High-power terahertz oscillator
A small-size high-power terahertz oscillator achieves a stable oscillation in a terahertz frequency band even at room temperature. The high-power terahertz oscillator has a structure in which a bow-tie antenna is disposed on a substrate, a cavity resonator, which includes two cavities, is disposed at a power supply portion of the bow-tie antenna, and a resonant tunneling diode (RTD) is disposed along a bottom of a wall of the cavity resonator, which defines the two cavities, and stably oscillates waves in the terahertz frequency band at room temperature by using the RTD, the bow-tie antenna and the cavity resonator.
1. A high-power terahertz oscillator, comprising:
a bow-tie antenna, which includes first and second conductor strips, disposed on a substrate;
a cavity resonator, which includes two cavities, disposed at an oscillating portion of said bow-tie antenna;
a resonant tunneling diode, which is cuboid, disposed along a bottom of a wall which defines the two cavities; and
an insulating thin film disposed between said first and second conductor strips of said bow-tie antenna, and disposed between a bottom of said cavity resonator and said second conductor strip of said bow-tie antenna,
wherein said first conductor strip of said bow-tie antenna is integrated with said cavity resonator, and
wherein an oscillation in a terahertz frequency band is obtained from said resonant tunneling diode, said bow-tie antenna and said cavity resonator, by applying a bias voltage between said second conductor strip of said bow-tie antenna and a side surface or a top surface of said cavity resonator connected to said first conductor strip of said bow-tie antenna.
2. The high-power terahertz oscillator according to claim 1 , wherein a bottom surface of said resonant tunneling diode is in contact with a top surface of said second conductor strip of said bow-tie antenna.
3. The high-power terahertz oscillator according to claim 1 , wherein said first and second conductor strips of said bow-tie antenna and said cavity resonator are made of a good conductor, and said substrate is made of a semi-insulator.
4. The high-power terahertz oscillator according to claim 2 , wherein said first and second conductor strips of said bow-tie antenna and said cavity resonator are made of a good conductor, and said substrate is made of a semi-insulator.
5. The high-power terahertz oscillator according to claim 1 , wherein a recess is formed at said second conductor strip of said bow-tie antenna, a conductor bridge extending from said cavity resonator is connected to an upper surface of said substrate in the recess, and a stabilizing resistor is connected between said conductor bridge and a side surface of said second conductor strip of said bow-tie antenna.
6. The high-power terahertz oscillator according to claim 2 , wherein a recess is formed at said second conductor strip of said bow-tie antenna, a conductor bridge extending from said cavity resonator is connected to an upper surface of said substrate in the recess, and a stabilizing resistor is connected between said conductor bridge and a side surface of said second conductor strip of said bow-tie antenna.
7. The high-power terahertz oscillator according to claim 3 , wherein a recess is formed at said second conductor strip of said bow-tie antenna, a conductor bridge extending from said cavity resonator is connected to an upper surface of said substrate in the recess, and a stabilizing resistor is connected between said conductor bridge and a side surface of said second conductor strip of said bow-tie antenna.
8. The high-power terahertz oscillator according to claim 4 , wherein a recess is formed at said second conductor strip of said bow-tie antenna, a conductor bridge extending from said cavity resonator is connected to an upper surface of said substrate in the recess, and a stabilizing resistor is connected between said conductor bridge and a side surface of said second conductor strip of said bow-tie antenna.