Low power cryo-CMOS circuits with non-volatile threshold voltage offset compensation
Systems and methods related to low power cryo-CMOS circuits with non-volatile threshold voltage offset compensation are provided. A system includes a plurality of devices configured to operate in a cryogenic environment, where a first distribution of a threshold voltage associated with the plurality of devices has a first value indicative of a measure of spread of the threshold voltage. The system further includes control logic, coupled to each of the plurality of devices, configured to modify a threshold voltage associated with each of the plurality of devices such that the first distribution is changed to a second distribution having a second value of the measure of spread of the threshold voltage representing a lower variation among threshold voltages of the plurality of devices.
1. A system for interfacing with qubit gates comprising:
a plurality of devices configured to operate in a cryogenic environment, wherein a first distribution of a threshold voltage associated with the plurality of devices having a first value indicative of a measure of spread of the threshold voltage; and
control logic, coupled to each of the plurality of devices, configured to modify a threshold voltage associated with each of the plurality of devices such that the first distribution is changed to a second distribution having a second value of the measure of spread of the threshold voltage representing a lower variation among threshold voltages of the plurality of devices.
2. The system of claim 1 , wherein the measure of spread is selected from among one of variance, standard deviation, or range.
3. The system of claim 1 , wherein each of the plurality of devices comprises a floating gate.
4. The system of claim 3 , wherein the system comprises a charge pump, wherein each of the plurality of devices comprises a terminal for receiving a trim voltage via the charge pump, and wherein the control logic is further configured to modify a threshold voltage associated with each of the plurality devices by either injecting charge into the floating gate or removing charge from the floating gate.
5. The system of claim 3 , wherein the system comprises a charge pump, and wherein each of the plurality of devices comprises a gate terminal for receiving a voltage via the charge pump, and wherein the control logic is further configured to modify a threshold voltage associated with each of the plurality devices by either injecting charge into the floating gate or removing charge from the floating gate.
6. The system of claim 3 , wherein the system comprises a charge pump, and wherein each of the plurality of devices comprises a terminal coupled to a split-gate, for receiving a trim voltage via the charge pump, and wherein the control logic is further configured to modify a threshold voltage associated with each of the plurality devices by either injecting charge into the floating gate or removing charge from the floating gate.
7. The system of claim 3 , wherein the control logic is further configured to determine a threshold voltage associated with each of the plurality of devices.
8. A method in a system comprising a plurality of devices having an associated threshold voltage, the method comprising:
determining a variation among threshold voltages of the plurality of devices while operating the integrated circuit in a cryogenic environment, wherein each of the plurality of devices comprises a floating gate; and
modifying threshold voltages associated with at least a subset of the plurality of devices by: (1) injecting charge into a respective floating gate or (2) removing charge from a respective floating gate such that a variation among threshold voltages of the plurality of devices is lowered.
9. The method of claim 8 , wherein the determining the variation comprises determining a measure of spread is selected from among one of variance, standard deviation, or range.
10. The method of claim 8 , wherein the determining the variation among the threshold voltages comprises determining an error rate associated with an operation associated with the integrated circuit.
11. The method of claim 8 , wherein the determining the variation among the threshold voltages comprises determining a threshold voltage associated with each of the plurality of devices.
12. The method of claim 8 , wherein the modifying the threshold voltage associated with each of the plurality devices comprises applying a voltage via a terminal for receiving the trim voltage.
13. The method of claim 8 , wherein the modifying the threshold voltage associated with each of the plurality devices comprises applying a voltage via a gate terminal.
14. A system comprising:
a first integrated circuit comprising a quantum device including a plurality of qubit gates, wherein the quantum device is configured to operate at a cryogenic temperature; and
a second integrated circuit configured to operate at the cryogenic temperature, wherein the first integrated circuit is coupled to the second integrated circuit, and wherein the second integrated circuit comprises:
a plurality of devices, wherein a first distribution of a threshold voltage associated with the plurality of devices having a first value indicative of a measure of spread of the threshold voltage, and
control logic, coupled to each of the plurality of devices, configured to modify a threshold voltage associated with each of the plurality of devices such that the first distribution is changed to a second distribution having a second value of the measure of spread of the threshold voltage representing a lower variation among threshold voltages of the plurality of devices.
15. The system of claim 14 , wherein the measure of spread is selected from among one of variance, standard deviation, or range.
16. The system of claim 15 , wherein each of the plurality of devices comprises a floating gate.
17. The system of claim 16 , wherein the system comprises a charge pump, and wherein each of the plurality of devices comprises a terminal for receiving a trim voltage via the charge pump, and wherein the control logic is further configured to modify a threshold voltage associated with each of the plurality devices by either injecting charge into the floating gate or removing charge from the floating gate.
18. The system of claim 16 , wherein the system comprises a charge pump, and wherein each of the plurality of devices comprises a gate terminal for receiving a voltage via the charge pump, and wherein the control logic is further configured to modify a threshold voltage associated with each of the plurality devices by either injecting charge into the floating gate or removing charge from the floating gate.
19. The system of claim 16 , wherein the system comprises a charge pump, and wherein each of the plurality of devices comprises a terminal coupled to a split-gate, for receiving a trim voltage via the charge pump, and wherein the control logic is further configured to modify a threshold voltage associated with each of the plurality devices by either injecting charge into the floating gate or removing charge from the floating gate.
20. The system of claim 16 , wherein the control logic is further configured to determine a threshold voltage associated with each of the plurality of devices.