Semiconductor package with interposer
A semiconductor package includes a first package substrate, a first semiconductor chip on the first package substrate, a molding layer covering side walls of the first semiconductor chip and including through holes, an interposer on the first semiconductor chip and the molding layer, conductive connectors in the through holes of the molding layer and connected to the first package substrate and the interposer, and an insulating filler including a first portion that fills the through holes of the molding layer so as to surround side walls of the conductive connectors.
1. A semiconductor package comprising:
a first package substrate;
a first semiconductor chip on the first package substrate;
a molding layer covering side walls of the first semiconductor chip and including through holes, wherein an upper surface of the molding layer is coplanar with an upper surface of the first semiconductor chip;
an interposer on the first semiconductor chip and the molding layer;
conductive connectors in the through holes of the molding layer and connected to the first package substrate and the interposer; and
an insulating filler comprising a first portion that fills the through holes of the molding layer so as to surround side walls of the conductive connectors.
2. The semiconductor package of claim 1 , wherein the insulating filler further comprises a second portion between the first semiconductor chip and the interposer and between the molding layer and the interposer.
3. The semiconductor package of claim 1 , wherein the conductive connectors are spaced apart from an inner wall of the molding layer with the first portion of the insulating filler interposed between the conductive connectors and the inner wall of the molding layer.
4. The semiconductor package of claim 1 , wherein the interposer comprises interposer lower pads connected to the conductive connectors, and
wherein at least parts of the interposer lower pads protrude from a lower surface of the interposer.
5. The semiconductor package of claim 1 , wherein the molding layer comprises first trenches, and
wherein the interposer comprises first protrusions in the first trenches of the molding layer.
6. The semiconductor package of claim 1 , wherein the first semiconductor chip comprises second trenches, and
wherein the interposer comprises second protrusions in the second trenches of the first semiconductor chip.
7. The semiconductor package of claim 1 , wherein the interposer comprises an interposer substrate and spacers provided on a lower surface of the interposer substrate,
wherein the spacers contact the upper surface of the first semiconductor chip and maintain the interposer substrate in spaced apart relationship with the first semiconductor chip by a uniform distance, and
wherein side walls of each of the spacers are surrounded by the insulating filler.
8. The semiconductor package of claim 1 , further comprising an embedded semiconductor device embedded in the first package substrate and electrically connected to the first semiconductor chip.
9. The semiconductor package of claim 1 , further comprising:
a second package substrate on the interposer; and
a second semiconductor chip on the second package substrate.
10. A semiconductor package comprising:
a package substrate;
a semiconductor chip on the package substrate;
a molding layer covering side walls of the semiconductor chip and including first trenches;
an interposer on the semiconductor chip and the molding layer, the interposer comprising an interposer substrate and first protrusions protruding from a lower surface of the interposer substrate, the first protrusions extending into the first trenches of the molding layer; and
conductive connectors penetrating through the molding layer and connected to the package substrate and the interposer.
11. The semiconductor package of claim 10 , wherein the first protrusions support the interposer substrate so that the interposer substrate is spaced apart from an upper surface of the molding layer and an upper surface of the semiconductor chip.
12. The semiconductor package of claim 11 , wherein the interposer further comprises second protrusions protruding from the lower surface of the interposer substrate and extending into second trenches of the semiconductor chip, and
wherein the second protrusions support the interposer substrate so that the interposer substrate is spaced apart from the upper surface of the molding layer and the upper surface of the semiconductor chip in cooperation with the first protrusions.
13. The semiconductor package of claim 11 , wherein the interposer further comprises spacers on the lower surface of the interposer substrate, wherein the spacers contact the upper surface of the semiconductor chip, and
wherein the spacers support the interposer substrate so that the interposer substrate is spaced apart from the upper surface of the molding layer and the upper surface of the semiconductor chip by a uniform distance.
14. The semiconductor package of claim 10 , further comprising an insulating filler,
wherein the insulating filler comprises:
a first portion in through holes of the molding layer so as to surround side walls of the conductive connectors; and
a second portion between an upper surface of the semiconductor chip and the lower surface of the interposer substrate and between an upper surface of the molding layer and a lower surface of the interposer substrate.
15. The semiconductor package of claim 10 , wherein the first protrusions contact the molding layer.
16. A semiconductor package comprising:
a first package including a first package substrate, a first semiconductor chip on the first package substrate, and a molding layer covering side walls of the first semiconductor chip;
an interposer on the first package;
conductive connectors in through holes of the molding layer and electrically connecting the interposer to the first package substrate;
an insulating filler filling a gap between the interposer and the first package substrate and filling the through holes of the molding layer so as to surround side walls of the conductive connectors; and
a second package on the interposer and including a second package substrate and a second semiconductor chip on the second package substrate,
wherein an upper surface of the molding layer is coplanar with an upper surface of the first semiconductor chip.
17. The semiconductor package of claim 16 , wherein, with respect to a first direction from a lower surface of the molding layer toward an upper surface of the molding layer, widths of lower portions of the through holes of the molding layer gradually increase along the first direction and widths of upper portions of the through holes of the molding layer gradually reduce along the first direction.
18. The semiconductor package of claim 17 , wherein widths of lower portions of the conductive connectors gradually increase along the first direction and widths of upper portions of the conductive connectors gradually reduce along the first direction.
19. The semiconductor package of claim 16 , wherein the molding layer comprises an epoxy molding compound, and
wherein the insulating filler comprises a material different from that of the molding layer.
20. The semiconductor package of claim 16 , wherein the interposer comprises an interposer substrate and first protrusions on a lower surface of the interposer substrate,
wherein the molding layer comprises first trenches into which the first protrusions extend, and
wherein a depth of each of the first trenches is less than a height of each of the first protrusions.