second electrode disposed to cover at least a portion of the piezoelectric layer,
wherein the connection layer is connected to the first electrode and the second electrode.
11. The bulk-acoustic wave resonator of claim 10 , further comprising an external connection electrode connected to the connection layer, and disposed to penetrate through the substrate and the sacrificial layer.
12. The bulk-acoustic wave resonator of claim 10 , wherein the connection layer comprises a first metal layer containing at least one of aluminum (Al), copper (Cu), and tungsten (W).
13. The bulk-acoustic wave resonator of claim 12 , wherein the connection layer further comprises a barrier layer disposed below at least the first metal layer.
14. The bulk-acoustic wave resonator of claim 13 , wherein the barrier layer is formed of at least one of manganese oxide (MnO), zirconium oxide (ZrO 2 ), aluminum nitride (AlN), lead zirconate titanate (PZT), gallium arsenide (GaAs), hafnium oxide (HfO 2 ), aluminum oxide (Al 2 O 3 ), titanium oxide (TiO 2 ), zinc oxide (ZnO), aluminum (Al), nickel (Ni), chromium (Cr), platinum (Pt), gallium (Ga), hafnium (Hf), silicon dioxide (SiO 2 ), silicon nitride (Si 3 N 4 ), titanium (Ti), titanium nitride (TiN), tantalum (Ta), and tantalum nitride (TaN).
15. The bulk-acoustic wave resonator of claim 10 , further comprising a seed layer disposed at least on a top surface of the connection layer.
16. The bulk-acoustic wave resonator of claim 15 , wherein the seed layer is formed of a material containing at least one of titanium (Ti), titanium nitride (TiN), tantalum (Ta), and tantalum nitride (TaN).
17. The bulk-acoustic wave resonator of claim 10 , wherein the connection layer has a thickness corresponding to a thickness of the sacrificial layer.
18. A bulk-acoustic wave resonator comprising:
a substrate;
a sacrificial layer;
a connection layer disposed on the substrate;
a first electrode disposed on an upper surface of the connection layer; and
connection electrodes disposed on a lower surface of the connection layer,
wherein the connection layer is disposed within the sacrificial layer, and
wherein the connection electrodes are disposed to penetrate the substrate.
19. The bulk-acoustic wave resonator of claim 18 , wherein the connection layer comprises a first metal layer, and a barrier layer disposed below the first metal layer.