Multizone flow gasbox for processing chamber
Exemplary semiconductor processing chambers may include a gasbox characterized by a first surface and a second surface opposite the first surface. The gasbox may define a central aperture. The gasbox may define an annular channel extending about the central aperture. The annular channel may be fluidly accessible from the first surface of the gasbox. The gasbox may further define a plurality of outlet apertures extending from the annular channel through the second surface of the gasbox.
1. A semiconductor processing chamber comprising:
a gasbox characterized by a first surface and a second surface opposite the first surface, wherein the gasbox defines a central aperture, wherein the gasbox defines an annular channel extending about the central aperture, wherein the annular channel is fluidly accessible from the first surface of the gasbox, wherein the gasbox defines a spacer within the annular channel separating the annular channel into a first zone and a second zone radially outward of the first zone, wherein the gasbox further defines a plurality of outlet apertures extending from the annular channel through the second surface of the gasbox, the plurality of outlet apertures comprising a first set of outlet apertures providing fluid access from the first zone of the annular channel and a second set of outlet apertures radially outward of the first set of outlet apertures providing fluid access from the second zone of the annular channel.
2. The semiconductor processing chamber of claim 1 , further comprising:
a substrate support within the semiconductor processing chamber, and
a blocker plate positioned between the gasbox and the substrate support.
3. The semiconductor processing chamber of claim 2 , wherein a volume is defined between the gasbox and the blocker plate, and wherein the volume is fluidly accessible from the central aperture through the gasbox and from the plurality of outlet apertures of the gasbox.
4. The semiconductor processing chamber of claim 1 , wherein an inlet aperture through the gasbox is fluidly coupled with one or more conductance paths defined within the gasbox and extending from the inlet aperture through the gasbox to the annular channel.
5. The semiconductor processing chamber of claim 4 , wherein the one or more conductance paths comprise a recursive path extending radially outward to the annular channel.
6. The semiconductor processing chamber of claim 1 , wherein the gasbox defines a cooling channel in the first surface of the gasbox extending about the central aperture through the gasbox.
7. The semiconductor processing chamber of claim 6 , wherein the annular channel is defined within the gasbox between the cooling channel and the second surface of the gasbox.
8. The semiconductor processing chamber of claim 1 , further comprising:
an insulator seated on the first surface of the gasbox and providing fluid access to the central aperture, wherein the annular channel is formed radially outward of an outer edge of the insulator.
9. A semiconductor processing chamber comprising:
a substrate support positioned within a processing region of the semiconductor processing chamber;
a gasbox characterized by a first surface and a second surface opposite the first surface, wherein the gasbox defines a central aperture, wherein the gasbox defines an annular channel extending about the central aperture, wherein the annular channel is fluidly accessible from the first surface of the gasbox, wherein the gasbox defines a spacer within the annular channel separating the annular channel into a first zone and a second zone radially outward of the first zone, wherein the gasbox further defines a plurality of outlet apertures extending from the annular channel through the second surface of the gasbox, the plurality of outlet apertures comprising a first set of outlet apertures providing fluid access from the first zone of the annular channel and a second set of outlet apertures radially outward of the first set of outlet apertures providing fluid access from the second zone of the annular channel, wherein the gasbox defines a cooling channel in the first surface of the gasbox extending about the central aperture through the gasbox, and wherein the annular channel is defined within the gasbox between the cooling channel and the second surface of the gasbox;
a blocker plate positioned between the gasbox and the substrate support; and
a faceplate positioned between the blocker plate and the substrate support.
10. The semiconductor processing chamber of claim 8 , wherein the spacer projects away from a surface of the annular channel in which the plurality of outlet apertures are defined.
11. The semiconductor processing chamber of claim 9 , further comprising:
an insulator seated on the first surface of the gasbox and providing fluid access to the central aperture, wherein the annular channel is formed radially outward of an outer edge of the insulator.