Semiconductor device, method for manufacturing semiconductor device, inverter circuit, driving device, vehicle, and elevator
A semiconductor device of an embodiment includes: a silicon carbide layer including a first silicon carbide region of n-type containing one metal element selected from a group consisting of nickel (Ni), palladium (Pd), platinum (Pt), and chromium (Cr) and a second silicon carbide region of p-type containing the metal element; and a metal layer electrically connected to the first silicon carbide region and the second silicon carbide region. Among the metal elements contained in the first silicon carbide region, a proportion of the metal element positioned at a carbon site is higher than a proportion of the metal element positioned at an interstitial position. Among the metal elements contained in the second silicon carbide region, a proportion of the metal element positioned at an interstitial position is higher than a proportion of the metal element positioned at a carbon site.
1. A semiconductor device comprising:
a silicon carbide layer including a first silicon carbide region of n-type containing one metal element selected from a group consisting of nickel (Ni), palladium (Pd), platinum (Pt), and chromium (Cr) and a second silicon carbide region of p-type containing the metal element; and
a metal layer electrically connected to the first silicon carbide region and the second silicon carbide region,
wherein a proportion of the metal element positioned at a carbon site of a crystal structure of silicon carbide is higher than a proportion of the metal element positioned at an interstitial position of the crystal structure of the silicon carbide, among the metal element contained in the first silicon carbide region, and
a proportion of the metal element positioned at an interstitial position of a crystal structure of silicon carbide is higher than a proportion of the metal element positioned at a carbon site of the crystal structure of the silicon carbide, among the metal element contained in the second silicon carbide region.
2. The semiconductor device according to claim 1 , further comprising
a conductive layer positioned between the silicon carbide layer and the metal layer and including a silicide of the metal element.
3. The semiconductor device according to claim 2 , wherein
a carbon concentration of the conductive layer is 1×10 17 cm −3 or less.
4. The semiconductor device according to claim 2 , wherein
an atomic ratio of the metal element to silicon (Si) in the conductive layer is 1.2 or more.
5. The semiconductor device according to claim 2 , wherein
the second silicon carbide region contains aluminum, and a concentration distribution of aluminum in the second silicon carbide region and the conductive layer has a peak at an interface between the second silicon carbide region and the conductive layer.
6. The semiconductor device according to claim 1 , wherein
a concentration of the metal element in the first silicon carbide region is 1×10 18 cm −3 or more, and
a concentration of the metal element in the second silicon carbide region is 1×10 18 cm −3 or more.
7. The semiconductor device according to claim 1 , wherein
the metal layer is in contact with the silicon carbide layer.
8. The semiconductor device according to claim 1 , wherein
the first silicon carbide region and the second silicon carbide region are in contact with each other.
9. An inverter circuit comprising the semiconductor device according to claim 1 .
10. A driving device comprising the semiconductor device according to claim 1 .
11. A vehicle comprising the semiconductor device according to claim 1 .
12. An elevator comprising the semiconductor device according to claim 1 .