Oxide sintered body and transparent conductive oxide film
An oxide sintered body containing indium, hafnium, tantalum, and oxygen as constituent elements, in which when indium, hafnium, and tantalum are designated as In, Hf, and Ta, respectively, the atomic ratio of Hf/(In+Hf+Ta) is equal to 0.002 to 0.030, and the atomic ratio of Ta/(In+Hf+Ta) is equal to 0.0002 to 0.013.
1. A transparent conductive oxide film, comprising:
an oxide including indium, hafnium, tantalum, and oxygen as constituent elements,
wherein the oxide satisfies that an atomic ratio of Hf/(In+Hf+Ta) is equal to 0.002 to 0.030, and that an atomic ratio of Ta/(In+Hf+Ta) is equal to 0.0002 to 0.013, where In, Hf and Ta are indium, hafnium, and tantalum, respectively.
2. The transparent conductive oxide film according to claim 1 , wherein the atomic ratio of Hf/(In+Hf+Ta) is equal to 0.005 to 0.025.
3. The transparent conductive oxide film according to claim 1 , wherein the atomic ratio of Hf/(In+Hf+Ta) is equal to 0.007 to 0.021.
4. The transparent conductive oxide film according to claim 1 , wherein the atomic ratio of Ta/(In+Hf+Ta) is equal to 0.001 to 0.010.
5. The transparent conductive oxide film according to claim 1 , wherein the atomic ratio of Ta/(In+Hf+Ta) is equal to 0.003 to 0.010.
6. The transparent conductive oxide film according to claim 1 , wherein the atomic ratio of Hf/(In+Hf+Ta) is equal to 0.005 to 0.025, and the atomic ratio of Ta/(In+Hf+Ta) is equal to 0.001 to 0.010.