Contact passivation for perovskite optoelectronics
Disclosed herein are perovskite based optoelectronic devices made entirely via solution-processing at low temperatures (<150° C.) which provide for simple manufacturing, compatibility with flexible substrates, and perovskite-based tandem devices. These perovskite based optoelectronic devices are produced using an electron transport layer on which the perovskite layer is formed which is passivated using a ligand selected to reduce electron-hole recombination at the interface between the electron transport layer and the perovskite layer.
1. A perovskite-based optoelectronic device, comprising:
a) an optically transparent electrode;
b) a semiconductor electron transport layer on said optically transparent electrode;
c) a light-absorbing perovskite layer formed on said semiconductor electron transport layer;
d) the electron transport layer having a surface located at an interface or junction between the semiconductor electron transport layer and the light-absorbing perovskite layer at least partially capped with a ligand Z, wherein said ligand Z is selected to passivate surface states at said interface or junction between the semiconductor electron transport layer and the light-absorbing perovskite layer; and
e) a hole transport layer on said light-absorbing perovskite layer, and including an electrode layer located on said hole transport layer.
2. The perovskite-based optoelectronic device according to claim 1 , wherein the ligand Z is any one of a halide, a pseudo halide, a monovalent ammonium cation, and any combination thereof.
3. The perovskite-based optoelectronic device according to claim 2 , wherein the halide is any one of Cl, Br, I, F, and any combination thereof.
4. The perovskite-based optoelectronic device according to claim 2 , wherein the pseudo halide is a polyatomic analogue of halide ions.
5. The perovskite-based optoelectronic device according to claim 4 wherein the pseudo halide is any one of cyanide (CN), thiocyanate (SCN), cyanate (OCN), and any combination thereof.
6. The perovskite-based optoelectronic device according to claim 2 , wherein the monovalent ammonium cation is any one of positively charged polyatomic ions with the chemical formula of R1R2R3R4N+; where R1, R2, R3, R4 are selected from a group consisting of hydrogen, and compounds derived from linear alkanes, branched alkanes, cycloalkanes, (poly)cycloalkanes, cis- and trans-linear alkenes, cis- and transbranched alkenes, linear alkynes, branched alkynes, (poly)alkynes, aromatic hydrocarbons, (poly)aromatic hydrocarbons, heteroarenes, (poly)heteroarenes, thiophenes, (poly)thiophenes, (poly)anilines, and combination of above mentioned elements.
7. The perovskite-based optoelectronic device according to claim 1 , wherein the semiconductor electron transport layer is any one of doped or undoped TiO 2 , SnO 2 , Al 2 O 3 , Ga 2 O 3 , ZnO, Zn 2 SnO 4 , BaSnO 3 , BaTiO 3 , Nb 2 O 5 , Ta 2 O 5 and ZrO 2 .
8. The perovskite-based optoelectronic device according to claim 7 , wherein said the semiconductor electron transport layer is planar or mesoporous.
9. The perovskite-based optoelectronic device according to claim 7 , wherein said semiconductor electron transport layer comprises a single layer or multilayers.
10. The perovskite-based optoelectronic device according to claim 1 , wherein said optically transparent electrode is any one of indium doped tin oxide (ITO, In2O3:SnO2), fluorine doped tin oxide (FTO, SnO 2 :F), aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), boron-doped zinc oxide (BZO), indium-doped zinc oxide (IZO).
11. The perovskite-based optoelectronic device according to claim 1 , wherein said optically transparent electrode is a film comprised of any one of silver nanowires, silver nanoparticles, carbon black, carbon nanotube, carbon nanowire, graphene, reduced graphene oxide and ultrathin graphite.
12. The perovskite-based optoelectronic device according to claim 1 , wherein said hole transport layer is any one of an organic hole transport material and an inorganic hole transport material.
13. The perovskite-based optoelectronic device according to claim 12 wherein said inorganic hole transport material is any one of doped or undoped NiOx, WOx, MoOx, CuSCN, V 2 O 5 , MoS 2 , CuGaO 2 , PbS and any combination thereof.
14. The perovskite-based optoelectronic device according to claim 12 wherein said organic hole transport material is any one of doped or undoped Spiro-OMeTAD (N2,N2,N2′,N2′,N7,N7,N7′,N7′-octakis(4-methoxyphenyl)-9,9′-spirobi[9Hfluorene]-2,2′,7,7′-tetramine), PTAA (Poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], P3HT (Poly(3-hexylthiophene-2,5-diyl)), Poly-TPD (Poly(N,N′-bis-4-butylphenyl-N,N′-bisphenyl)benzidine) and PEDOT:PSS (poly(3,4-ethylenedioxythiophene) polystyrene sulfonate).
15. The perovskite-based optoelectronic device according to claim 1 , wherein the perovskite has a general formula of ABX3, where
A is a monovalent cation or ion combination, wherein the monovalent cation is K+, Rb+, Cs+, or any of organic monovalent cations with the general formula of R1R2R3R4N+; where R is selected from a group consisting of hydrogen, and compounds derived from linear alkanes, branched alkanes, cycloalkanes, (poly)cycloalkanes, cis and trans-linear alkenes, cis- and trans-branched alkenes, linear alkynes, branched alkynes, (poly)alkynes, aromatic hydrocarbons, (poly)aromatic hydrocarbons, heteroarenes, (poly)heteroarenes, thiophenes, (poly)thiophenes, (poly)anilines;
B is a divalent metal ion or ion combination, wherein the divalent cation is any of Pb 2+ , Sn 2+ , Cu 2+ , Ge 2+ , Zn 2+ , Ni 2+ , Fe 2+ , Mn 2+ , Eu 2+ , and Co 2+ ; and any combination thereof; and
X is any one of a halide, a pseudo halide, and any combination thereof.
16. The perovskite-based optoelectronic device according to claim 15 wherein the halide is any one or combination of Cl−, Br−, I− and F.
17. The perovskite-based optoelectronic device according to claim 15 wherein the pseudo halide is any one or combination of cyanide (CN), thiocyanate (SCN) and cyanate (OCN).
18. The perovskite-based optoelectronic device according to claim 1 , wherein said semiconductor electron transport layer having the surface located at the interface or junction between the electron transport layer and the light-absorbing perovskite layer is fully capped by said ligand Z.
19. The perovskite-based optoelectronic device according to claim 1 , wherein said semiconductor electron transport layer is formed from TiO2 nanocrystals, wherein said ligand is Cl−, and wherein said perovskite is MA0.15FA0.85PbI2.55Br0.45, wherein MA is methylammonium cation and FA is formamidinium cation.
20. The perovskite-based optoelectronic device according to claim 1 , wherein said electron transport layer has a thickness in a range from about 5 nm to about 300 nm, and wherein said hole transport layer has a thickness in a range from about 10 nm to about 300 nm, and wherein said light absorbing perovskite layer a thickness in a range from about 20 nm to about 2000 nm.