IP Library › Granted Patent US 11,335,670
Granted Patent B2
US 11,335,670 · App. 16/907,183 · Granted May 17, 2022

Light emitting diode package structure and manufacturing method thereof

Inventors: Ming-Ru Chen (Hsinchu, TW); Tzyy-Jang Tseng (Taoyuan, TW); Cheng-Chung Lo (Hsinchu County, TW)
Assignee: Unimicron Technology Corp.
H01L25/167H01L33/62H01L33/56H01L2933/0066
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Quick Facts
Patent No.
US 11,335,670
App. No.
16/907,183
Granted
May 17, 2022
Kind
B2
Abstract

A manufacturing method of a light emitting diode (LED) package structure includes the following steps. A carrier is provided. A redistribution layer is formed on the carrier. A plurality of active devices are formed on the carrier. A plurality of LEDs are transferred on the redistribution layer. The LEDs and the active devices are respectively electrically connected to the redistribution layer. The active devices are adapted to drive the LEDs, respectively. A molding compound is formed on the redistribution layer to encapsulate the LEDs. The carrier is removed to expose a bottom surface of the redistribution layer.

Claims (25)

1. A light emitting diode (LED) package structure comprising:

a redistribution layer, wherein the redistribution layer comprises a top surface and a bottom surface opposite to each other, and comprises a first circuit structure adjacent to the top surface and a second circuit structure adjacent to the bottom surface;

a plurality of active devices, disposed on the redistribution layer and electrically connected to the redistribution layer;

a plurality of light emitting diodes, disposed on the redistribution layer and electrically connected to the redistribution layer, wherein the plurality of active devices are adapted to respectively drive the plurality of light emitting diodes; and

a molding compound, disposed on the redistribution layer and encapsulating the plurality of light emitting diodes,

wherein the plurality of active devices and the plurality of light emitting diodes are located directly on the first circuit structure.

2. The light emitting diode package structure of claim 1 , wherein each of the plurality of light emitting diodes comprises an active surface and a back surface opposite to each other, and the active surface is located between the back surface and the redistribution layer.

3. The light emitting diode package structure of claim 1 further comprising:

a dielectric layer, disposed on the redistribution layer, wherein the dielectric layer covers the plurality of active devices, and comprises a plurality of openings to expose a portion of the redistribution layer; and

a surface treatment layer, disposed in the plurality of openings and directly contacting the redistribution layer.

4. The light emitting diode package structure of claim 1 , wherein each of the plurality of light emitting diodes comprises an active surface and a back surface opposite to each other, and the back surface is located between the active surface and the redistribution layer.

5. The light emitting diode package structure of claim 4 further comprising:

a dielectric layer, disposed on the redistribution layer, wherein the dielectric layer covers the plurality of active devices and the plurality of light emitting diodes, the active surface of each of the plurality of light emitting diodes is aligned to a surface of the dielectric layer, and the dielectric layer comprises a plurality of openings to expose a portion of the redistribution layer; and

a plurality of circuit, disposed in the plurality of openings and extending to the surface of the dielectric layer to connect the active surface of each of the plurality of light emitting diodes.

6. The light emitting diode package structure of claim 1 , wherein the plurality of light emitting diodes are located on the first circuit structure, and the plurality of active devices and the second circuit structure are located on a same plane.

7. The light emitting diode package structure of claim 6 , wherein each of the plurality of light emitting diodes comprises an active surface and a back surface opposite to each other, and the active surface is located between the back surface and the redistribution layer.

8. The light emitting diode package structure of claim 7 further comprising:

a dielectric layer, disposed on the redistribution layer, wherein the dielectric layer comprises a plurality of openings to expose a portion of the redistribution layer; and

a surface treatment layer, disposed in the plurality of openings and directly contacting the redistribution layer.

9. The light emitting diode package structure of claim 6 , wherein each of the plurality of light emitting diodes comprises an active surface and a back surface opposite to each other, and the back surface is located between the active surface and the redistribution layer.

10. The light emitting diode package structure of claim 9 further comprising:

a dielectric layer, disposed on the redistribution layer, wherein the dielectric layer covers the plurality of light emitting diodes, the active surface of each of the plurality of light emitting diodes is aligned to a surface of the dielectric layer, and the dielectric layer comprises a plurality of openings to expose a portion of the redistribution layer; and

a plurality of circuit, disposed in the plurality of openings and extending to the surface of the dielectric layer to connect the active surface of each of the plurality of light emitting diodes.

11. The light emitting diode package structure of claim 1 further comprising:

an optical base material, disposed on a top surface of the molding compound.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 29, 2020
From: CHEN, MING-RU; TSENG, TZYY-JANG; LO, CHENG-CHUNG
To: UNIMICRON TECHNOLOGY CORP.
Reel/Frame 053079/0435 →
Priority Claims (1)
TW 109113363 · Apr 21, 2020 · national
Continuity (1)
Related Publication 20210327861A1 · Oct 21, 2021