Semiconductor package structure and fabrication method thereof

1. A semiconductor package structure, comprising:

a re-distribution substrate;

a die mounted on the re-distribution substrate, the die including a joining pattern;

a solder bump joined to the joining pattern on the die;

a polymer resin layer embedding the die on the re-distribution substrate, the solder bump being exposed to an upper surface of the polymer resin layer;

a base substrate on the polymer resin layer;

a contact plug connecting the re-distribution substrate and the base substrate on a side of the die; and

an upper package mounted on the base substrate and including an upper substrate and an upper die mounted on the upper substrate,

wherein the base substrate includes a heat dissipation plug penetrating the base substrate, and

wherein the solder bump connects the heat dissipation plug and the joining pattern to each other.

2. The semiconductor package structure of claim 1 , wherein the base substrate includes a solder mask disposed on the base substrate, the solder mask defining an opening area that corresponds to the heat dissipation plug, and

wherein the solder bump disposed in the opening area between the heat dissipation plug and the die, and configured to discharge heat generated in the die to an outside.

3. The semiconductor package structure of claim 2 , wherein the solder bump is coupled to the base substrate through the opening area.

4. The semiconductor package structure of claim 1 , wherein a direction of heat, which is generated in the die and is discharged to the outside through the solder bump, and a direction of a signal, which is produced by a semiconductor device in the die and is transmitted to an external device, are anti-parallel to each other.

5. The semiconductor package structure of claim 1 , wherein the solder bump comprises a first portion facing the die and a second portion facing the heat dissipation plug, and

wherein a width of the first portion is different than a width of the second portion.

6. The semiconductor package structure of claim 3 , wherein the heat dissipation plug is provided in plural, and

wherein the solder bump is connected to two of the plurality of the heat dissipation plugs.

7. The semiconductor package structure of claim 1 , wherein the joining pattern provides an interface between the die and the solder bump, and

wherein the joining pattern is electrically disconnected from the die.

8. The semiconductor package structure of claim 1 , wherein the base substrate has a plate shape, and

wherein the polymer resin layer surrounds the contact plug.

9. The semiconductor package structure of claim 1 , further comprising a solder ball disposed on a bottom surface of the base substrate, opposite to the die, and configured to transmit a signal, which is produced by a semiconductor device of the die, to an external device.

10. A semiconductor package structure, comprising:

a base substrate including heat dissipation plugs penetrating the base substrate;

a solder mask disposed on the base substrate, the solder mask defining an opening area that corresponds to at least two of the heat dissipation plugs;

a die disposed on the base substrate, the heat dissipation plugs being configured to discharge heat generated in the die to an outside;

a solder bump that is interposed between the die and the opening area, the solder bump being coupled to the base substrate through the opening area;

a re-distribution layer disposed on the die, the die being mounted at the re-distribution layer;

a contact plug connecting the re-distribution layer and the base substrate on a side of the die; and

a solder ball disposed on the re-distribution layer and configured to transmit a signal, which is produced by a semiconductor device of the die, to an external device,

wherein the solder bump is connected to two of the plurality of the heat dissipation plugs.

11. The semiconductor package structure of claim 10 , a joining pattern that is interposed between the die and the solder bump,

wherein the solder bump connects one of the heat dissipation plugs and the joining pattern to each other.

12. The semiconductor package structure of claim 11 , wherein the joining pattern is electrically disconnected from the die.

13. The semiconductor package structure of claim 10 , wherein a direction of the heat, which is generated in the die and is discharged to the outside through the solder bump, and a direction of the signal, which is produced by the semiconductor device in the die and is transmitted to the external device through the solder ball, are anti-parallel to each other.

14. The semiconductor package structure of claim 10 , wherein the solder bump comprises a first portion facing the die and a second portion facing the heat dissipation plugs, and

wherein a width of the first portion is different than a width of the second portion.

15. The semiconductor package structure of claim 10 , further comprising a polymer resin layer embedding the die on the re-distribution layer, the solder bump being exposed to an upper surface of the polymer resin layer,

wherein the base substrate has a plate shape, and

wherein the polymer resin layer surrounds the contact plug.

16. The semiconductor package structure of claim 10 , further comprising a polymer resin layer embedding the die on the re-distribution layer, the solder bump being exposed to an upper surface of the polymer resin layer,

wherein the polymer resin layer and the die is disposed in a cavity of the base substrate, and

wherein the contact plug disposed in the base substrate.

17. A semiconductor package structure, comprising:

a base substrate;

a die disposed in a cavity of the base substrate;

a polymer resin layer filling in the cavity;

a re-distribution layer disposed on the base substrate, the die being mounted at the re-distribution layer;

a solder bump between a bottom surface of the cavity and the die, the solder bump being joined to the die by a joining pattern;

a solder mask disposed on the bottom surface of the cavity, the solder mask defining an opening area that corresponds to the solder bump, and

a solder ball disposed on the re-distribution layer and configured to transmit a signal, which is produced by a semiconductor device of the die, to an external device,

wherein the solder bump comprises:

a heat dissipation plug penetrating the base substrate under the cavity; and

a contact plug connecting the re-distribution layer and the base substrate on a side of the cavity, and

wherein the solder bump is coupled to the heat dissipation plug through the opening area.

18. The semiconductor package structure of claim 17 , wherein the joining pattern is electrically disconnected from the die.

19. The semiconductor package structure of claim 17 , wherein the solder bump comprises a first portion facing the die and a second portion facing the heat dissipation plug, and

wherein a width of the first portion is different than a width of the second portion.

20. The semiconductor package structure of claim 17 , wherein a direction of heat, which is generated in the die and is discharged to the outside through the solder bump, and a direction of the signal, which is produced by the semiconductor device in the die and is transmitted to the external device through the solder ball, are anti-parallel to each other.