Method of manufacturing a semiconductor device and a semiconductor device
In a method of manufacturing a semiconductor device, a fin structure having a lower fin structure and an upper fin structure disposed over the lower fin structure is formed. The upper fin structure includes first semiconductor layers and second semiconductor layers alternately stacked. The first semiconductor layers are partially etched to reduce widths of the first semiconductor layers. An oxide layer is formed over the upper fin structure. A sacrificial gate structure is formed over the upper fin structure with the oxide layer. A source/drain epitaxial layer is formed over a source/drain region of the fin structure. The sacrificial gate structure is removed to form a gate space. The oxide layer is removed to expose the second semiconductor layers in the gate space. A gate structure is formed around the second semiconductor layers in the gate space.
1. A method of manufacturing a semiconductor device, comprising:
forming a fin structure having a lower fin structure and an upper fin structure disposed over the lower fin structure, the upper fin structure including first semiconductor layers and second semiconductor layers alternately stacked;
partially etching the first semiconductor layers to reduce widths of the first semiconductor layers;
after the partially etching the first semiconductor layers before forming a sacrificial gate structure, forming an oxide layer over the upper fin structure;
forming the sacrificial gate structure to cover the upper fin structure on which the oxide layer is formed;
after the sacrificial gate structure is formed, removing the oxide layer from the second semiconductor layers that laterally protrude from a side of the sacrificial gate structure;
forming a source/drain epitaxial layer to wrap around each of the second semiconductor layers from which the oxide layer is removed;
removing the sacrificial gate structure to form a gate space;
removing the remaining oxide layer to expose the second semiconductor layers in the gate space; and
forming a gate structure around the second semiconductor layers in the gate space.
2. The method of claim 1 , wherein the oxide layer is formed by thermal oxidation.
3. The method of claim 2 , wherein after the thermal oxidation, an annealing operation is performed.
4. The method of claim 3 , wherein the annealing operation is performed at 800° C. to 1000° C.
5. The method of claim 2 , wherein the etched first semiconductor layers are fully oxidized by the thermal oxidation.
6. The method of claim 2 , wherein the etched first semiconductor layers are partially oxidized by the thermal oxidation.
7. The method of claim 6 , wherein after the oxide layer is removed in the gate space, the first semiconductor layers are removed in the gate space.
8. The method of claim 1 , wherein part of the oxide layer remains between the source/drain epitaxial layer and the gate structure.
9. The method of claim 1 , further comprising forming an isolation insulating layer around the lower fin structure after the first semiconductor layers are partially etched.
10. The method of claim 1 , wherein:
the sacrificial gate structure includes a sacrificial gate electrode, and the sacrificial gate electrode is in contact with the oxide layer.
11. The method of claim 1 , wherein the first semiconductor layers are made of SiGe and the second semiconductor layers are made of Si.
12. A method of manufacturing a semiconductor device, comprising:
forming a fin structure having a lower fin structure and an upper fin structure disposed over the lower fin structure, the upper fin structure including first semiconductor layers and second semiconductor layers alternately stacked;
partially etching the first semiconductor layers to reduce widths of the first semiconductor layers;
after the partially etching the first semiconductor layers before forming a sacrificial gate structure, forming an oxide layer over the upper fin structure;
forming the sacrificial gate structure to partially cover the upper fin structure on which the oxide layer is formed;
after the sacrificial gate structure is formed, removing the oxide layer from the second semiconductor layers that laterally protrude from a side of the sacrificial gate structure;
forming a source/drain epitaxial layer to wrap around each of the second semiconductor layers from which the oxide layer is removed;
removing the sacrificial gate structure to form a gate space;
removing the remaining oxide layer in the gate space to expose the second semiconductor layers in the gate space;
forming a third semiconductor layer on each of the exposed second semiconductor layers;
forming channel wires, the channel wires being an alloy of the third semiconductor layer and the second semiconductor layer; and
forming a gate structure around the channel wires in the gate space.
13. The method of claim 12 , wherein:
the first semiconductor layers are made of SiGe,
the second semiconductor layers are made of Si, and
the third semiconductor layer is made of SiGe or Ge.
14. The method of claim 12 , wherein the oxide layer is formed by thermal oxidation.
15. The method of claim 12 , wherein the etched first semiconductors are fully oxidized by the thermal oxidation.
16. The method of claim 12 , wherein part of the oxide layer remains between the source/drain epitaxial layer and the gate structure.
17. The method of claim 12 , wherein the alloy layer is formed by a thermal treatment at a temperature from 900° C. to 1100° C.
18. A method of manufacturing a semiconductor device, comprising:
forming a fin structure having a lower fin structure and an upper fin structure disposed over the lower fin structure, the upper fin structure including first semiconductor layers and second semiconductor layers alternately stacked;
partially etching the first semiconductor layers to reduce widths of the first semiconductor layers;
after the partially etching the first semiconductor layers before forming a sacrificial gate structure, forming an oxide layer over the upper fin structure, wherein the etched first semiconductors are fully converted into oxide and the oxide layer covers the first semiconductor layers;
forming the sacrificial gate structure to partially cover the upper fin structure on which the oxide layer is formed;
removing the oxide layer from the second semiconductor layers that laterally protrude from a side of the sacrificial gate structure;
forming a source/drain epitaxial layer to wrap around each of the second semiconductor layers from which the oxide layer is removed;
removing the sacrificial gate structure to form a gate space;
removing the remaining oxide layer to exposed the second semiconductor layers in the gate space; and
forming a gate structure around the second semiconductor layers in the gate space.
19. The method of claim 18 , wherein part of the oxide layer remains between the source/drain epitaxial layer and the gate structure.
20. The method of claim 18 , wherein the oxide layer is formed by a thermal oxidation process performed at a temperature in a range from 800° C. to 1000° C.