Semiconductor device and manufacturing method thereof
A semiconductor device includes a substrate, a channel stack, source/drain contacts, and a gate electrode. The channel stack is over the substrate and includes a 2D channel layer and a barrier layer. An energy band gap of the barrier layer is greater than an energy band gap of the 2D channel layer. The source/drain contacts are in contact with the channel stack. The gate electrode is above the substrate.
1. A semiconductor device, comprising:
a substrate;
a channel stack over the substrate and comprising:
a 2D channel layer;
a barrier layer, wherein an energy band gap of the barrier layer is greater than an energy band gap of the 2D channel layer; and
a spacer layer between and in contact with the 2D channel layer and the barrier layer, wherein the spacer layer comprises transition metal oxide (TMO), transition metal dichalcogenide (TMDC) materials, or combinations thereof, wherein a doping concentration of the barrier layer is greater than a doping concentration of a portion of the spacer layer in contact with the barrier layer;
source/drain contacts in contact with the channel stack; and
a gate electrode below the 2D channel layer.
2. The semiconductor device of claim 1 , wherein the barrier layer and the source/drain contacts are above the 2D channel layer.
3. The semiconductor device of claim 2 , wherein the source/drain contacts are in contact with the 2D channel layer.
4. The semiconductor device of claim 2 , wherein the source/drain contacts are spaced apart from the 2D channel layer.
5. The semiconductor device of claim 1 , wherein the source/drain contacts are above the 2D channel layer and the barrier layer is below the 2D channel layer.
6. The semiconductor device of claim 5 , wherein the source/drain contacts are in contact with the 2D channel layer.
7. The semiconductor device of claim 5 , wherein the source/drain contacts are spaced apart from the 2D channel layer.
8. The semiconductor device of claim 5 , wherein a width of the barrier layer is less than a width of the 2D channel layer.
9. The semiconductor device of claim 1 , wherein a thickness of the barrier layer is in a range of about 0.8 nm to about 4 nm.
10. The semiconductor device of claim 1 , wherein a dopant concentration of the 2D channel layer is in a range of about 10 11 cm −3 to about 10 14 cm −3 .
11. A semiconductor device, comprising:
a substrate;
a channel layer above the substrate;
a barrier layer in contact with the channel layer, wherein the barrier layer and the channel layer are 2D materials with different affinity;
source/drain contacts above the channel layer; and
a gate electrode below the channel layer, wherein a width of the gate electrode is greater than a width of the barrier layer.
12. The semiconductor device of claim 11 , wherein a dopant concentration of the barrier layer is greater than a dopant concentration of the channel layer.
13. The semiconductor device of claim 11 , wherein the channel layer is made of graphene, silicene, black phosphorene (BP), or transition metal dichalcogenide (TMDC) materials.
14. The semiconductor device of claim 11 , wherein the barrier layer is made of transition metal oxide (TMO), transition metal dichalcogenide (TMDC) materials, or combinations thereof.
15. The semiconductor device of claim 11 , wherein the channel layer is in contact with opposite sidewalls of the barrier layer.
16. A manufacturing method for a semiconductor device, comprising:
forming a gate electrode above a substrate;
forming a 2D channel layer above the gate electrode;
forming a spacer layer on and in contact with the 2D channel layer, wherein a thickness of the spacer layer is less than a thickness of the 2D channel layer;
forming a top barrier layer above and in contact with the spacer layer, wherein an energy band gap of the top barrier layer is greater than an energy band gap of the 2D channel layer;
forming openings in the top barrier layer; and
forming source/drain contacts in the openings, wherein a portion of the spacer layer is directly between the gate electrode and one of the source/drain contacts.
17. The method of claim 16 , further comprising:
doping the top barrier layer.
18. The method of claim 16 , further comprising:
forming a bottom barrier layer above the substrate, and the 2D channel layer is formed above the bottom barrier layer.
19. The method of claim 16 , wherein the top barrier layer is made of 2D materials.
20. The method of claim 16 , wherein an energy band gap difference between the top barrier layer and the 2D channel layer is in a range of about 0.01 eV to about 3.9 eV.