Light detection apparatus and light detection system
An avalanche diode includes a first semiconductor region of a first conductivity type disposed in a first depth, a second semiconductor region disposed in a second depth deeper than the first depth with respect to a first surface, in contact with the first semiconductor region, and a third semiconductor region disposed in a third depth deeper than the second depth with respect to the first surface, in contact with the second semiconductor region. Avalanche multiplication is caused by the first and third semiconductor regions. The first, second, and third semiconductor regions overlap in plan view. A potential difference between the first and second semiconductor regions with respect to main charge carriers of a semiconductor region of the first conductive type is smaller than a potential difference between the first and third semiconductor regions with respect to the charge carriers.
1. A light detection apparatus comprising:
a semiconductor substrate having a first surface, and having a second surface facing the first surface; and
a pixel unit including a plurality of pixels disposed on the semiconductor substrate, each pixel including an avalanche diode, a first separation portion and a second separation portion,
wherein the avalanche diode comprises:
a first semiconductor region of a first conductivity type disposed in a first depth;
a second semiconductor region disposed in a second depth deeper than the first depth with respect to the first surface, in contact with the first semiconductor region;
a third semiconductor region disposed in a third depth deeper than the second depth with respect to the first surface, in contact with the second semiconductor region; and
a fourth semiconductor region disposed in a fourth depth deeper than the third depth with respect to the first surface, in contact with the third semiconductor region,
wherein the avalanche diode causes avalanche multiplication by the first and third semiconductor regions,
wherein the first, second, third, and fourth semiconductor regions have overlapped portions in a plan view,
wherein a difference in potential height between the first and second semiconductor regions with respect to main carrier electric charges of a semiconductor region of the first conductive type is smaller than a difference in potential height between the first and third semiconductor regions with respect to the carrier electric charges,
wherein a potential height of the fourth semiconductor region with respect to the carrier electric charges is lower than a potential height of the third semiconductor region with respect to the carrier electric charge,
wherein the first separation portion and the second separation portion are disposed in the first to fourth depths,
wherein the avalanche diode is disposed between the first and second separation portions in the plan view,
wherein the first and second separation portions are connected to a contact plug applied with a predetermined potential, and
wherein the fourth semiconductor region is in contact with the first and second separation portions and applied with a potential based on the predetermined potential by the first and second separation portions.
2. The light detection apparatus according to claim 1 , further comprising, in the first depth, a sixth semiconductor region of the first conductivity type in a region in contact with the first semiconductor region, between the first semiconductor region and the first separation portion, the sixth semiconductor region having a larger potential height with respect to the carrier electric charges than the first semiconductor region.
3. The light detection apparatus according to claim 2 , wherein the sixth semiconductor region is disposed from a side portion to a bottom of the first semiconductor region.
4. The light detection apparatus according to claim 2 , further comprising a seventh semiconductor region in the third depth, in contact with the third semiconductor region and the first separation portion, the seventh semiconductor region having a higher potential with respect to the carrier electric charges than the third semiconductor region.
5. The light detection apparatus according to claim 4 , further comprising a fifth semiconductor region disposed in a fifth depth deeper than the fourth depth with respect to the first surface, in contact with the fourth semiconductor region, wherein the fifth semiconductor region is in contact with the first and second separation portions.
6. The light detection apparatus according to claim 2 , further comprising a fifth semiconductor region disposed in a fifth depth deeper than the fourth depth with respect to the first surface, in contact with the fourth semiconductor region, wherein the fifth semiconductor region is in contact with the first and second separation portions.
7. The light detection apparatus according to claim 1 , further comprising a fifth semiconductor region disposed in a fifth depth deeper than the fourth depth with respect to the first surface, in contact with the fourth semiconductor region, wherein the fifth semiconductor region is in contact with the first and second separation portions.
8. The light detection apparatus according to claim 7 , wherein the potential height of the fourth semiconductor region with respect to the carrier electric charges is lower than the potential height of the fifth semiconductor region with respect to the carrier electric charges.
9. The light detection apparatus according to claim 1 , wherein, in the fourth semiconductor region, the potential height with respect to the carrier electric charges decreases from the second surface to the first surface.
10. A light detection system including a plurality of the light detection apparatuses according to claim 1 , the light detection system comprising:
a wavelength conversion unit configured to convert light in a first wavelength band into light in a second wavelength band different from the first wavelength band; and
a signal processing unit configured to perform processing for combining a plurality of images obtained from a plurality of digital signals stored in the plurality of light detection apparatuses,
wherein the light in the second wavelength band output from the wavelength conversion unit is incident to the plurality of light detection apparatuses.
11. The light detection system including a plurality of the light detection apparatuses according to claim 1 , the light detection system comprising:
a light emitting unit configured to emit light to be detected by the light detection apparatus, and
a distance calculation unit configured to perform distance calculation by using digital signals stored in the light detection apparatus.
12. An apparatus comprising:
the light detection apparatus according to claim 1 ;
a distance information acquisition unit configured to acquire information about a distance to a subject based on a parallax image based on a signal from the light detection apparatus; and
a control unit configured to control movement of the apparatus based on the distance information.