Phase change material switch and method of fabricating same
A phase change material switch includes a phase change layer disposed on a metal liner. A gate dielectric layer is disposed on the phase change layer. A metal gate liner is disposed on the gate dielectric layer.
1. A phase change material switch comprising:
a metal liner disposed on a portion of a dielectric layer;
a phase change layer disposed on the metal liner;
a gate dielectric layer disposed on the dielectric layer and the phase change layer; and
a metal gate liner disposed on the gate dielectric layer.
2. The phase change material switch of claim 1 , wherein the phase change layer comprises a phase change material.
3. The phase change material switch of claim 2 , wherein the phase change material comprises one of selenium and tellurium.
4. The phase change material switch of claim 2 , wherein the phase change material is Ge 2 Sb 2 Te 5 (GST).
5. The phase change material switch of claim 1 , further comprising:
a hardmask disposed on the metal gate liner;
one or more trenches disposed in the hardmask; and
a conductive material disposed in the one or more trenches and on the metal gate liner.
6. The phase change material switch of claim 5 , further comprising a sidewall spacer disposed on the hardmask, the metal gate liner and the gate dielectric layer.
7. The phase change material switch of claim 1 , wherein the metal gate liner and the gate dielectric layer are configured to be orthogonal to the phase change layer.
8. The phase change material switch of claim 7 , in the form of a four-terminal phase change material switch.
9. A phase change material bridge device comprising:
an electrode comprising an intra-metal dielectric layer and at least two metal contact vias in the intra-metal dielectric layer;
a metal liner disposed on a portion of the intra-metal dielectric layer and the at least two metal contact vias;
a phase change layer disposed on the metal liner;
a gate dielectric layer disposed on the metal liner and the phase change layer and a remaining portion of the intra-metal dielectric layer and the at least two metal contact vias, wherein the metal liner and the phase change layer comprise a horizontal bridge between the at least two metal contact vias; and
a metal gate liner disposed on the gate dielectric layer.
10. The phase change material bridge device of claim 9 , wherein the phase change layer comprises a phase change material.
11. The phase change material bridge device of claim 10 , wherein the phase change material comprises one of selenium and tellurium.
12. The phase change material bridge device of claim 10 , wherein the phase change material is Ge 2 Sb 2 Te 5 (GST).
13. The phase change material bridge device of claim 9 , further comprising:
a hardmask disposed on the metal gate liner;
one or more trenches disposed in the hardmask; and
a conductive material disposed in the one or more trenches and on the metal gate liner.
14. The phase change material bridge device of claim 9 , wherein the metal gate liner and the gate dielectric layer are configured to be orthogonal to the phase change layer.
15. A semiconductor structure comprising:
a semiconductor substrate;
an electrode disposed on the semiconductor substrate, wherein the electrode comprises an intra-metal dielectric layer and at least two metal contact vias in the intra-metal dielectric layer;
a metal liner disposed on a portion of the intra-metal dielectric layer and the at least two metal contact vias;
a phase change layer disposed on the metal liner; wherein the metal liner and the phase change layer comprise a horizontal bridge between the at least two metal contact vias;
a gate dielectric layer disposed on the phase change layer; and
a metal gate liner disposed on the gate dielectric layer.
16. The semiconductor structure of claim 15 , wherein the phase change layer comprises one of selenium and tellurium.
17. The semiconductor structure of claim 15 , wherein the phase change layer comprises Ge 2 Sb 2 Te 5 (GST).
18. The semiconductor structure of claim 15 , wherein the metal gate liner and the gate dielectric layer are configured to be orthogonal to the phase change layer.
19. An integrated circuit comprising:
one or more semiconductor structures, wherein at least one of the one or more semiconductor structures comprises:
a semiconductor substrate;
an electrode disposed on the semiconductor substrate, wherein the electrode comprises an intra-metal dielectric layer and at least two metal contact vias in the intra-metal dielectric layer;
a metal liner disposed on a portion of the intra-metal dielectric layer and the at least two metal contact vias;
a phase change layer disposed on the metal liner; wherein the metal liner and the phase change layer comprise a horizontal bridge between the at least two metal contact vias;
a gate dielectric layer disposed on the phase change layer; and
a metal gate liner disposed on the gate dielectric layer.
20. The integrated circuit of claim 19 , wherein the at least one of the one or more semiconductor structures further comprises:
a hardmask disposed on the metal gate liner;
one or more trenches disposed in the hardmask; and
a conductive material disposed in the one or more trenches and on the metal gate liner.
21. The integrated circuit of claim 19 , wherein the metal gate liner and the gate dielectric layer are configured to be orthogonal to the phase change layer.
22. The integrated circuit of claim 19 , wherein the phase change layer comprises one of selenium and tellurium.
23. A 4-terminal switching device comprising:
a gate dielectric layer disposed on a dielectric layer and between a phase change layer and a metal gate liner; wherein the metal gate liner and the gate dielectric layer are configured to be orthogonal to the phase change layer.
24. The 4-terminal switching device of claim 23 , further comprising the phase change layer disposed on a metal liner.
25. The 4-terminal switching device of claim 23 , wherein the phase change layer comprises one of selenium and tellurium.