Solid state circuit interrupter
A circuit interrupter including a current sensor having a normal sensor output and an over current detection output, a solid state switch module structured to have a closed state to allow current to flow through the circuit interrupter and an open state to interrupt current flowing through the circuit interrupter, a gate driver structured to control the solid state switch module including a desaturation function output, wherein the gate driver is structured to cause the solid state switch module to interrupt current flowing through the circuit interrupter when the DESAT function output changes to the on state, and an electronic trip circuit structured to output a tri when the normal sensor output reaches a first threshold level or the overcurrent detection output changes to the on state.
1. A solid state switch assembly for use in a circuit interrupter, the solid state switch assembly comprising:
an input terminal;
a first conductor;
an output terminal;
a second conductor;
a solid state switch module electrically connected to the input terminal with the first conductor and electrically connected to the output terminal with the second conductor and including at least one solid state switch;
a heat sink attached to the solid state switch module;
a current sensor structured to sense current flowing through the solid state switch module;
a number of metal oxide varistors (MOVs); and
a number of fasteners,
wherein the heat sink comprises:
a first planar member;
a second planar member extending upwards from a first side of the first planar member; and
a plurality of prongs extending downwards from a second side of the first planar member, wherein a first side of the solid state switch module is attached to the second planar member of the heat sink with the number of fasteners and a second side, opposite and parallel to the first side, of the solid state switch module is attached to the number of MOVs, wherein the first side of the solid state switch module is attached to a surface of the second planar member disposed perpendicular with respect to the first side of the first planar member.
2. The solid state switch assembly of claim 1 , wherein the current sensor is disposed around the second conductor.
3. The solid state switch assembly of claim 1 , wherein the current sensor is a Hall-effect sensor.
4. The solid state switch assembly of claim 1 , wherein the at least one solid state switch is a metal oxide semiconductor field effect transistor (MOSFET) or an insulated-gate bipolar transistor (IGBT).
5. The solid state switch assembly of claim 4 , wherein the at least one solid state switch is a silicon-carbide MOSFET.
6. The solid state switch assembly of claim 1 , wherein the output terminal is disposed proximate to a left or right side of the solid state switch module and the input terminal is disposed proximate to a top side of the solid state switch module.
7. A circuit interrupter comprising:
a frame including a number of compartments; and
a number of solid state switch assemblies, each solid state switch assembly disposed in a corresponding one of the number of compartments and including:
an input terminal;
a first conductor;
an output terminal;
a second conductor;
a solid state switch module electrically connected to the input terminal with the first conductor and electrically connected to the output terminal with the second conductor and including at least one solid state switch;
a heat sink;
a current sensor structured to sense current flowing through the solid state switch module; and
a number of metal oxide varistors (MOVs),
wherein the heat sink comprises:
a first planar member;
a second planar member extending upwards from a first side of the first planar member; and
a plurality of prongs extending downwards from a second side of the first planar member, wherein a first side of the solid state switch module is attached to the second planar member of the heat sink with the number of fasteners and a second side, opposite and parallel to the first side, of the solid state switch module is attached to the number of MOVs, wherein the first side of the solid state switch module is attached to a surface of the second planar member disposed perpendicular with respect to the first side of the first planar member.
8. The circuit interrupter of claim 7 , wherein each of the number of compartments corresponds to a pole of the circuit interrupter.
9. The circuit interrupter of claim 7 , wherein each of the number of compartments forms an elongated rectangular opening structured to receive one of the number of solid state switch assemblies.
10. A method of operating a circuit interrupter having a solid state switch module including a solid state switch, the method comprising:
monitoring a characteristic of the solid state switch;
determining that the characteristic of the solid state switch meets or exceeds a predetermined threshold; and
providing an indication in response to determining that the characteristic of the solid state switch meets or exceeds the predetermined threshold, wherein the circuit interrupter includes a metal oxide varistor (MOV), wherein the method further comprises:
turning off the solid state switch;
monitoring a voltage across the MOV during a predetermined period of time after turning off the solid state switch;
determining that the voltage across the MOV falls outside a time varying predetermined range during the predetermined period of time; and
providing a second indication in response to determining that the voltage across the MOV falls outside the time varying predetermined range during the predetermined period of time.
11. The method of claim 10 , wherein the characteristic of the solid state switch is a junction temperature.
12. The method of claim 10 , wherein the solid state switch is an insulated-gate bipolar transistor (IGBT), and wherein the characteristic is a forward volt drop.
13. The method of claim 10 , wherein the solid state switch is a metal-oxide-semiconductor field-effect transistor (MOSFET), and wherein the characteristic is a body diode forward volt drop.
14. The method of claim 10 , wherein the solid state switch is a MOSFET, and wherein the characteristic is a gate threshold voltage.
15. The method of claim 10 , wherein the solid state switch is a MOSFET, and wherein the characteristic is a gate leakage current.