Component with improved heat dissipation
In a component with component structures generating dissipation heat, it is proposed to apply on an active side of the substrate a heat-conducting means to the back side of the component substrate, which has a second thermal conductivity coefficient α LS , which is substantially higher than the first thermal conductivity coefficient α S of the substrate. The heat dissipation then succeeds via the heat-conducting means and via connecting means which connect the substrate to a carrier.
1. A component, comprising:
a substrate having a first thermal conductivity coefficient α S ;
component structures on an active side of the substrate, the component structures configured to generate dissipation heat;
a carrier;
metallic connecting means, with which the active side of the substrate is mounted on the carrier; and
heat-conducting means applied to a back side of the substrate located opposite to the active side, wherein the heat-conducting means comprises a material having a second thermal conductivity coefficient α LS , and α LS >>α S ;
wherein vertical heat transport through the substrate in structured areas of the substrate from the component structures to the heat-conducting means and/or the heat-conducting means to the metallic connecting means is facilitated,
wherein a layer thickness of the substrate is reduced in the structured areas.
2. The component according to claim 1 ,
wherein the heat-conducting means on the back side connects at least one or a plurality of areas above the component structures to the areas above the metallic connecting means.
3. The component of claim 1 , wherein the metallic connecting means are connected to a heat sink in the carrier.
4. The component of claim 1 , wherein the substrate comprises a piezoelectric material, in which the component is a component working with acoustic waves.
5. The component of claim 4 ,
wherein the heat-conducting means comprise an electrically conductive layer applied on the back side, which is structured in two separate areas, which are arranged above different component structures, so that a capacitive coupling of the different component structures through the layer of the heat conducting means is avoided.
6. The component of claim 1 , wherein the heat-conducting means comprises a layer applied across the entire surface area on the back side.
7. The component of claim 6 , wherein the layer applied as a heat-conducting means on the back side extends down to at least one side surface of the substrate towards the carrier and is connected there to a heat sink.
8. The component of claim 3 , wherein the metallic connecting means are formed as bumps or solder pads, which connect contact surfaces on the substrate with corresponding connection points on the upper side of the carrier.
9. The component of claim 7 , wherein the heat-conducting means comprises a material selected from Al, Ag, Cu, Au, AlN and SiC.