Semiconductor packages having thermal through vias (TTV)
A semiconductor package includes a die, a dummy die, a plurality of conductive terminals, an insulating layer and a plurality of thermal through vias. The dummy die is disposed aside the die. The conductive terminals are disposed at a first side of the dummy die and the die and electrically connected to the dummy die and the die. The insulating layer is disposed at a second side opposite to the first side of the dummy die and the die. The thermal through vias penetrating through the insulating layer.
1. A semiconductor package, comprising:
a die;
a dummy die aside the die;
a plurality of conductive terminals disposed at a first side of the dummy die and the die and electrically connected to the dummy die and the die;
an insulating layer at a second side opposite to the first side of the dummy die and the die; and
a plurality of thermal through vias penetrating through the insulating layer.
2. The semiconductor package as claimed in claim 1 , wherein the dummy die is electrically connected to the die.
3. The semiconductor package as claimed in claim 1 , wherein the thermal through vias are electrically connected to the conductive terminals.
4. The semiconductor package as claimed in claim 1 further comprising a redistribution layer structure disposed between the insulating layer and the die and the dummy die, wherein the redistribution layer structure is electrically connected to the thermal through vias, the die and the dummy die.
5. The semiconductor package as claimed in claim 1 further comprising a redistribution layer structure disposed between the conductive terminals and the die and the dummy die, wherein the redistribution layer structure is electrically connected to the thermal through vias, the die and the dummy die.
6. The semiconductor package as claimed in claim 1 , wherein the die is disposed in a first region, the dummy die is disposed in a second region, a density of the thermal through vias in the first region is equal to the number of the thermal through vias in the first region divided by an area of the first region, a density of the thermal through vias in the second region is equal to the number of the thermal through vias in the second region divided by an area of the second region, and the density of the thermal through vias in the first region is larger than the density of the thermal through vias in the second region.
7. The semiconductor package as claimed in claim 1 , wherein the die is disposed in a first region, the dummy die is disposed in a second region, a density of the connectors in the first region is equal to the number of the connectors in the first region divided by an area of the first region, a density of the connectors in the second region is equal to the number of the connectors in the second region divided by an area of the second region, and the density of the connectors in the second region is larger than the density of the connectors in the first region.
8. The semiconductor package as claimed in claim 1 further comprising at least one dipole antenna aside the die and the dummy die.
9. A semiconductor package, comprising:
a die;
at least one thermal through via over the die; and
a conductive paste between the die and the at least one thermal through via,
wherein the at least one thermal through via is electrically connected to the die through the conductive paste.
10. The semiconductor package as claimed in claim 9 , wherein the conductive paste is in direct contact with the die.
11. The semiconductor package as claimed in claim 9 further comprising a dummy die disposed aside and electrically connected to the at least one thermal through via.
12. The semiconductor package as claimed in claim 9 further comprising a dummy die aside the die, wherein the conductive paste is in direct contact with the die and the dummy die.
13. The semiconductor package as claimed in claim 9 further comprising a redistribution layer structure disposed between and electrically connected to the conductive paste and the at least one thermal through via.
14. The semiconductor package as claimed in claim 13 , wherein the conductive paste is in direct contact with a conductive portion of the redistribution layer structure.
15. The semiconductor package as claimed in claim 9 further comprising an insulating layer over the die, wherein the at least one thermal through via penetrates through the insulating layer.
16. A semiconductor package, comprising:
a die and at least one first through via, encapsulated by an encapsulant, the at least one first through via electrically connected to the die;
at least one thermal through via in an insulating layer over the encapsulant; and
a redistribution layer structure between the encapsulant and the at least one thermal through via, wherein the redistribution layer structure is electrically connected to the at least one first through via and the at least one thermal through via, and the at least one thermal through via is electrically connected to the die through the at least one first through via.
17. The semiconductor package as claimed in claim 16 further comprising a die attach film between the die and the at least one thermal through via.
18. The semiconductor package as claimed in claim 16 further comprising a conductive paste between the die and the at least one thermal through via.
19. The semiconductor package as claimed in claim 16 further comprising at least one second through via having a width larger than the at least one first through via, wherein the at least one first through via is disposed between the die and the at least one second through via.
20. The semiconductor package as claimed in claim 16 , wherein surfaces of the die, the at least one first through via and the encapsulant are substantially coplanar.