Ultra-thin film superconducting tapes
An ultra-thin film superconducting tape and method for fabricating same is disclosed. Embodiments are directed to a superconducting tape being fabricated by processes which include removing a portion of the superconducting tape's substrate subsequent the substrate's initial formation, whereby a thickness of the superconducting tape is reduced to 15-80 μm.
1. A superconductor tape comprising:
a substrate;
a buffer layer overlying the substrate;
a superconductor layer overlying the buffer layer; and
an overlayer overlying the superconductor layer;
wherein the superconductor tape has a thickness in a range of 15—23 μm and an engineering current density of above 800 A/mm 2 at 77 K, 0 T.
2. The superconductor tape of claim 1 , wherein the buffer layer has a thickness in a range of 0.1 to 2 μm, the superconductor layer has a thickness in a range of 0.5 to 5 μm, and the overlayer has a thickness in a range of 0.2 to 4 μm.
3. The superconductor tape of claim 1 , wherein the overlayer comprises silver (Ag) or gold (Au).
4. The superconductor tape of claim 1 , wherein the superconductor layer comprises a material selected from the group consisting of REBa 2 Cu 3 O 7-x , where RE is one of more elements selected from the group consisting of Y, Gd, Sm, Nd, Eu, Dy, Ho, Yb, Er, Tm, and Lu, and wherein 0≤x≤1.
5. The superconductor tape of claim 1 , wherein the buffer layer comprises a material selected from the group consisting of MgO, LaMnO 3 , CeO 2 , Gd 2 Zr 2 O 7 , YSZ, SrTiO 3 , and combinations thereof.
6. The superconductor tape of claim 1 , wherein the substrate comprises a metal selected from the group consisting of Hastelloy, Stainless Steel, Ni-W, Inconel, metallic glasses, and combinations thereof.
7. The superconductor tape of claim 1 , further comprising a conductive layer overlying the overlayer.
8. The superconductor tape of claim 7 , wherein the conductive layer comprises copper (Cu) or at least one Cu alloy or a conductive metal alloy.
9. The superconductor tape of claim 7 , further comprising a second overlayer and a second conductive layer, wherein the substrate is positioned between the buffer layer and the second overlayer, and the second overlayer is positioned between the substrate and the second conductive layer.
10. A superconductor tape comprising:
a substrate;
a buffer layer overlying the substrate;
a superconductor layer overlying the buffer layer; and
an overlayer overlying the superconductor layer;
wherein the substrate has a thickness in a range of 10—22 μm and the superconductor tape has an engineering current density of above 800 A/mm 2 at 77 K, 0 T.
11. The superconductor tape of claim 10 , wherein the buffer layer has a thickness in a range of 0.1 to 2 μm, the superconductor layer has a thickness in a range of 0.5 to 5 μm, and the overlayer has a thickness in a range of 0.2 to 4 μm.
12. The superconductor tape of claim 10 , wherein the overlayer comprises silver (Ag) or gold (Au).
13. The superconductor tape of claim 10 , wherein the superconductor layer comprises a material selected from the group consisting of REBa 2 Cu 3 O 7-x , where RE is one of more elements selected from the group consisting of Y, Gd, Sm, Nd, Eu, Dy, Ho, Yb, Er, Tm, and Lu, and wherein 0≤x≤1.
14. The superconductor tape of claim 10 , wherein the buffer layer comprises a material selected from the group consisting of MgO, LaMnO 3 , CeO 2 , Gd 2 Zr 2 O 7 , YSZ, SrTiO 3 , and combinations thereof.
15. The superconductor tape of claim 10 , wherein the substrate comprises a metal selected from the group consisting of Hastelloy, Stainless Steel, Ni-W, Inconel, metallic glasses, and combinations thereof.
16. The superconductor tape of claim 10 , further comprising a conductive layer overlying the overlayer.
17. The superconductor tape of claim 16 , wherein the conductive layer comprises copper (Cu) or at least one Cu alloy or a conductive metal alloy.
18. The superconductor tape of claim 16 , further comprising a second overlayer and a second conductive layer, wherein the substrate is positioned between the buffer layer and the second overlayer, and the second overlayer is positioned between the substrate and the second conductive layer.