IP Library › Granted Patent US 11,336,814
Granted Patent B2
US 11,336,814 · App. 16/662,047 · Granted May 17, 2022

Integrated circuit device

Inventors: Zen-Fong Huang (Tainan, TW); Volume Chien (Tainan, TW)
Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
H04N5/232122H01L27/1463H01L27/14621H01L27/14627H01L27/14645H04N5/2254
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Quick Facts
Patent No.
US 11,336,814
App. No.
16/662,047
Granted
May 17, 2022
Kind
B2
Abstract

Integrated circuit devices are disclosed. The integrated circuit device includes a focus detection pixel and a lens. The focus detection pixel includes a photosensitive unit and a photo-insensitive unit in a substrate. The lens is disposed over the focus detection pixel, wherein the photosensitive unit and the photo-insensitive unit are disposed opposite to each other with respect to an optical axis of the lens, and a light beam passing through the lens is simultaneously incident into the photosensitive unit and the photo-insensitive unit.

Claims (29)

1. An integrated circuit device, comprising:

a focus detection pixel, comprising a photosensitive unit and a photo-insensitive unit in a substrate;

a lens, having a single radius of curvature and an optical axis passing through a surface of the curvature at the center of the lens, the lens covering the photosensitive unit and the photo-insensitive unit, wherein the photosensitive unit is disposed at a first side of the optical axis and the photo-insensitive unit is disposed at a second side opposite to the first side of the optical axis, a light beam passing through the lens is simultaneously incident into the photosensitive unit and the photo-insensitive unit without being blocked, and the photosensitive unit detects the light beam while the photo-insensitive unit is ineffective in sensing the light beam; and

a conductive feature over the substrate between the photosensitive unit and the photo-insensitive unit, wherein the optical axis of the lens passes the conductive feature.

2. The integrated circuit device according to claim 1 , wherein a size of the photosensitive unit is about equal to a size of the photo-insensitive unit.

3. The integrated circuit device according to claim 1 , further comprising a plurality of isolation structures in the substrate, wherein the photosensitive unit and the photo-insensitive unit are respectively disposed between the isolation structures.

4. The integrated circuit device according to claim 1 , wherein the photo-insensitive unit is an insulating feature.

5. The integrated circuit device according to claim 1 , wherein the photo-insensitive unit is a doped region having the same conductivity type as the substrate.

6. The integrated circuit device according to claim 1 , wherein the photo-insensitive unit is a portion of the substrate without additional doping.

7. The integrated circuit device according to claim 1 , further includes a color filter disposed between the focus detection pixel and the lens.

8. An integrated circuit device, comprising:

a plurality of image sensing pixels;

a focus detection pixel pair, disposed among the image sensing pixels and comprising a first focus detection pixel and a second focus detection pixel, the first focus detection pixel comprising a first photosensitive unit and a first photo-insensitive unit, and the second focus detection pixel comprising a second photosensitive unit and a second photo-insensitive unit;

a first lens covering the first photosensitive unit and the first photo-insensitive unit, having a single radius of curvature and an optical axis passing through a surface of the curvature at the center of the first lens; and

an isolation structure between the first photosensitive unit and the first photo-insensitive unit, wherein the isolation structure includes a dielectric material and the optical axis of the first lens passes the isolation structure, the first photo-insensitive unit and the second photo-insensitive unit are disposed between the first photosensitive unit and the second photosensitive unit, and the first photo-insensitive unit and the second photo-insensitive unit are respectively receiving light and are ineffective in sensing the light.

9. The integrated circuit device according to claim 8 , wherein at least one of a size of the first photosensitive unit, the first photo-insensitive unit, the second photosensitive unit, and the second photo-insensitive unit is about equal to a size of the image sensing pixel.

10. The integrated circuit device according to claim 8 , further comprising a second lens, wherein the second lens has a single radius of curvature and covers the second focus detection pixel image sensing pixel.

11. The integrated circuit device according to claim 10 , wherein a size of the first lens is larger than a size of the second lens.

12. The integrated circuit device according to claim 8 , wherein the first photosensitive unit, the first photo-insensitive unit, the second photosensitive unit and the second photo-insensitive unit are disposed in a substrate, and the first photo-insensitive unit and the second photo-insensitive unit are integrally formed as the isolation structure between the first photosensitive unit and the second photosensitive unit.

13. The integrated circuit device according to claim 8 , wherein the first photosensitive unit, the first photo-insensitive unit, the second photosensitive unit and the second photo-insensitive unit are disposed in a substrate, and the first photosensitive unit and the second photosensitive unit have light sensing regions while the first photo-insensitive unit and the second photo-insensitive unit are doped regions having the same conductivity type as the substrate.

14. The integrated circuit device according to claim 8 , wherein the first photosensitive unit, the first photo-insensitive unit, the second photosensitive unit and the second photo-insensitive unit are disposed in a substrate, and the first photo-insensitive unit and the second photo-insensitive unit are portions of the substrate without additional doping.

15. The integrated circuit device according to claim 8 , further includes color filters disposed between the first focus detection pixel and the first lens.

16. An integrated circuit device, comprising:

a focus detection pixel in a substrate, comprising a light-sensitive region, a light-insensitive region and an isolation structure between the light-sensitive region and the light-insensitive region; and

a lens having a single radius of curvature and an optical axis passing through a surface of the curvature at the center of the lens, the lens fully covering the light-sensitive region and the light-insensitive region, wherein the light-insensitive region is a portion of the substrate without additional doping, the optical axis passes through the isolation structure, and a light beam passing through the lens is simultaneously incident into the light-sensitive region and the light-insensitive region.

17. The integrated circuit device according to claim 16 , wherein the light-sensitive region is disposed in an active region having an active device therein, and the light-insensitive region is disposed in a non-active region without an active device therein.

18. The integrated circuit device according to claim 16 , wherein the light-insensitive region is an insulating feature physically connecting to the isolation structure.

19. The integrated circuit device according to claim 1 , wherein the conductive feature is in direct contact with the photosensitive unit and the photo-insensitive unit.

20. The integrated circuit device according to claim 1 , further comprising an isolation structure in the substrate, wherein the optical axis of the lens passes the substrate, the isolation structure and the conductive feature.

Continuity (2)
Continuation 15060604 · Mar 4, 2016
Related Publication 20200059591A1 · Feb 20, 2020