SRAM structure and method for forming the same
SRAM structures are provided. An SRAM structure includes a substrate, a P-type well region over the substrate, an N-type well region over the substrate, a PMOS transistor in the N-type well region, an NMOS transistor in the P-type well region, an isolation region over the boundary between the P-type well region and the N-type well region, and a dielectric structure formed in the isolation region and extending from the isolation region to the boundary between the P-type well region and the N-type well region. The depth of the dielectric structure is greater than that of the isolation region. The PMOS transistor is separated from the NMOS transistor by the isolation region.
1. A Static Random Access Memory (SRAM) structure, comprising:
a substrate;
a P-type well region over the substrate;
an N-type well region over the substrate abutting the P-type well region at a junction;
a PMOS transistor in the N-type well region;
an NMOS transistor in the P-type well region;
a dielectric layer over the PMOS transistor and the NMOS transistor; and
a dielectric structure over the junction and extending from the junction to a top surface of the dielectric layer,
wherein the PMOS transistor is separated from the NMOS transistor by the dielectric structure,
wherein the dielectric structure includes a negatively charged material.
2. The SRAM structure as claimed in claim 1 ,
wherein the NMOS transistor includes a first fin in the P-type well region and the first fin extends from the P-type well region, through an isolation layer, and into the dielectric layer,
wherein the PMOS transistor includes a second fin in the N-type well region and the second fin extends from the N-type well region, through the isolation layer, and into the dielectric layer,
wherein the dielectric structure extends through the isolation layer.
3. The SRAM structure as claimed in claim 2 ,
wherein the NMOS transistor includes a first gate structure over the first fin,
wherein the PMOS transistor includes a second gate structure over the second fin,
wherein the dielectric structure extends between the first gate structure and the second gate structure.
4. The SRAM structure as claimed in claim 2 , wherein material of the dielectric structure is different from material of the isolation layer.
5. The SRAM structure as claimed in claim 2 , wherein the first fin is aligned with the second fin.
6. The SRAM structure as claimed in claim 2 ,
wherein the dielectric structure has a first portion directly between the first fin and the second fin and a second portion away from the first portion,
wherein the first portion has a first width and the second portion has a second width smaller than the first width.
7. A Static Random Access Memory (SRAM) structure, comprising:
an N-type well region sandwiched between a first P-type well region and a second P-type well region over a substrate, the first P-type well region abutting the N-type well region at a first junction and the second P-type well region abutting the N-type well region at a second junction;
a first pull-down transistor and a first pass-gate transistor over the first P-type well region, the first pull-down transistor including a first gate and the first pass-gate transistor including a second gate;
a first pull-up transistor and a second pull-up transistor over the N-type well region, the first pull-up transistor including a third gate and the second pull-up transistor including a fourth gate;
a second pass-gate transistor and a second pull-down transistor over the second P-type well region, the second pass-gate transistor including a fifth gate and the second pull-down transistor including a sixth gate; and
a dielectric structure over the first junction and extending from the first junction and between the second gate and the fourth gate,
wherein the dielectric structure is formed of doped or plasma-treated oxygen-containing dielectric material to induce positive charges in the first P-type well region and the N-type well region.
8. The SRAM structure as claimed in claim 7 , further comprising an isolation layer between the second gate and the first P-type well region and between the fourth gate and the N-type well region, wherein the dielectric structure extends through the isolation layer.
9. The SRAM structure as claimed in claim 8 , wherein the isolation layer and the dielectric structure are made of different materials.
10. The SRAM structure as claimed in claim 7 , further comprising another dielectric structure over the second junction and extending from within the second junction and between the third gate and the fifth gate.
11. The SRAM structure as claimed in claim 7 , wherein the dielectric structure is formed of silicon nitride, silicon oxycarbonitride or silicon oxynitride to induce negative charges in the first P-type well region and the N-type well region.
12. A semiconductor structure, comprising:
a substrate;
an N-type well region over the substrate;
a P-type well region over the substrate abutting the N-type well region at a junction;
a first fin disposed over the N-type well region;
a second fin disposed over the P-type well region;
a gate dielectric layer disposed over the first fin and the second fin; and
a dielectric structure over the junction,
wherein the dielectric structure extends through the gate dielectric layer and partially into the substrate,
wherein the first fin is separated from the second fin by the dielectric structure,
wherein the dielectric structure includes a negatively charged material.
13. The semiconductor structure as claimed in claim 12 , further comprising:
a first gate structure over the first fin; and
a second gate structure over the second fin;
wherein the first gate structure is aligned with the second gate structure,
wherein the dielectric structure extends between the first gate structure and the second gate structure.
14. The semiconductor structure as claimed in claim 13 , further comprising:
an isolation layer disposed between the first gate structure and the substrate as well as between the second gate structure and the substrate.
15. The semiconductor structure as claimed in claim 14 , wherein a composition of the dielectric structure is different from a composition of the isolation layer.
16. The semiconductor structure as claimed in claim 12 , wherein the dielectric structure includes a positively charged material.
17. The semiconductor structure as claimed in claim 12 , wherein the dielectric structure comprises SiN, SiOCN, or SiON.
18. The semiconductor structure as claimed in claim 12 , further comprising a native oxide layer disposed between the dielectric structure and the N-type well region.
19. The SRAM structure as claimed in claim 7 ,
wherein the doped or plasma-treated oxygen-containing dielectric material is negatively charged.
20. The semiconductor structure as claimed in claim 12 , wherein the dielectric structure is configured to induce positive charges in the first P-type well region and the N-type well region.