Formation of bottom isolation
A method may include forming a plasma of a fluorine-containing precursor and contacting a semiconductor substrate with plasma effluents. The semiconductor substrate may include a layer of a first silicon-containing material having a first germanium content formed over the semiconductor substrate, and alternating layers of a second silicon-containing material and a third silicon-containing material over the layer of the first silicon-containing material. The third silicon-containing material may have a second germanium content. The method may further include laterally recessing the third silicon-containing material relative to the first and second silicon-containing materials. The method may further include depositing a spacer material adjacent to the third silicon-containing material relative to the first and second silicon-containing materials. The method may also include etching the first silicon-containing material relative to the second silicon-containing material and the spacer material.
1. A method of forming a semiconductor structure, the method comprising:
forming a plasma of a fluorine-containing precursor in a remote plasma region of a processing chamber;
contacting a semiconductor substrate with effluents of the plasma, wherein the semiconductor substrate is housed in a processing region of the processing chamber, wherein the semiconductor substrate includes a layer of a first silicon-containing material having a first germanium content formed over the semiconductor substrate, wherein the semiconductor substrate further includes alternating layers of a second silicon-containing material and a third silicon-containing material over the layer of the first silicon-containing material, and wherein the third silicon-containing material has a second germanium content;
laterally recessing the layers of the third silicon-containing material, wherein the layers of the third silicon-containing material are selectively recessed relative to the layer of the first silicon-containing material and relative to the layers of the second silicon-containing material;
depositing a spacer material adjacent to the layers of the third silicon-containing material;
etching the layer of the first silicon-containing material, wherein the layer of the first silicon-containing material is selectively etched relative to the layers of the second silicon-containing material and the spacer material;
depositing an insulation material between the semiconductor substrate and the alternating layers of the second silicon-containing material and the third silicon-containing material;
etching the insulation material to form a bottom insulation layer between the substrate and a bottom layer of the alternating layers of the second silicon-containing material and the third silicon-containing material; and
depositing a source or drain material over exposed surfaces of the semiconductor substrate, wherein the source or drain material is adjacent to the bottom insulation layer and the alternating layers of the second silicon-containing material and the third silicon-containing material.
2. The method of claim 1 , wherein the first germanium content is less than the second germanium content.
3. The method of claim 1 , wherein a ratio of the second germanium content to the first germanium content ranges between about 1:1 and about 100:1.
4. The method of claim 1 , wherein etching the layer of the first silicon-containing material completely removes the layer of the first silicon-containing material between the semiconductor substrate and the alternating layers of the second silicon-containing material and the third silicon-containing material.
5. The method of claim 1 , wherein the insulation material comprises an oxide material.
6. The method of claim 1 ,
wherein the bottom insulation layer has a width no greater than a width of the bottom layer of the alternating layers.
7. The method of claim 6 , wherein the bottom insulation layer has a width-to-thickness aspect ratio ranging between about 2:1 and 20:1.
8. The method of claim 1 , wherein the method is performed without conducting an ion implantation operation.
9. The method of claim 1 , wherein the first silicon-containing material comprises silicon germanium, wherein the second silicon-containing material comprises silicon, and wherein the third silicon-containing material comprises silicon germanium.
10. The method of claim 1 , further comprising:
removing the layers of the third silicon-containing material; and
forming layers of a metal material, wherein the layers of the metal material and the layers of the second silicon-containing material are arranged in an alternating manner.
11. The method of claim 10 , wherein the layers of the second silicon-containing material are developed into a plurality of nanowire channels, and wherein the layers of the metal material are developed into a plurality of gates configured to control the plurality of nanowire channels.
12. The method of claim 1 , wherein the semiconductor substrate further comprises a plurality of gate formation structures each having an exposed cap material and an exposed dielectric material, wherein:
the layers of the third silicon-containing material are selectively recessed relative to the exposed cap material and the exposed dielectric material;
the spacer material is selectively deposited relative to the exposed cap material and the exposed dielectric material; and
the layer of the first silicon-containing material is selectively etched relative to the exposed cap material and the exposed dielectric material.