Low dark current radiation detector and method of making the same
A radiation sensor includes a radiation-sensitive semiconductor layer, a cathode electrode disposed over a front side of the radiation-sensitive semiconductor layer that is configured to be exposed to radiation, at least one anode electrode disposed over a backside of the radiation-sensitive semiconductor layer, and a potential barrier layer located between the cathode electrode and the front side of the radiation-sensitive semiconductor layer.
1. A radiation sensor, comprising:
a radiation-sensitive semiconductor layer;
a cathode electrode disposed over a front side of the radiation-sensitive semiconductor layer that is configured to be exposed to radiation;
at least one anode electrode disposed over a backside of the radiation-sensitive semiconductor layer; and
a potential-barrier layer located between the cathode electrode and the front side of the radiation-sensitive semiconductor layer,
wherein the radiation sensor has a dark current having a temperature dependence in which a rate of increase in the dark current per degree Kelvin is in a range from 0.1% per Kelvin to 1.2% per degree Kelvin in a temperature range from 300 K to 335 K.
2. The radiation sensor of claim 1 , wherein the potential-barrier layer contacts both the cathode electrode and the front side of the radiation-sensitive semiconductor layer.
3. The radiation sensor of claim 1 , wherein the radiation-sensitive semiconductor layer comprises n-type cadmium zinc telluride.
4. The radiation sensor of claim 3 , wherein a ratio of an atomic concentration of zinc atoms to a sum of the atomic concentration of zinc atoms and an atomic concentration of the cadmium atoms is in range from 0.02 to 0.20 in the n-type cadmium zinc telluride.
5. The radiation sensor of claim 3 , wherein the potential-barrier layer comprises a dielectric material having a thickness that allows charge carrier tunneling therethrough.
6. The radiation sensor of claim 5 , wherein the dielectric material comprises an oxide of cadmium zinc telluride.
7. The radiation sensor of claim 5 , wherein the dielectric material comprises a material selected from silicon oxide, aluminum oxide, aluminum nitride, or a dielectric oxide of a transition metal element.
8. The radiation sensor of claim 3 , wherein the potential-barrier layer comprises a dielectric material having a barrier height that allows charge carrier thermionic emission thereover.
9. The radiation sensor of claim 3 , wherein the potential-barrier layer comprises a barrier semiconductor layer.
10. The radiation sensor of claim 9 , wherein the barrier semiconductor layer comprises zinc sulfide, manganese sulfide, magnesium sulfide, zinc selenide, magnesium selenide, cadmium selenide, magnesium telluride, manganese telluride, silicon, germanium, silicon germanium or cadmium zinc telluride having a wider bandgap than a bandgap of the radiation-sensitive semiconductor material layer.
11. A radiation detector, comprising:
the radiation sensor of claim 3 ; and
a signal processing unit including at least one pixel detector circuit that is electrically connected to the at least one anode electrode.
12. A method of operating the radiation detector of claim 11 , comprising:
applying a negative voltage to the cathode electrode relative to the at least one anode electrode; and
detecting current from the radiation sensor by the signal processing unit, wherein dark current increases by less than 50% during operation in a temperature range between 300 degrees Kelvin and 335 degrees Kelvin.
13. The radiation sensor of claim 1 , wherein the potential-barrier layer has a thickness in a range from 1 nm to 300 nm.
14. A method of operating a radiation detector which comprises:
a radiation sensor comprising a radiation-sensitive semiconductor layer which comprises n-type cadmium zinc telluride, a cathode electrode disposed over a front side of the radiation-sensitive semiconductor layer that is configured to be exposed to radiation, at least one anode electrode disposed over a backside of the radiation-sensitive semiconductor layer, and a potential-barrier layer located between the cathode electrode and the front side of the radiation-sensitive semiconductor layer; and
a signal processing unit including at least one pixel detector circuit that is electrically connected to the at least one anode electrode,
the method comprising:
applying a negative voltage to the cathode electrode relative to the at least one anode electrode; and
detecting current from the radiation sensor by the signal processing unit, wherein dark current increases by less than 50% during operation in a temperature range between 300 degrees Kelvin and 335 degrees Kelvin.