Semiconductor device
View Patent ↗A semiconductor device includes first and second electrodes, a semiconductor part between the first and second electrodes, first to third control electrodes between the semiconductor part and the first electrode, first and second control terminals electrically connected respectively to the first and second control electrodes. The first to third control electrodes each are provided in a trench of the semiconductor part. The third control electrode is provided between the first and second control electrodes. The semiconductor part includes first and third layers of a first conductivity type, and second and fourth layers of a second conductivity type. The second layer is provided between the first layer and the first electrode. The third layer is selectively provided between the second layer and the first electrode. The fourth layer is provided between the first layer and the second electrode. The first electrode is electrically connected to the second and third layers.
1. A semiconductor device, comprising:
a semiconductor part including a first surface and a second surface, the second surface being at a side opposite to the first surface, the semiconductor part having first to third trenches provided in the first surface side of the semiconductor part;
a first electrode provided on the first surface of the semiconductor part;
a second electrode provided on the second surface of the semiconductor part;
a first control electrode provided between the semiconductor part and the first electrode, the first control electrode being provided in the first trench and electrically insulated from the semiconductor part by a first insulating film;
a second control electrode provided between the semiconductor part and the first electrode, the second control electrode being provided in the second trench and electrically insulated from the semiconductor part by a second insulating film;
a third control electrode provided between the semiconductor part and the first electrode, the third control electrode being provided in the third trench and electrically insulated from the semiconductor part by a third insulating film, the third control electrode being electrically isolated from the first and second control electrodes;
a first control terminal apart from the first electrode on the first surface of the semiconductor part, the first control terminal being electrically connected to the first control electrode and electrically insulated from the semiconductor part; and
a second control terminal apart from the first electrode and the first control terminal on the first surface of the semiconductor part, the second control terminal being electrically connected to the second control electrode and electrically insulated from the semiconductor part,
the first to third control electrodes being arranged in a direction along the first surface of the semiconductor part,
the third control electrode being provided between the first control electrode and the second control electrode,
the semiconductor part including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a third semiconductor layer of the first conductivity type, and a fourth semiconductor layer of the second conductivity type,
the second semiconductor layer being provided between the first semiconductor layer and the first electrode, the second semiconductor layer including
a portion facing the first control electrode via the first insulating film,
a portion facing the second control electrode via the second insulating film, and
a portion facing the third control electrode via the third insulating film,
the third semiconductor layer being selectively provided between the second semiconductor layer and the first electrode, the third semiconductor layer contacting the first insulating film,
the fourth semiconductor layer being provided between the first semiconductor layer and the second electrode,
the first electrode being electrically insulated from the first control electrode by a fourth insulating film and electrically insulated from the second control electrode by a fifth insulating film, the first electrode being electrically connected to the second and third semiconductor layers,
the second electrode being electrically connected to the fourth semiconductor layer.
2. The device according to claim 1 , wherein
the semiconductor part further includes a fifth semiconductor layer of the first conductivity type,
the fifth semiconductor layer is selectively provided between the first semiconductor layer and the second electrode, the fifth semiconductor layer including a first-conductivity-type impurity with a higher concentration than a concentration of a first-conductivity-type impurity in the first semiconductor layer,
the fourth semiconductor layer and the fifth semiconductor layer are arranged along the second surface of the semiconductor part, and
the second electrode is electrically connected to the first semiconductor layer via the fifth semiconductor layer.
3. The device according to claim 2 , wherein
a plurality of the fourth semiconductor layers and a plurality of the fifth semiconductor layers are alternately provided along the second surface of the semiconductor part.
4. The device according to claim 2 , wherein
the semiconductor part further includes a sixth semiconductor layer of the first conductivity type, the sixth semiconductor layer being provided between the first semiconductor layer and the fourth semiconductor layer and between the first semiconductor layer and the fifth semiconductor layer, and
the sixth semiconductor layer includes a first-conductivity-type impurity with a higher concentration than the concentration of the first-conductivity-type impurity in the first semiconductor layer.
5. The device according to claim 1 , wherein
the semiconductor part further includes a sixth semiconductor layer of the first conductivity type, the sixth semiconductor layer is provided between the first semiconductor layer and the fourth semiconductor layer, and
the sixth semiconductor layer includes a first-conductivity-type impurity with a higher concentration than a concentration of a first-conductivity-type impurity in the first semiconductor layer.
6. The device according to claim 1 , wherein
the first to third control electrodes each extend into the first semiconductor layer.
7. The device according to claim 1 , wherein
a plurality of the third semiconductor layers is provided, and
the semiconductor part further includes the third semiconductor layer contacting the second insulating film.
8. The device according to claim 1 , wherein
the third control electrode is electrically connected to the first electrode.
9. The device according to claim 8 , further comprising:
a sixth insulating film provided between the first electrode and the third control electrode,
the first electrode being electrically connected to the third control electrode via a contact hole provided in the sixth insulating film.
10. The device according to claim 1 , wherein
the semiconductor part further includes a seventh semiconductor layer of the first conductivity type, the seventh semiconductor layer being provided between the first semiconductor layer and the second semiconductor layer, and
the seventh semiconductor layer includes a first-conductivity-type impurity with a higher concentration than a concentration of a first-conductivity-type impurity in the first semiconductor layer.
11. The device according to claim 1 , wherein
a plurality of the third control electrodes is provided, and
at least two of the plurality of third control electrodes are provided between the first control electrode and the second control electrode.
12. The device according to claim 11 , wherein
the second semiconductor layer is provided between the two third control electrodes and further includes a portion facing each of the two third control electrodes via the third insulating film.
13. The device according to claim 11 , wherein
the first control electrode is provided between two third control electrodes of the plurality of third control electrodes.
14. The device according to claim 11 , wherein
the second control electrode is provided between two third control electrodes of the plurality of third control electrodes.
15. The device according to claim 1 , wherein
the second semiconductor layer includes:
a first portion facing the first control electrode via the first insulating film, and facing the third control electrode via the third insulating film; and
a second portion facing the second control electrode via the second insulating film, and facing the third control electrode via the third insulating film.
16. The device according to claim 1 , wherein
the semiconductor part includes an eighth semiconductor layer of the second conductivity type, the eighth semiconductor layer being selectively provided between the second semiconductor layer and the first electrode, the eighth semiconductor layer including a second-conductivity-type impurity with a higher concentration than a concentration of the second-conductivity-type impurity in the second semiconductor layer, and
the eighth semiconductor layer contacts the second semiconductor layer and is electrically connected to the first electrode.
17. The device according to claim 16 , wherein
the third semiconductor layer and the eighth semiconductor layer are arranged along the first surface of the semiconductor part.
18. The device according to claim 1 , further comprising:
a first control interconnect electrically connected to the first control electrode, the first control interconnect being electrically insulated from the semiconductor part by a seventh insulating film and connected to the first control terminal, and
a second control interconnect electrically connected to the second control electrode, the second control interconnect being electrically insulated from the semiconductor part by the seventh insulating film and connected to the second control terminal.
19. The device according to claim 18 , wherein
the first control interconnect is electrically connected to the first control electrode via a contact hole provided in the fourth insulating film, and
the second control interconnect is electrically connected to the second control electrode via a contact hole provided in the fifth insulating film.
20. The device according to claim 18 , wherein
the first to third control electrodes each extend in a first direction along the first surface of the semiconductor part, and
the first and second control interconnects each extend in a second direction crossing the first direction along the first surface of the semiconductor part.