Magnetoresistance effect element
A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, and the tunnel barrier layer has a spinel structure in which cations are disordered, and contains a divalent cation of a non-magnetic element, a trivalent cation of a non-magnetic element, oxygen, and one of nitrogen and fluorine.
1. A method of manufacturing a ferromagnetic tunnel junction comprising:
a step of forming a first ferromagnetic metal layer on a substrate;
a step of forming a tunnel barrier layer on the first ferromagnetic layer;
a step of natural oxidizing the substrate by introducing at least Ar, oxygen, and nitrogen in a state in which the substrate is heated; and
a step of forming a second ferromagnetic metal layer on the tunnel barrier layer,
wherein the step of forming a tunnel barrier layer comprises a plurality of steps of forming a metal layer represented by a composition formula Mg 1-x Al x (0<x<1) and a step of oxidizing the metal layer formed in at least one of the plurality of steps of forming a metal layer.
2. A method of manufacturing a ferromagnetic tunnel junction comprising:
a step of forming a first ferromagnetic metal layer on a substrate;
a step of forming a tunnel barrier layer on the first ferromagnetic layer;
a step of inductively coupled plasma oxidizing the substrate by introducing at least Ar, oxygen, and one of nitrogen and fluorine in a state in which the substrate is heated and
a step of forming a second ferromagnetic metal layer on the tunnel barrier layer,
wherein the step of forming a tunnel barrier layer comprises a plurality of steps of forming a metal layer represented by a composition formula Mg 1-x Al x (0<x<1) and a step of oxidizing the metal layer formed in at least one of the plurality of steps of forming a metal layer.
3. A method of manufacturing a ferromagnetic tunnel junction comprising:
a step of forming a first ferromagnetic metal layer on a substrate;
a step of forming a tunnel barrier layer on the first ferromagnetic layer;
a step of natural oxidizing the substrate by introducing at least Ar, fluorine, and oxygen in a state in which the substrate is heated and
a step of forming a second ferromagnetic metal layer on the tunnel barrier layer,
wherein the step of forming a tunnel barrier layer comprises a plurality of steps of forming a metal layer represented by a composition formula Mg 1-x Al x (0<x<1) and a step of oxidizing the metal layer formed in at least one of the plurality of steps of forming a metal layer.
4. The method of manufacturing a ferromagnetic tunnel junction according to any one of claims 1 to 3 further comprising:
a step of inductively coupled plasma oxidizing the substrate by introducing at least Ar, fluorine, and oxygen in a state in which the substrate is heated.
5. The method of manufacturing a ferromagnetic tunnel junction according to any one of claims 1 to 3 further comprising:
a step of natural oxidizing the substrate by introducing at least Ar, oxygen, and nitrogen after a substrate temperature is lowered.
6. The method of manufacturing a ferromagnetic tunnel junction according to claim 5 ,
the substrate temperature is lowered to a temperature in a range of −70° C. or more and −30° C. or less.
7. The method of manufacturing a ferromagnetic tunnel junction according to any one of claims 1 to 3 further comprising:
a step of natural oxidizing the substrate by introducing at least Ar, fluorine, and oxygen after a substrate temperature is lowered.
8. The method of manufacturing a ferromagnetic tunnel junction according to claim 7 ,
the substrate temperature is lowered to a temperature in a range of −70° C. or more and −30° C. or less.
9. The method of manufacturing a ferromagnetic tunnel junction according to any one of claims 1 to 3 ,
the substrate temperature is lowered to a temperature in a range of −70° C. or more and −30° C. or less.
10. The method of manufacturing a ferromagnetic tunnel junction according to claim 1 further comprising:
a step of inductively coupled plasma oxidizing the substrate by introducing at least Ar, oxygen, and nitrogen in a state in which the substrate is heated.
11. The method of manufacturing a ferromagnetic tunnel junction according to claim 1 further comprising:
a step of inductively coupled plasma oxidizing the substrate by introducing at least Ar, fluorine, and oxygen in a state in which the substrate is heated.