Semiconductor apparatus for detecting or oscillating electromagnetic waves
A semiconductor apparatus comprising: an element substrate including a plurality of semiconductor devices which detect or oscillate terahertz waves; and an electromagnetic shielding in a mesh form disposed in front of a surface detecting or oscillating the terahertz waves in the element substrate and formed of a conductive material, wherein a line width of the electromagnetic shielding is not more than a wavelength of the terahertz waves.
1. A semiconductor apparatus comprising:
an element substrate including a plurality of semiconductor devices which detect or oscillate terahertz waves; and
an electromagnetic shielding in a mesh form disposed in front of a surface detecting or oscillating the terahertz waves in the element substrate and formed of a conductive material, wherein
a line width of the electromagnetic shielding is not more than a wavelength of the terahertz waves, and
a width of each opening portion of the electromagnetic shielding is at least the wavelength of the terahertz waves.
2. The semiconductor apparatus according to claim 1 , wherein the width of each opening portion of the electromagnetic shielding is not more than ½ of a wavelength of millimeter waves.
3. The semiconductor apparatus according to claim 1 , wherein the thickness of the electromagnetic shielding is not more than the wavelength of the terahertz waves.
4. The semiconductor apparatus according to claim 1 , further comprising a circuit board including a circuit which reads signals output from the plurality of semiconductor devices or drives the plurality of semiconductor devices, wherein
the plurality of semiconductor devices are two-dimensionally arranged on the element substrate, and the circuit board and the element substrate are integrally disposed.
5. The semiconductor apparatus according to claim 1 , wherein a lens which controls an optical path of the terahertz waves is disposed in front of the surface detecting or oscillating the terahertz waves in the element substrate.
6. A semiconductor apparatus comprising:
an element substrate including a plurality of semiconductor devices which detect or oscillate predetermined electromagnetic waves; and
an electromagnetic shielding in a mesh form disposed in front of a surface detecting or oscillating the predetermined electromagnetic waves in the element substrate and formed of a conductive material, wherein
a wavelength of the predetermined electromagnetic waves is in a range of 0.1 mm to 1 mm,
a line width of the electromagnetic shielding is not more than 1 mm, and
a width of each opening portion of the electromagnetic shielding is at least the wavelength of the predetermined electromagnetic waves.
7. The semiconductor apparatus according to claim 6 , wherein the width of each opening portion of the electromagnetic shielding is not more than 25 mm.
8. The semiconductor apparatus according to claim 7 , wherein the width of each opening portion of the electromagnetic shielding is not more than 1.5 mm.
9. The semiconductor apparatus according to claim 6 , wherein the thickness of the electromagnetic shielding is not more than 1 mm.
10. An imaging system comprising:
the semiconductor apparatus according to claim 1 ; and
a signal processor which processes signals output from the semiconductor apparatus.
11. A moving object comprising:
the semiconductor apparatus according to claim 1 ;
a moving device;
a processing device which acquires information from signals output from the semiconductor apparatus; and
a control device which controls the moving device on the basis of the information.