Self-aligned collector heterojunction bipolar transistor (HBT)
Certain aspects of the present disclosure generally relate to an integrated circuit (IC) having a heterojunction bipolar transistor (HBT) device. The HBT device generally includes an emitter region, a collector region, and a base region disposed between the emitter region and the collector region, the base region and the collector region comprising different semiconductor materials. The HBT device may also include an etch stop layer disposed between the collector region and the base region. The HBT device also includes an emitter contact, wherein the emitter region is between the emitter contact and the base region, and a collector contact, wherein the collector region is between the collector contact and the base region.
1. An integrated circuit (IC) comprising a heterojunction bipolar transistor (HBT) device, the HBT device comprising:
an emitter region;
a collector region;
a base region disposed between the emitter region and the collector region, the base region and the emitter region comprising different semiconductor materials, wherein a lateral edge of the collector region is aligned with a lateral edge of the base region;
an etch stop layer disposed between the collector region and the base region;
an emitter contact, wherein the emitter region is between the emitter contact and the base region; and
a collector contact, wherein the collector region is between the collector contact and the base region.
2. The IC of claim 1 , further comprising a complementary metal-oxide-semiconductor (CMOS) device adjacent to the HBT device.
3. The IC of claim 2 , further comprising a substrate, wherein the CMOS device is disposed between the HBT device and the substrate.
4. The IC of claim 2 , further comprising a substrate, wherein the CMOS device and the HBT device are disposed above the substrate.
5. The IC of claim 2 , wherein the HBT device comprises a group III-V semiconductor and wherein the CMOS device comprises a different semiconductor.
6. The IC of claim 1 , further comprising a ledge region, wherein a first portion of the ledge region is disposed between the emitter region and the base region and wherein a second portion of the ledge region extends beyond a lateral edge of the emitter region.
7. The IC of claim 6 , further comprising a base contact disposed adjacent to the base region.
8. The IC of claim 6 , wherein the ledge region and the etch stop layer comprise indium gallium phosphide (InGaP).
9. The IC of claim 6 , wherein the base region and the collector region comprise gallium arsenide (GaAs).
10. The IC of claim 1 , wherein the emitter region is trapezoidal shaped.
11. The IC of claim 10 , wherein a first side of the trapezoidal-shaped emitter region is longer than a second side of the trapezoidal-shaped emitter region, wherein the first side and the second side are bases of the trapezoidal-shaped emitter region, and wherein the first side is disposed closer to the base region than the second side.
12. The IC of claim 1 , wherein at least one of the collector region or the base region comprises gallium arsenide (GaAs).
13. The IC of claim 12 , wherein the emitter region comprises indium gallium arsenide (InGaAs).
14. The IC of claim 1 , wherein another lateral edge of the collector region is aligned with another lateral edge of the base region.