Bulk acoustic wave structure, bulk acoustic wave device, and manufacturing method thereof
A bulk acoustic wave (BAW) structure includes a single crystal piezoelectric material layer, a first electrode, a second electrode and an acoustic reflector. The first and second electrodes are respectively located on a first surface and a second surface of the single crystal piezoelectric material layer. The area of the second electrode is greater than or equal to that of the second surface of the single crystal piezoelectric material layer, and the contact area of the single crystal piezoelectric material layer with the second electrode is equal to the area of the second surface of the single crystal piezoelectric material layer. The acoustic reflector is disposed on a surface of the first electrode.
1. A manufacturing method of a bulk acoustic wave structure, comprising:
providing a single crystal substrate;
forming a single crystal piezoelectric material layer on the single crystal substrate, wherein the single crystal piezoelectric material layer has a first surface and a second surface opposing each other, and the second surface is in direct contact with the single crystal substrate;
forming a first electrode on the first surface of the single crystal piezoelectric material layer;
forming a first acoustic reflector on a surface of the first electrode;
removing the single crystal substrate; and
forming a second electrode on the second surface of the single crystal piezoelectric material layer, wherein an area of the second electrode is greater than or equal to an area of the second surface of the single crystal piezoelectric material layer, and a contact area of the single crystal piezoelectric material layer with the second electrode is equal to the area of the second surface of the single crystal piezoelectric material layer.
2. The manufacturing method of a bulk acoustic wave structure according to claim 1 , wherein an etching selectivity of the single crystal substrate to the single crystal piezoelectric material layer is greater than 10:1.
3. The manufacturing method of a bulk acoustic wave structure according to claim 1 , wherein a material of the single crystal substrate comprises zinc oxide, silicon carbide or silicon.
4. The manufacturing method of a bulk acoustic wave structure according to claim 1 , wherein a material of the single crystal piezoelectric material layer comprises aluminum nitride, LiTaO 3 , LiNbO 3 , quartz or diamond.
5. The manufacturing method of a bulk acoustic wave structure according to claim 1 , further comprising forming a second acoustic reflector on a surface of the second electrode after forming the second electrode.
6. A manufacturing method of a bulk acoustic wave device, comprising:
performing the manufacturing method according to claim 1 to form at least one bulk acoustic wave structure;
forming a plurality of bumps below the bulk acoustic wave structure, wherein the bumps are electrically connected to the first electrode and the second electrode respectively of the bulk acoustic wave structure;
flip-chip bonding the bulk acoustic wave structure to a carrier via the bumps; and
forming a package on the carrier and encapsulating the bulk acoustic wave structure with the package.
7. The manufacturing method of a bulk acoustic wave device according to claim 6 , wherein a gap is formed between the carrier and the bulk acoustic wave structure.
8. The manufacturing method of a bulk acoustic wave device according to claim 7 , wherein the package does not completely fill the gap.
9. The manufacturing method of a bulk acoustic wave device according to claim 7 , wherein the package fills up the gap.
10. The manufacturing method of a bulk acoustic wave device according to claim 6 , wherein forming the bulk acoustic wave structure comprises: forming a plurality of the bulk acoustic wave structures connected in series; and in the step of flip-chip bonding, bonding the bulk acoustic wave structures to the carrier.