Exciton-blocking treatments for buffer layers in organic photovoltaics
Disclosed herein are exciton-blocking treatments for buffer layers used in organic photosensitive optoelectronic devices. More specifically, the organic photosensitive optoelectronic devices described herein include at least one self-assembled monolayer disposed on the surface of an anode buffer layer. Methods of preparing these devices are also disclosed. The present disclosure further relates to methods of forming at least one self-assembled monolayer on a substrate.
1. An organic photosensitive optoelectronic device comprising:
an anode and a cathode in superposed relation;
a photoactive region comprising at least one organic donor material and at least one organic acceptor material disposed between the anode and the cathode forming a donor-acceptor heterojunction;
an anode buffer layer disposed between the anode and the photoactive region, wherein the anode buffer layer has a bottom surface closer to the anode and a top surface further from the anode; and
at least one self-assembled monolayer disposed on the top surface of the anode buffer layer between the anode buffer layer and the photoactive region,
wherein the at least one self-assembled monolayer comprises a layer of molecules having head groups that bond with the top surface of the anode buffer layer and tail groups comprising carbon-based structures, and
wherein at least one head group comprises at least one phosphonic acid.
2. The device of claim 1 , wherein the anode buffer layer comprises a transition metal oxide.
3. The device of claim 2 , wherein the transition metal oxide is chosen from MoO 3 , V 2 O 3 , ReO 3 , WO 3 TiO 2 , Ta 2 O 3 , ZnO, NiO, and alloys thereof.
4. The device of claim 3 , wherein the transition metal oxide is chosen from MoO 3 , NiO, and alloys thereof.
5. The device of claim 3 , wherein the at least one self-assembled monolayer comprises benzylphosphonic acid or a functionalized derivative thereof.
6. The device of claim 1 , wherein the at least one phosphonic acid is chosen from alkylphosphonic acids, arylphosphonic acids, and functionalized derivatives thereof.
7. The device of claim 6 , wherein the arylphosphonic acids are chosen from phenylphosphonic acid, benzylphosphonic acid, propylphenyl phosphonic acid, naphthylmethylphosphonic acid, and functionalized derivatives thereof.
8. The device of claim 6 , wherein the alkylphosphonic acids are chosen from
wherein n is chosen from 0 to 15.
9. The device of claim 8 , wherein the alkylphosphonic acids are chosen from methylphosphonic acid, ethylphosphonic acid, propylphosphonic acid, butylphosphonic acid, and functionalized derivatives thereof.
10. The device of claim 1 , wherein the at least one self-assembled monolayer comprises benzylphosphonic acid, butylphosphonic acid, or a functionalized derivative thereof.
11. The device of claim 1 , wherein the at least one self-assembled monolayer has a thickness in a range from about 0.4 nm to 1 nm.
12. The device of claim 1 , wherein the anode buffer layer in the device exhibits less exciton quenching behavior compared to the anode buffer layer in the device without the at least one self-assembled monolayer.
13. The device of claim 1 , wherein the donor-acceptor heterojunction is chosen from a planar heterojunction, a mixed heterojunction, a bulk heterojunction and a planar-mixed heterojunction.
14. The device of claim 1 , further comprising a cathode buffer layer disposed between the photoactive region and the cathode.
15. A method of forming an organic photosensitive optoelectronic device comprising:
depositing an anode buffer layer over an anode, wherein the anode buffer layer has a bottom surface closer to the anode and a top surface further from the anode;
depositing at least one self-assembled monolayer on the top surface of the anode buffer layer, wherein the at least one self-assembled monolayer comprises a layer of molecules having head groups that bond with the top surface of the anode buffer layer and tail groups comprising carbon-based structures, and
wherein at least one head group comprises at least one phosphonic acid;
depositing a photoactive region over the anode buffer layer, wherein the photoactive region comprises at least one organic donor material and at least one organic acceptor material forming a donor-acceptor heterojunction; and
depositing a cathode over the photoactive region;
wherein the at least one self-assembled monolayer is disposed between the anode buffer layer and the photoactive region.
16. The method of claim 15 , wherein the at least one self-assembled monolayer is deposited by physical vapor deposition.
17. The method of claim 15 , wherein the step of depositing at least one self-assembled monolayer comprises applying a solution to at least the top surface of the anode buffer layer.
18. The method of claim 17 , wherein the solution comprises a solvent and the at least one phosphonic acid.
19. The method of claim 18 , wherein the solvent comprises an alcohol or tetrahydrofuran (THF).
20. The method of claim 18 , wherein the solution is applied using a technique chosen from spin coating, soaking, spray coating, blade coating, and slot dye coating.
21. The method of claim 18 , wherein the anode buffer layer comprises a transition metal oxide.
22. The method of claim 17 , wherein the step of depositing at least one self-assembled monolayer further comprises heating the anode buffer layer.
23. The method of claim 22 , wherein the anode buffer layer is heated at a temperature in a range from 40° C. to 200° C.
24. The method of claim 22 , wherein the step of depositing at least one self-assembled monolayer further comprises rinsing at least the top surface of the anode buffer layer with a solvent.
25. The method of claim 24 , wherein the anode buffer layer comprises NiO or an alloy thereof.
26. The method of claim 15 , wherein the step of depositing at least one self-assembled monolayer comprises applying a phosphonic acid solution to at least the top surface of the anode buffer layer, wherein the phosphonic acid solution is applied using a technique chosen from spin coating, soaking, spray coating, blade coating, and slot dye coating.
27. The method of claim 15 , wherein the anode buffer layer comprises a transition metal oxide.
28. The method of claim 27 , wherein the transition metal oxide is chosen from MoO 3 , V 2 O 3 , ReO 3 , WO 3 TiO 2 , Ta 2 O 3 , ZnO, NiO, and alloys thereof.
29. The method of claim 15 , wherein the phosphonic acid is chosen from benzylphosphonic acid or a functionalized derivative thereof and butylphosphonic acid or a functionalized derivative thereof.
30. The method of claim 15 , wherein the at least one self-assembled monolayer has a thickness in a range from 0.4 nm to 1 nm.
31. The method of claim 15 , further comprising depositing a cathode buffer layer between the photoactive region and the cathode.