Charged particle beam device and analysis method
A charged particle beam device includes: a charged particle beam source; an analyzer that analyzes and detects particles including secondary electrons and backscattered charged particles that are emitted from a specimen by irradiating the specimen with a primary charged particle beam emitted from the charged particle beam source; a bias voltage applying unit that applies a bias voltage to the specimen; and an analysis unit that extracts a signal component of the secondary electrons based on a first spectrum obtained by detecting the particles with the analyzer in a state where a first bias voltage is applied to the specimen, and a second spectrum obtained by detecting the particles with the analyzer in a state where a second bias voltage different from the first bias voltage is applied to the specimen.
1. A charged particle beam device comprising:
a charged particle beam source;
an analyzer that analyzes and detects particles including secondary electrons and backscattered charged particles that are emitted from a specimen by irradiating the specimen with a primary charged particle beam emitted from the charged particle beam source;
a bias voltage applying unit that applies a bias voltage to the specimen; and
an analysis unit that extracts a signal component of the secondary electrons based on a first spectrum obtained by detecting the particles with the analyzer in a state where a first bias voltage is applied to the specimen, and a second spectrum obtained by detecting the particles with the analyzer in a state where a second bias voltage different from the first bias voltage is applied to the specimen,
wherein the analysis unit obtains a difference between an intensity of the first spectrum and an intensity of the second spectrum and extracts a signal component of the secondary electrons based on the difference.
2. The charged particle beam device according to claim 1 , further comprising a deflector that scans the specimen with the primary charged particle beam, wherein the analysis unit performs:
processing for extracting a signal component of the secondary electrons based on the first and second spectrums, for each irradiation position on the specimen; and
processing for generating an image representing an intensity distribution of the secondary electrons based on intensity of the secondary electrons, for each irradiation position.
3. The charged particle beam device according to claim 1 , further comprising an energy applying unit that varies kinetic energy of the primary charged particle beam emitted from the charged particle beam source, wherein
the analysis unit extracts a signal component of the backscattered charged particles based on a third spectrum obtained by detecting the particles with the analyzer in a state where the kinetic energy of the primary charged particle beam has been varied into first kinetic energy, and a fourth spectrum obtained by detecting the particles with the analyzer in a state where the kinetic energy of the primary charged particle beam has been varied into second kinetic energy different from the first kinetic energy.
4. An analysis method for use in a charged particle beam device including a charged particle beam source and an analyzer that analyzes and detects particles including secondary electrons and backscattered charged particles that are emitted from a specimen by irradiating the specimen with a primary charged particle beam emitted from the charged particle beam source, the analysis method comprising:
obtaining a first spectrum obtained by detecting the particles with the analyzer in a state where a first bias voltage is applied to the specimen;
obtaining a second spectrum obtained by detecting the particles with the analyzer in a state where a second bias voltage different from the first bias voltage is applied to the specimen;
extracting a signal component of the secondary electrons based on the first spectrum and the second spectrum;
obtaining a difference between an intensity of the first spectrum and an intensity of the second spectrum and extracting a signal component of the secondary electrons based on the difference.