Device comprising physical properties controlled by microstructure and method of manufacturing the same
The present invention relates to a device comprising physical properties controlled by a microstructure and a method of manufacturing the same. The present invention discloses a base layer having a patterned surface; and a two-dimensional structure layer formed on the patterned surface of the base layer, the two-dimensional structure layer extending on and in compliance to topography of the patterned surface of the base layer, such that change of physical properties of the two-dimensional structure layer conforms to the stress generated along the topography.
1. A device comprising physical properties controlled by a microstructure, comprising:
a base layer having a patterned surface; and
a two-dimensional structure layer formed on the patterned surface of the base layer, the two-dimensional structure layer extending on and in compliance with topography of the patterned surface of the base layer,
wherein the two-dimensional structure layer comprises a two-dimensional material having a lattice arrangement of a two-dimensional pattern, and the change of the physical properties of the two-dimensional structure layer conforms to stress generated along the topography.
2. The device comprising physical properties controlled by a microstructure according to claim 1 , wherein the two-dimensional structure layer comprises one or more single-layer two-dimensional materials.
3. The device comprising physical properties controlled by a microstructure according to claim 2 , wherein the two-dimensional structure layer comprises 1 to 30 layers.
4. The device comprising physical properties controlled by a microstructure according to claim 2 , wherein the two-dimensional structure layer comprises 1 to 5 layers.
5. The device comprising physical properties controlled by a microstructure according to claim 2 , wherein the two-dimensional material comprises at least one of the group consisting of graphene, transition metal disulfide, silicene and germanene.
6. The device comprising physical properties controlled by a microstructure according to claim 1 , wherein the stress leads to localized lattice deformation of the two-dimensional structure layer.
7. The device comprising physical properties controlled by a microstructure according to claim 6 , wherein the change of physical properties of the two-dimensional structure layer conforms to the lattice deformation.
8. The device comprising physical properties controlled by a microstructure according to claim 1 , wherein the physical properties of the two-dimensional structure layer comprise at least one of: an energy gap, an electric conductivity, a magnetic flux property, an optical refractive index, a light transmittance and a thermal conductivity.
9. The device comprising physical properties controlled by a microstructure according to claim 1 , wherein the topography of the two-dimensional structure layer comprises a periodic topography pattern.
10. The device comprising physical properties controlled by a microstructure according to claim 1 , wherein the topography of the two-dimensional structure layer comprises a corrugated topography pattern.
11. The device comprising physical properties controlled by a microstructure according to claim 1 , wherein the topography of the two-dimensional structure layer comprises a triangular wave topography pattern.
12. The device comprising physical properties controlled by a microstructure according to claim 1 , wherein the physical properties comprise an electric conductivity, and at least partial current path in the device comprising physical properties controlled by the microstructure conforms to the topography of the patterned surface of the base layer.
13. A method of forming a device comprising physical properties controlled by a microstructure, comprising:
patterning a surface of a base layer; and
forming a two-dimensional structure layer on the patterned surface of the base layer, the two-dimensional structure layer extending on and in compliance with topography of the patterned surface of the base layer, and the two-dimensional structure layer comprising a two-dimensional material having a lattice arrangement of a two-dimensional pattern, such that the change of the physical properties of the two-dimensional structure layer conforms to stress generated along the topography.
14. The method according to claim 13 , wherein patterning the surface of the base layer is conducted by at least one of: a photolithography technology, an e-beam lithography technology and a self-assembly technology.
15. The method according to claim 13 , wherein forming the two-dimensional structure layer on the patterned surface of the base layer is conducted by at least one of: a chemical vapor deposition, a physical vapor deposition technology, a dry transfer technology, an atomic layer deposition technology, an electrochemical stripping method, a mechanical stripping method and an oxidation reduction method.