Semiconductor device and method
In an embodiment, a semiconductor device includes a semiconductor substrate having a first major surface, a trench extending from the first major surface into the semiconductor substrate and having a base and a side wall extending form the base to the first major surface, and a field plate arranged in the trench and an enclosed cavity in the trench. The enclosed cavity is defined by insulating material and is laterally positioned between a side wall of the field plate and the side wall of the trench.
1. A semiconductor device, comprising:
a semiconductor substrate having a first major surface;
a trench extending from the first major surface into the semiconductor substrate and having a base and a side wall extending form the base to the first major surface;
a field plate arranged in the trench;
an enclosed cavity in the trench,
wherein the enclosed cavity is defined by insulating material and is laterally positioned between a side wall of the field plate and the side wall of the trench,
wherein the insulating material comprises silicon oxide and is devoid of silicon nitride, such that the enclosed cavity is defined only by the silicon oxide.
2. The semiconductor device of claim 1 , wherein the insulating material is arranged on the side wall of the field plate, on the side wall of the trench and on the base of the trench and extends from a side wall of the field plate to the side wall of the trench to cap the enclosed cavity.
3. The semiconductor device of claim 1 , wherein the insulating material has a thickness d 1 on the side wall of the field plate, a thickness d 2 on the side wall of the trench and a thickness d 3 between the base of the trench and a bottom of the field plate, and wherein d 3 >d 1 and d 3 >d 2 .
4. The semiconductor device of claim 3 , wherein 10 nm≤d 1 ≤650 nm, wherein 10 nm≤d 2 ≤650 nm, wherein 30 nm≤d 3 ≤2000 nm, wherein the enclosed cavity has a width w c , and wherein 10 nm≤w c ≤650 nm.
5. The semiconductor device of claim 1 , wherein the enclosed cavity laterally and continuously surrounds the field plate within the trench.
6. The semiconductor device of claim 1 , further comprising:
a drift region;
a body region on the drift region;
a source region on the body region; and
a gate electrode trench spaced apart from the trench and extending into the source region and the body region from the first major surface.
7. The semiconductor device of claim 1 , wherein the trench is columnar or elongated.
8. The semiconductor device of claim 1 , wherein the insulating material has a first thickness on the side wall of the trench and a second between the base of the trench and a bottom of the field plate, and wherein the first thickness and the second thickness are independent of each other.