Light emitting device including covering member and optical member
A light emitting device includes: a light emitting element comprising: a semiconductor multilayer structure that has an electrode formation surface, a light-emitting surface opposite to the electrode formation surface, and side surfaces between the electrode formation surface and the light-emitting surface, and a pair of electrodes provided on the electrode formation surface; a covering member covering the side surfaces of the light emitting element; and an optical member disposed over the light-emitting surface of the light emitting element and an upper surface of the covering member, the optical member comprising: a light-reflective portion disposed above the light emitting element, and a light-transmissive portion disposed between the light-reflective portion and the covering member and forming a part of an outer side surface of the light emitting device.
1. A light emitting device comprising:
a light emitting element comprising:
a semiconductor multilayer structure that has an electrode formation surface, a light-emitting surface opposite to the electrode formation surface, and side surfaces between the electrode formation surface and the light-emitting surface, and
a pair of electrodes provided on the electrode formation surface;
a covering member covering the side surfaces of the light emitting element;
an optical member disposed over the light-emitting surface of the light emitting element and an upper surface of the covering member, the optical member comprising:
a light-reflective portion disposed above the light emitting element, wherein a lower surface of the light-reflective portion includes a convex surface and a planar surface, and
a light-transmissive portion disposed between the light-reflective portion and the covering member and forming a part of an outer side surface of the light emitting device, wherein the light-transmissive portion does not contain a phosphor; and
a wavelength conversion member disposed between the light-emitting surface of the light-emitting element and a lower surface of the light-reflective portion such that an upper surface of the wavelength conversion member directly contacts the convex surface and the planar surface of the lower surface of the light-reflective portion, wherein side surfaces of the wavelength conversion member are covered with the light-transmissive portion of the optical member, wherein a lower surface of the wavelength conversion member is flush with a lower surface of the light-transmissive portion and the upper surface of the covering member, and wherein the wavelength conversion member contains a phosphor,
wherein a surface roughness Ra of a side surface of the light-transmissive portion is in the range of 0.1 to 50.
2. The light emitting device according to claim 1 , wherein a vertex of the convex surface is located over a center of the a light-emitting surface.
3. The light emitting device according to claim 1 ,
wherein the light-reflective portion is formed of a resin material containing a light-reflective material.
4. The light emitting device according to claim 1 ,
wherein the light-reflective portion is formed of a metal material.
5. The light emitting device according to claim 1 ,
wherein the light-reflective portion is formed of a multilayer dielectric film.
6. The light emitting device according to claim 1 ,
wherein an upper surface of the light-reflective portion is flat.
7. The light emitting device according to claim 1 ,
wherein a side surface of the optical member is inclined inward with respect to a direction perpendicular to an upper surface of the optical member.
8. The light emitting device according to claim 1 ,
wherein a side surface of the optical member is inclined outward with respect to a direction perpendicular to an upper surface of the optical member.
9. The light emitting device according to claim 1 ,
wherein the covering member is light-reflective.
10. The light emitting device according to claim 1 ,
wherein a thickness of the optical member is the same over an entirety of the optical member, and wherein a thickness of the light-transmissive portion is the same over the light-transmissive portion.
11. The light emitting device according to claim 1 ,
wherein an area of a lower surface of the wavelength conversion member is larger than an area of the light-emitting surface of the light-emitting element.
12. The light emitting device according to claim 11 ,
wherein, in a top plan view, an outer periphery of the light emitting element has a quadrilateral shape, and an outer periphery of the wavelength conversion member has a circular shape.
13. The light emitting device according to claim 12 ,
wherein, in the top plan view, the outer periphery of the wavelength conversion member circumscribes the outer periphery of the light emitting element.
14. The light emitting device according to claim 1 , further comprising:
a light guide member disposed between the wavelength conversion member and the light-emitting element.
15. The light emitting device according to claim 1 , further comprising:
a light guide member disposed to cover the side surfaces of the light-emitting element.
16. The light emitting device according to claim 1 ,
wherein the covering member covers the lower surface of the semiconductor multilayer structure and side surfaces of the electrodes.
17. The light emitting device according to claim 16 ,
wherein an area of a lower surface of the wavelength conversion member is larger than an area of the light-emitting surface of the light-emitting element.
18. The light emitting device according to claim 1 ,
wherein an inner side surface of the covering member is inclined upward and outward.
19. The light emitting device according to claim 1 ,
wherein the light-transmissive portion is not disposed above the wavelength conversion member.
20. The light emitting device according to claim 1 ,
wherein an entirety of the upper surface of the wavelength conversion member directly contacts the lower surface of the light-reflective portion.