IP Library › Granted Patent US 11,347,144
Granted Patent B2
US 11,347,144 · App. 17/096,794 · Granted May 31, 2022

Overlay improvement in nanoimprint lithography

Inventors: Anshuman Cherala (Austin, TX); Mario Johannes Meissl (Austin, TX); Byung-Jin Choi (Austin, TX)
G03F7/0002G03F9/7042
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 11,347,144
App. No.
17/096,794
Granted
May 31, 2022
Kind
B2
Abstract

Reducing an overlay error in nanoimprint lithography includes forming an imprinted substrate having pairs of corresponding peripheral overlay marks and corresponding central overlay marks on the imprinted substrate. An in-plane overlay error is assessed based on relative positions of corresponding central overlay marks, and a combined overlay error is assessed based on relative positions of corresponding peripheral overlay marks. A difference between the combined overlay error and the in-plane overlay error is assessed to yield an adjusted overlay error for each pair of corresponding peripheral overlay marks. The adjusted overlay error for each pair of corresponding peripheral overlay marks is compared with overlay errors associated with known out-of-plane orientation parameters of the template with respect to the substrate, and corrected out-of-plane orientation parameters are selected to reduce an expected out-of-plane overlay error of a subsequent imprinted substrate associated with out-of-plane orientation parameters of the template with respect to the substrate.

Claims (11)

1. An imprint lithography method, the method comprising:

detecting marks in a peripheral region of a substrate and a template or in a peripheral region of the substrate and an imprinted layer on the substrate, and marks in a central region of the substrate and the template or in a central region of the substrate and the imprinted layer,

wherein the peripheral region of the template is a region including a predetermined distance from a boundary of an imprinting portion of the template, and the central region of the template is a region inside the peripheral region of the template, and

wherein each of the peripheral region and the central region of the substrate and each of the peripheral region and the central region of the imprinted layer are corresponding to each of the peripheral region and the central region of the template;

performing a process to distinguish an in-plane component and an out-of-plane component based on a detection result of the marks in the peripheral region and a detection result of the marks in the central region; and

controlling a tilt of an imprint head or a force applied by the imprint head based on the distinguished out-of-plane component.

2. A method of manufacturing an article, the method comprising:

contacting the resist on a substrate with a template using the imprint lithography method according to the claim 1 ;

polymerizing the resist to yield a polymeric layer in contact with the template;

separating the template from the polymeric layer; and

forming an imprinted substrate to yield the article.

Continuity (3)
Division 16016016 · Jun 22, 2018
Provisional Application 62539300 · Jul 31, 2017
Related Publication 20210063870A1 · Mar 4, 2021
Cited By (1)
US 12,498,634