Multi-wafer based light absorption apparatus and applications thereof
Structures and techniques introduced here enable the design and fabrication of photodetectors (PDs) and/or other electronic circuits using typical semiconductor device manufacturing technologies meanwhile reducing the adverse impacts on PDs' performance. Examples of the various structures and techniques introduced here include, but not limited to, a pre-PD homogeneous wafer bonding technique, a pre-PD heterogeneous wafer bonding technique, a post-PD wafer bonding technique, their combinations, and a number of mirror equipped PD structures. With the introduced structures and techniques, it is possible to implement PDs using typical direct growth material epitaxy technology while reducing the adverse impact of the defect layer at the material interface caused by lattice mismatch.
1. A light absorption apparatus, comprising:
a first silicon substrate having a first side and a second side;
a dielectric layer formed over the first side of the first silicon substrate;
a photosensitive material layer formed between the dielectric layer and the first silicon substrate, the photosensitive material layer including a composition of SixGe(1-x), wherein 0≤x<1, and wherein the photosensitive material layer comprises a doping profile parallel to the first side of the first silicon substrate, the doping profile having a higher dopant concentration in one or more areas of the photosensitive material layer;
a first metal layer formed over the photosensitive material layer as a reflector;
one or more contacts coupled to the photosensitive material layer or the first silicon substrate;
a second silicon substrate having a first side and a second side; and
an integrated circuit formed on the second silicon substrate and coupled to the one or more contacts; and
one or more lens structures formed over the second side of the first silicon substrate;
wherein the first silicon substrate and the second silicon substrate are bonded together with a bonding layer located between the first side of the first silicon substrate and the first side of the second silicon substrate.
2. The light absorption apparatus of claim 1 , wherein the second side of the first silicon substrate is arranged to receive an incident light.
3. The light absorption apparatus of claim 2 , wherein the first metal layer is configured to reflect a portion of the incident light back to the photosensitive material layer.
4. The light absorption apparatus of claim 1 , further comprising:
an integrated circuit formed on the first silicon substrate and coupled to the one or more contacts.
5. The light absorption apparatus of claim 1 , wherein the first metal layer is coupled to the dielectric layer through a via contact.
6. The light absorption apparatus of claim 1 , wherein the one or more lens structures comprise a curved silicon surface formed by etching, a number of polymer-based materials shaped into a curved structure, or a number of photonic crystal structures.
7. The light absorption apparatus of claim 1 , further comprising one or more anti-reflection coating (ARC) layers formed over the second side of the first silicon substrate.
8. The light absorption apparatus of claim 1 , wherein the photosensitive material layer formed on the first side of the first silicon substrate is a mesa.
9. The light absorption apparatus of claim 1 , wherein the first metal layer is formed over the dielectric layer.
10. The light absorption apparatus of claim 1 , wherein the bonding layer is a dielectric layer, a metal layer, or a combination thereof.
11. An optical transceiver comprising:
a transmitter; and
a receiver comprising:
a first silicon substrate having a first side and a second side;
a dielectric layer formed over the first side of the first silicon substrate;
a photosensitive material layer formed between the dielectric layer and the first silicon substrate, the photosensitive material layer including a composition of SixGe (1-x), wherein 0≤x<1;
a first metal layer formed over the photosensitive material layer as a reflector;
one or more contacts coupled to the photosensitive material layer or the first silicon substrate;
a second silicon substrate having a first side and a second side; and
an integrated circuit formed on the second silicon substrate and coupled to the one or more contacts,
wherein the first silicon substrate and the second silicon substrate are bonded together with a bonding layer located between the first side of the first silicon substrate and the first side of the second silicon substrate, and
wherein the photosensitive material layer comprises a doping profile parallel to the first side of the first silicon substrate, the doping profile having a higher dopant concentration in one or more areas of the photosensitive material layer.
12. The optical transceiver of claim 11 , wherein the second side of the first silicon substrate is arranged to receive an incident light.
13. The optical transceiver of claim 11 , further comprising one or more lens structures formed over of the second side of the first silicon substrate.
14. The optical transceiver of claim 13 , wherein the one or more lens structures comprise a curved silicon surface formed by etching, a number of polymer-based materials shaped into a curved structure, or a number of photonic crystal structures.
15. The optical transceiver of claim 13 , further comprising one or more anti-reflection coating (ARC) layers formed over the second side of the first silicon substrate.
16. The optical transceiver of claim 11 , wherein the first metal layer is formed over the dielectric layer.
17. The optical transceiver of claim 11 , wherein the bonding layer is a dielectric layer, a metal layer, or a combination thereof.