Semiconductor structure
A semiconductor structure includes a substrate, a MIM capacitor disposed over the substrate, a first insulating layer disposed over the MIM capacitor, an ONON stack disposed over the first insulating layer, a connecting via disposed in the first insulating layer, and a connecting pad disposed in the ONON stack and in contact with the connecting via. The ONON stack covers sidewalls of the connecting pad and a portion of a top surface of the connecting pad. The ONON stack includes a first silicon oxide layer, a first silicon nitride layer, a second silicon oxide layer and a second silicon nitride layer upwardly disposed over the first insulating layer. A thickness of the second silicon nitride layer is greater than a thickness of the second silicon oxide layer and greater than a thickness of the first silicon nitride layer.
1. A semiconductor structure comprising:
a substrate;
a MIM capacitor disposed over the substrate;
a first insulating layer disposed over the MIM capacitor;
an oxide-nitride-oxide-nitride (ONON) stack disposed over the first insulating layer;
a connecting via disposed in the first insulating layer; and
a connecting pad disposed in the ONON stack and in contact with the connecting via,
wherein the ONON stack covers sidewalls of the connecting pad and a portion of a top surface of the connecting pad, the ONON stack comprises a first silicon oxide layer, a first silicon nitride layer, a second silicon oxide layer and a second silicon nitride layer upwardly disposed over the first insulating layer, and a thickness of the second silicon nitride layer is greater than a thickness of the second silicon oxide layer and greater than a thickness of the first silicon nitride layer.
2. The semiconductor structure of claim 1 , wherein the first silicon oxide layer is in contact with the first insulating layer and the portion of the top surface of the connecting pad.
3. The semiconductor structure of claim 2 , wherein a thickness of the first silicon oxide layer over the first insulating layer and a thickness of the first silicon oxide layer over the portion of the top surface of the connecting pad are the same.
4. The semiconductor structure of claim 1 , further comprising:
a second insulating layer; and
a connecting layer disposed in the second insulating layer,
wherein the first insulating layer and the MIM capacitor are disposed over the second insulating layer and the second connecting layer.
5. The semiconductor structure of claim 4 , wherein the connecting via penetrates a portion of the first insulating layer and a portion of the second insulating layer, and the connecting via is electrically connected to the connecting layer.
6. The semiconductor structure of claim 4 , wherein the MIM capacitor is electrically connected to the connecting layer by the connecting via.
7. The semiconductor structure of claim 1 , further comprising:
a polymer layer disposed over the ONON stack; and
an external conductor over the polymer layer and electrically connected to the connecting pad,
wherein the polymer layer covers another portion of the top surface of the connecting pad.
8. The semiconductor structure of claim 7 , wherein the external conductor penetrates the ONON stack.
9. A semiconductor structure comprising:
a first insulating layer;
a connecting layer disposed in the first insulating layer;
a MIM capacitor disposed over the first insulating layer and the connecting layer;
a second insulating layer disposed over the MIM capacitor, the first insulating layer and the connecting layer;
an oxide-nitride-oxide-nitride (ONON) stack disposed over the second insulating layer;
a connecting via disposed in the second insulating layer; and
a connecting pad disposed in the ONON stack and in contact with the connecting via,
wherein the ONON stack covers sidewalls of the connecting pad and a portion of a top surface of the connecting pad, and the MIM capacitor is electrically connected to the connecting layer by the connecting via.
10. The semiconductor structure of claim 9 , wherein the ONON stack comprises a first silicon oxide layer, a first silicon nitride layer, a second silicon oxide layer and a second silicon nitride layer upwardly disposed over the second insulating layer.
11. The semiconductor structure of claim 10 , wherein the first silicon oxide layer is in contact with the second insulating layer and the portion of the top surface of the connecting pad.
12. The semiconductor structure of claim 11 , wherein a thickness of the first silicon oxide layer over the second insulating layer and a thickness of the first silicon oxide layer over the portion of the top surface of the connecting pad are the same.
13. The semiconductor structure of claim 10 , wherein a thickness of the second silicon nitride layer is greater than a thickness of the second silicon oxide layer and greater than a thickness of the first silicon nitride layer.
14. The semiconductor structure of claim 9 , wherein the connecting via penetrates a portion of the first insulating layer and a portion of the second insulating layer, and the connecting via is electrically connected to the connecting layer.
15. The semiconductor structure of claim 9 , further comprising:
a polymer layer disposed over the ONON stack; and
an external conductor over the polymer layer and electrically connected to the connecting pad,
wherein the polymer layer covers another portion of the top surface of the connecting pad, and the external conductor penetrates the ONON stack.
16. A semiconductor structure comprising:
a substrate;
a MIM capacitor disposed over the substrate;
an insulating layer disposed over the MIM capacitor;
an ONON stack disposed over the insulating layer;
a connecting via disposed in the insulating layer;
a connecting pad disposed in the ONON stack and in contact with the connecting via;
a polymer layer disposed over the ONON stack and exposing a portion of the connecting pad;
an external conductor disposed over the connecting pad; and
an under bump metallization disposed on the polymer layer and the portion of the connecting pad exposed through the polymer layer.
17. The semiconductor structure of claim 16 , wherein the ONON stack comprises a first silicon oxide layer, a first silicon nitride layer, a second silicon oxide layer and a second silicon nitride layer upwardly disposed over the insulating layer.
18. The semiconductor structure of claim 17 , wherein the first silicon oxide layer is in contact with the insulating layer and a portion of a top surface of the connecting pad, and a thickness of the first silicon oxide layer over the insulating layer and a thickness of the first silicon oxide layer over the portion of the top surface of the connecting pad are the same.
19. The semiconductor structure of claim 16 , wherein the ONON stack covers sidewalls and a portion of a top surface of the connecting pad and the polymer layer covers another portion of the top surface of the connecting pad.
20. The semiconductor structure of claim 16 , wherein the external connector and the under bump metallization penetrate the ONON stack.