Image sensor and method of fabricating the same
An image sensor is disclosed. The image sensor may include a plurality of unit pixels, a color filter array provided on the plurality unit pixels, the color filter array including color filters, an anti-reflection layer disposed between the plurality of unit pixels and the color filter array, and a fence pattern including a lower portion buried in the anti-reflection layer and an upper portion separating the color filters from each other. A width of the upper portion of the fence pattern may be greater than a width of the lower portion.
1. An image sensor, comprising:
a plurality of unit pixels;
a color filter array provided on the plurality of unit pixels, the color filter array comprising color filters;
an anti-reflection layer disposed between the plurality of unit pixels and the color filter array; and
a fence pattern including a lower portion buried in the anti-reflection layer and an upper portion separating the color filters from each other,
a protection layer disposed between the anti-reflection layer and the color filters, the protection layer covering a top surface of the anti-reflection layer and a side surface of the fence pattern,
wherein a width of the upper portion of the fence pattern is greater than a width of the lower portion,
wherein the lower portion and the upper portion of the fence pattern are insulating layers.
2. The image sensor of claim 1 , wherein the anti-reflection layer comprises a first sub layer, a second sub layer, and a third sub layer, which are sequentially stacked on the plurality of unit pixels, and
the fence pattern penetrates the third sub layer.
3. The image sensor of claim 2 , wherein the fence pattern penetrates the second sub layer.
4. The image sensor of claim 3 , wherein the fence pattern does not penetrate the first sub layer.
5. The image sensor of claim 2 , wherein the fence pattern penetrates the first sub layer.
6. The image sensor of claim 2 , wherein the third sub layer is thicker than the second sub layer, and
the second sub layer is thicker than the first sub layer.
7. The image sensor of claim 2 , wherein the second sub layer comprises at least one of hafnium oxide, tantalum oxide, or titanium oxide.
8. The image sensor of claim 2 , wherein the anti-reflection layer further comprises a fourth sub layer on the third sub layer, and
the fourth sub layer is pierced by the fence pattern.
9. The image sensor of claim 8 , wherein the fourth sub layer comprises a same material as the second sub layer.
10. The image sensor of claim 1 , wherein the plurality of unit pixels comprise photoelectric conversion regions,
the image sensor comprises a separation pattern separating the photoelectric conversion regions from each other, and
the fence pattern is overlapped with the separation pattern.
11. The image sensor of claim 10 , wherein each of the fence pattern and the separation pattern has a grid shape.
12. The image sensor of claim 10 , wherein a bottom surface of the fence pattern is in contact with a top surface of the separation pattern.
13. The image sensor of claim 10 , wherein a lower width of the fence pattern is smaller than an upper width of the separation pattern.
14. The image sensor of claim 10 , further comprising an interface between the fence pattern and the separation pattern within the anti-reflection layer.
15. The image sensor of claim 1 , wherein the fence pattern has a refractive index of 1.3 or lower.
16. The image sensor of claim 1 , wherein the protection layer is provided between the color filters and the anti-reflection layer to cover a top surface of the fence pattern.
17. The image sensor of claim 1 , wherein a top surface of the fence pattern is higher than top surfaces of the color filters.
18. The image sensor of claim 1 , wherein a width of the fence pattern gradually decreases from a top surface of the fence pattern to a bottom surface of the fence pattern.
19. An image sensor, comprising:
a plurality of unit pixels provided in a substrate;
a color filter array provided on the plurality of unit pixels, the color filter array comprising color filters;
an anti-reflection layer disposed between the plurality of unit pixels and the color filter array; and
a fence pattern including a lower portion buried in the anti-reflection layer and an upper portion separating the color filters from each other,
wherein a width of the upper portion of the fence pattern is greater than a width of the lower portion, and
wherein the anti-reflection layer comprises anti-reflection patterns, which are separated from each other by the fence pattern and are provided on the plurality of unit pixels, respectively,
wherein each of the plurality of unit pixels comprises a photoelectric conversion region,
wherein the image sensor further comprises a separation pattern separating photoelectric conversion regions from each other, wherein at least a portion of the separation pattern is formed of a material including silicon,
wherein the fence pattern is overlapped with the separation pattern, and
wherein a lower width of the fence pattern is smaller than an upper width of the separation pattern.
20. The image sensor of claim 19 , wherein a bottom surface of the fence pattern is in contact with a top surface of the separation pattern.