Lighting device
View Patent ↗A lighting device is provided. The lighting device includes a carrier, a light-emitting diode chip, and a wavelength up-conversion structure. The light-emitting diode chip is disposed on the carrier and is configured to emit a first light, which has a peak wavelength between 800 nm and 1000 nm. The wavelength up-conversion structure is disposed on the light-emitting diode chip and is configured to convert part of the first light into a second light, which has a converted spectrum between 400 nm and 700 nm.
1. A lighting device, comprising:
a carrier;
a light-emitting diode chip being disposed on the carrier and configured to emit a first light which has a peak wavelength between 800 nm and 1000 nm; and
a wavelength up-conversion structure being disposed on the light-emitting diode chip and configured to convert part of the first light into a second light which has a converted spectrum between 400 nm and 700 nm;
wherein the first light, before being converted by the wavelength up-conversion structure, has a first light intensity, and the first light that remains after the part of the first light is converted by the wavelength up-conversion structure has a second light intensity, and the second light intensity is greater than 50% of the first light intensity.
2. The lighting device according to claim 1 , wherein the wavelength up-conversion structure includes a base and a wavelength up-conversion material disposed in the base.
3. The lighting device according to claim 2 , wherein the wavelength up-conversion material is uniformly distributed in the base.
4. The lighting device according to claim 2 , wherein the lighting device further comprises a light-transmissive layer, the light-transmissive layer encapsulates the light-emitting diode chip, and the wavelength up-conversion structure is formed on the light-transmissive layer.
5. The lighting device according to claim 4 , wherein the wavelength up-conversion material is selected from a group consisting of phosphors represented by the following chemical structure formulas: NaYF 3 :Yb, LaNbO 4 :Yb, and Gd 2 O 2 S:Yb, Er.
6. The lighting device according to claim 2 , wherein the light-emitting diode chip has an upper light-emitting surface, and the wavelength up-conversion structure is covered upon the upper light-emitting surface, wherein the lighting device further comprises a light-transmissive layer, and the light-transmissive layer encapsulates the wavelength up-conversion structure and the light-emitting diode chip.
7. The lighting device according to claim 6 , wherein a light output surface of the wavelength up-conversion structure is a flat surface or a curved surface.
8. The lighting device according to claim 6 , wherein the wavelength up-conversion material is selected from a group consisting of phosphors represented by the following chemical structure formulas: NaYF 3 :Yb, LaNbO 4 :Yb, and Gd 2 O 2 S:Yb, Er.
9. The lighting device according to claim 8 , wherein the wavelength up-conversion material includes a green phosphor and a blue phosphor, the chemical structure formula of the green phosphor is NaYF 3 :Yb or LaNbO 4 :Yb, and the chemical structure formula of the blue phosphor is NaYF 3 :Yb.
10. The lighting device according to claim 9 , wherein based on the total weight of the wavelength up-conversion structure being 100 wt %, the concentration of the green phosphor ranges from 2.5 wt % to 30 wt %, and the concentration of the blue phosphor ranges from 2.5 wt % to 30 wt %.
11. The lighting device according to claim 8 , wherein the wavelength up-conversion material includes a green phosphor and a blue phosphor, the chemical structure formulas of the green phosphor and the blue phosphor both being Gd 2 O 2 S:Yb, Er.
12. The lighting device according to claim 11 , wherein based on the total weight of the wavelength up-conversion structure being 100 wt %, the concentration of the green phosphor ranges from 2.5 wt % to 30 wt %, and the concentration of the blue phosphor ranges from 2.5 wt % to 30 wt %.
13. The lighting device according to claim 1 , wherein the first light, before being converted by the wavelength up-conversion structure, has a first chromaticity CIE coordinate, while the first light that remains after the part of the first light is converted by the wavelength up-conversion structure and the second light are mixed to form a third light, and the third light has a second chromaticity CIE coordinate, which is different from the first chromaticity CIE coordinate.
14. The lighting device according to claim 13 , wherein the second chromaticity CIE coordinate has a CIE X coordinate ranging from 0.28 to 0.35, and a CIE Y coordinate ranging from 0.21 to 0.65.