Vertical resistive memory device with embedded selectors
A vertical resistive switching memory device is provided that includes a resistive random access memory (ReRAM) stack embedded in a material stack of alternating layers of an interlayer dielectric material and a recessed electrode material. A selector device encapsulates a portion of the ReRAM stack and is present in an undercut region that is laterally adjacent to each of the recessed electrode material layers of the material stack.
1. A vertical resistive memory device comprising:
a resistive random access memory (ReRAM) stack embedded in a material stack of alternating layers of an interlayer dielectric material and a recessed electrode material, wherein a topmost surface of the ReRAM stack is coplanar with a topmost surface of a topmost interlayer dielectric material layer of the material stack; and
a selector device encapsulating a portion of the ReRAM stack and present entirely in an undercut region that is laterally adjacent to each of the recessed electrode material layers of the material stack, wherein each of the recessed electrode material layers of the material stack encircles a portion of the ReRAM stack, the ReRAM stack comprises a U-shaped dielectric switching material and a U-shaped reactive electrode, and the selector device comprises a selector dielectric liner, a metal source material, and a diffusion barrier material.
2. A vertical resistive memory device comprising:
a resistive random access memory (ReRAM) stack embedded in a material stack of alternating layers of an interlayer dielectric material and a recessed electrode material, wherein the ReRAM stack comprises a U-shaped dielectric switching material and a U-shaped reactive electrode; and
a selector device encapsulating a portion of the ReRAM stack and present entirely in an undercut region that is laterally adjacent to each of the recessed electrode material layers of the material stack, wherein the selector device comprises a selector dielectric liner, a metal source material, and a diffusion barrier material.
3. A vertical resistive memory device comprising:
a resistive random access memory (ReRAM) stack embedded in a material stack of alternating layers of an interlayer dielectric material and a recessed electrode material; and
a selector device encapsulating a portion of the ReRAM stack and present entirely in an undercut region that is laterally adjacent to each of the recessed electrode material layers of the material stack, wherein a topmost surface of the ReRAM stack is coplanar with a topmost surface of a topmost interlayer dielectric material layer of the material stack, the ReRAM stack comprises a U-shaped dielectric switching material and a U-shaped reactive electrode, and the selector device comprises a selector dielectric liner, a metal source material, and a diffusion barrier material.
4. The vertical resistive memory device of claim 1 , wherein the ReRAM stack further comprises a metal fill material, wherein the reactive electrode is present entirely between the metal fill material and the dielectric switching material.
5. The vertical resistive memory device of claim 1 , wherein the selector dielectric liner is C-shaped and has a vertical portion that contacts a vertical sidewall of the recessed electrode material layer, an upper horizontal portion that contacts a topmost surface of both the metal source material and the diffusion barrier material, and a bottom horizontal portion that contacts a bottommost surface of both the metal source material and the diffusion barrier material.
6. The vertical resistive memory device of claim 5 , wherein a first vertical sidewall of the diffusion barrier material contacts a vertical sidewall of the metal source material, and a second vertical sidewall of the diffusion barrier material, that is opposite the first vertical sidewall of the diffusion barrier material, contacts a portion of the dielectric switching material.
7. The vertical resistive memory device of claim 1 , wherein each of the recessed electrode material layers of the material stack is sandwiched between a bottom interlayer dielectric material layer and a top interlayer dielectric material layer.
8. The vertical resistive memory device of claim 1 , wherein each of the interlayer dielectric material layers of the material stack has a width that is greater than a width of each of the recessed electrode material layers of the material stack.
9. The vertical resistive memory device of claim 2 , wherein each of the recessed electrode material layers of the material stack encircles a portion of the ReRAM stack.
10. The vertical resistive memory device of claim 1 , wherein the metal source material is composed of copper or silver.