Array substrate and method for preparing the same, display panel and display device
The present disclosure provides an array substrate, including: a base substrate; a planarization layer formed on the base substrate; a plurality of pixel electrodes formed on the planarization layer; and a pixel definition layer including a first pixel definition layer and a second pixel definition layer, the first pixel definition layer covering a periphery of each pixel electrode and exposing a central area of each pixel electrode, the second pixel definition layer being formed on the planarization layer between adjacent pixel electrodes and having a plurality of openings defining each sub-pixel unit; a bottom of a dam portion of the second pixel definition layer and a bottom of a dam portion of the first pixel definition layer adjacent thereto are separated by a predetermined distance, and a thickness of the second pixel definition layer is greater than a thickness of the first pixel definition layer.
1. A display panel comprising an array substrate, comprising:
a base substrate;
a planarization layer formed on the base substrate;
a plurality of pixel electrodes formed on the planarization layer; and
a pixel definition layer comprising a first pixel definition layer and a second pixel definition layer, the first pixel definition layer covering a periphery of each of the plurality of pixel electrodes and exposing a central area of each of the plurality of pixel electrodes, the second pixel definition layer being formed on the planarization layer between adjacent pixel electrodes and having a plurality of openings defining each sub-pixel unit; a bottom of a dam portion of the second pixel definition layer and a bottom of a dam portion of the first pixel definition layer adjacent thereto are separated by a predetermined distance, and a thickness of the second pixel definition layer is greater than a thickness of the first pixel definition layer,
wherein a width of the first pixel definition layer covering the periphery of each of the plurality of pixel electrodes is 1 μm to 10 μm;
wherein the plurality of openings of the second pixel defining layer is formed with an organic light-emitting layer of each sub-pixel unit, a thickness of the organic light-emitting layer being greater than a thickness of the first pixel definition layer;
wherein the organic light-emitting layer is in direct contact with a side wall of the second pixel definition layer; and
wherein the predetermined distance is configured to allow an ink forming the organic light-emitting layer have a Marangoni reflow effect occur in an area between the bottom of the dam portion of the second pixel definition layer and the bottom of a dam portion of the first pixel definition layer adjacent thereto.
2. A display device comprising the display panel of claim 1 .
3. The display panel of claim 1 , wherein the first pixel definition layer has a thickness of 100 nm to 500 nm, and the second pixel definition layer has a thickness of 1 μm to 3 μm.
4. The display panel of claim 1 , wherein the first pixel definition layer comprises one or more of silicon nitride and silicon oxide.
5. The display panel of claim 1 , wherein the second pixel definition layer comprises a photoresist material.
6. A method for preparing an array substrate, comprising:
forming a planarization layer on a base substrate;
forming a plurality of pixel electrodes on the planarization layer;
forming a first pixel definition layer to cover a periphery of each of the plurality of pixel electrodes, the first pixel definition layer exposing a central area of each of the plurality of pixel electrodes; and
forming a second pixel definition layer on the planarization layer between adjacent pixel electrodes, the second pixel definition layer having a plurality of openings defining each sub-pixel unit;
wherein a bottom of a dam portion of the second pixel definition layer and a bottom of a dam portion of the first pixel definition layer adjacent thereto are separated by a predetermined distance, and a thickness of the second pixel definition layer is greater than a thickness of the first pixel definition layer;
wherein a width of the first pixel definition layer covering the periphery of each of the plurality of pixel electrodes is 1 μm to 10 μm;
wherein the plurality of openings of the second pixel defining layer is formed with an organic light-emitting layer of each sub-pixel unit, a thickness of the organic light-emitting layer being greater than a thickness of the first pixel definition layer;
wherein the organic light-emitting layer is in direct contact with a side wall of the second pixel definition layer; and
wherein the predetermined distance is configured to allow an ink forming the organic light-emitting layer have a Marangoni reflow effect occur in an area between the bottom of the dam portion of the second pixel definition layer and the bottom of a dam portion of the first pixel definition layer adjacent thereto.
7. The method of claim 6 , wherein the forming the first pixel definition layer comprises:
forming an insulating dielectric layer covering the planarization layer and the plurality of pixel electrodes; and
etching the insulating dielectric layer to form the first dielectric layer.
8. The method of claim 7 , wherein the insulating dielectric layer comprises one or more of silicon nitride and silicon oxide.
9. The method of claim 6 , wherein the forming the second pixel definition layer comprises:
forming a photoresist material layer covering the planarization layer, the first pixel definition layer, and the plurality of pixel electrodes; and
patterning the photoresist material layer to form the second pixel definition layer.
10. The method of claim 6 , wherein the first pixel definition layer has a thickness of 100 nm to 500 nm, and the second pixel definition layer has a thickness of 1 μm to 3 μm.