Display panel and manufacturing method thereof
View Patent ↗The present disclosure provides a display panel and a manufacturing method for the display panel. The display panel includes a substrate, a switch assembly disposed on the substrate, and a light-sensing assembly disposed on a side of the switch assembly. The switch assembly comprises an indium gallium zinc oxide (IGZO) layer.
1. A display panel, comprising:
a substrate;
a switch assembly disposed on the substrate; and
a light-sensing assembly disposed on a side of the switch assembly;
wherein the switch assembly comprises an indium gallium zinc oxide (IGZO) layer; wherein the switch assembly further comprises an etching barrier layer disposed on the IGZO layer, and the light-sensing assembly is disposed on an extended portion of the etching barrier layer.
2. The display panel according to claim 1 , wherein
a light-sensing metal layer is disposed on an extended portion of the etching barrier layer and the light-sensing assembly is disposed on the light-sensing metal layer;
wherein a transparent conducting layer is disposed on the light-sensing metal layer assembly;
wherein the light-sensing assembly comprises a P-type semiconductor layer, an intrinsic semiconductor layer, and an N-type semiconductor layer in order on the light-sensing metal layer.
3. The display panel according to claim 1 , wherein the switch assembly comprises a gate electrode metal layer, a gate insulation layer, the IGZO layer, the etching barrier layer, a source electrode layer, and a drain electrode layer on the substrate in sequence; the source electrode layer and the drain electrode layer are in a same layer;
a light-sensing metal layer is disposed on an extended portion of the etching barrier layer and the light-sensing assembly is disposed on the light-sensing metal layer;
wherein the light-sensing metal layer, the source electrode layer, and the drain electrode layer are in the same layer.
4. The display panel according to claim 1 , wherein the switch assembly comprises a gate electrode metal layer, a gate insulation layer, the IGZO layer, the etching barrier layer, a source electrode layer, and a drain electrode layer on the substrate in sequence; the source electrode layer and the drain electrode layer are in a same layer.
5. The display panel according to claim 1 , wherein a light-sensing metal layer is disposed on an extended portion of the etching barrier layer and the light-sensing assembly is disposed on the light-sensing metal layer;
wherein a transparent conducting layer is disposed on the light-sensing assembly.
6. The display panel according to claim 5 , wherein the light-sensing assembly comprises a P-type semiconductor layer, an intrinsic semiconductor layer, and an N-type semiconductor layer in order on the light-sensing metal layer.
7. The display panel according to claim 6 , wherein a passivation layer covers the switch assembly and the light-sensing assembly.
8. The display panel according to claim 7 , wherein a transparent conducting layer is disposed on the passivation layer corresponding to the switch assembly, and a transparent conducting layer is disposed on the passivation layer corresponding to the light-sensing assembly.
9. The display panel according to claim 4 , wherein a light-sensing metal layer is disposed on an extended portion of the etching barrier layer and the light-sensing assembly is disposed on the light-sensing metal layer;
wherein the light-sensing metal layer, the source electrode layer, and the drain electrode layer are in the same layer.
10. The display panel according to claim 2 , wherein a passivation layer covers the switch assembly and the light-sensing assembly;
wherein a transparent conducting layer is disposed on the passivation layer corresponding to the switch assembly, and a transparent conducting layer is disposed on the passivation layer corresponding to the light-sensing assembly.
11. A display panel, comprising:
a substrate;
a switch assembly disposed on the substrate; and
a light-sensing assembly disposed on a side of the switch assembly;
wherein the switch assembly comprises an indium gallium zinc oxide (IGZO) layer;
wherein the switch assembly comprises a gate electrode metal layer, a gate insulation layer, the IGZO layer, an etching barrier layer, a source electrode layer, and a drain electrode layer on the substrate in sequence; the source electrode layer and the drain electrode layer are in a same layer;
wherein the switch assembly further comprises an etching barrier layer; the etching barrier layer is disposed on the IGZO layer; light-sensing assembly is disposed on an extended portion of the etching barrier layer;
wherein a light-sensing metal layer is disposed on the extended portion of the etching barrier layer and the light-sensing assembly is disposed on the light-sensing metal layer;
wherein a transparent conducting layer is disposed on the light-sensing assembly;
wherein the light-sensing assembly comprises P-type semiconductor layer, an intrinsic semiconductor layer, and N-type semiconductor layer in order on the light-sensing metal layer;
a light-sensing metal layer is disposed on an extended portion of the etching barrier layer and the light-sensing assembly is disposed on the light-sensing metal layer;
wherein the light-sensing metal layer, the source electrode layer, and the drain electrode layer are in the same layer.