8T dual port SRAM and a manufacturing method thereof

1. An eight-transistor dual port SRAM, comprising:

a first pass gate transistor, a drain of the first pass gate transistor is used as a first read/write port of a first group of read/write dual ports of the SRAM, and a source of the first pass gate transistor is connected to an internal node of the SRAM;

a second pass gate transistor, a drain of the second pass gate transistor is used as a second read/write port of the first group of read/write dual ports, and a source of the second pass gate transistor is connected to an inverting internal node of the SRAM;

a third pass gate transistor, a drain of the third pass gate transistor is used as a first read/write port of a second group of read/write dual ports of the SRAM, and a source of the third pass gate transistor is connected to the inverting internal node; and

a fourth pass gate transistor, a drain of the fourth pass gate transistor is used as a second read/write port of the second group of read/write dual ports, and a source of the fourth pass gate transistor is connected to the internal node of the SRAM, wherein

on-resistance of the second pass gate transistor is smaller than that of the first pass gate transistor, so that a first read current flowing from the first read/write port of the first group of read/write dual ports is equal to a second read current flowing from the second read/write port of the first group of read/write dual port,

on-resistance of the fourth pass gate transistor is smaller than that of the third pass gate transistor, so that a third read current flowing from the first read/write port of the second group of read/write dual ports is equal to a fourth read current flowing from the second read/write port of the second group of read/write dual port.

2. The SRAM of claim 1 , wherein the first read current flows through a first end of the internal node from the first read/write port of the first group of read/write dual ports, and flows out of the SRAM from a first pull-down transistor of the SRAM to read data stored in the internal node, a gate of the first pull-down transistor is connected to the first end of the internal node,

the second read current flows into a first end of the inverting internal node from the second read/write port of the first group of read/write dual ports, and flows out of the SRAM from a second end of the inverting internal node, through a second pull-down transistor of the SRAM, to read data stored in the inverting internal node, a gate of the second pull-down transistor is connected to the second end of the inverting internal node,

the third read current flows through the second end of the inverting internal node from the first read/write port of the second group of read/write dual ports, and flows out of the SRAM from the second pull-down transistor to read the data stored in the inverting internal node,

the fourth read current flows into a second end of the internal node from the second read/write port of the second group of read/write dual ports, and flows out of the SRAM from the first end of the internal node, through the first pull-down transistor, to read the data stored in the internal node.

3. The SRAM of claim 2 , wherein the difference between the on-resistance of the first pass gate transistor and the on-resistance of the second pass gate transistor is equal to an impedance from the source of the second pass gate transistor to the second end of the inverting internal node,

the difference between the on-resistance of the third pass gate transistor and the on-resistance of the fourth pass gate transistor is equal to an impedance from the source of the fourth pass gate transistor to the first end of the internal node.

4. The SRAM of claim 1 , wherein the first pass gate transistor, the third pass gate transistor, a first pull-down transistor of the SRAM, and a second pull-down transistor of the SRAM are ion implanted by a basic lightly doped drain implanting process and a basic pocket implanting process,

the second pass gate transistor and the fourth pass gate transistor are ion implanted by a further performed heavy lightly doped drain implanting process on basis of the basic lightly doped drain implanting process and the basic pocket implanting process.

5. The SRAM of claim 1 , wherein the first pass gate transistor, the third pass gate transistor, a first pull-down transistor of the SRAM, and a second pull-down transistor of the SRAM are ion implanted by a basic lightly doped drain implanting process and a basic pocket implanting process,

the second pass gate transistor and the fourth pass gate transistor are ion implanted by a heavy lightly doped drain implanting process and a light pocket implanting process.

6. A method for manufacturing an eight-transistor dual port SRAM, comprising:

generating a circuit structure of the SRAM on a substrate, wherein the circuit structure comprises:

a first pass gate transistor, a drain of the first pass gate transistor is used as a first read/write port of a first group of read/write dual ports of the SRAM, and a source of the first pass gate transistor is connected to an internal node of the SRAM;

a second pass gate transistor, a drain of the second pass gate transistor is used as a second read/write port of the first group of read/write dual ports, and a source of the second pass gate transistor is connected to an inverting internal node of the SRAM;

a third pass gate transistor, a drain of the third pass gate transistor is used as a first read/write port of a second group of read/write dual ports of the SRAM, and a source of the third pass gate transistor is connected to the inverting internal node; and

a fourth pass gate transistor, a drain of the fourth pass gate transistor is used as a second read/write port of the second group of read/write dual ports, and a source of the fourth pass gate transistor is connected to the internal node of the SRAM; and

performing ion implantation on the first pass gate transistor, the second pass gate transistor, the third pass gate transistor, and the fourth pass gate transistor, making on-resistance of the second pass gate transistor smaller than that of the first pass gate transistor, so that a first read current flowing from the first read/write port of the first group of read/write dual ports is equal to a second read current flowing from the second read/write port of the first group of read/write dual port, and making on-resistance of the fourth pass gate transistor smaller than that of the third pass gate transistor, so that a third read current flowing from the first read/write port of the second group of read/write dual ports is equal to a fourth read current flowing from the second read/write port of the second group of read/write dual port.

7. The method of claim 6 , wherein the first read current flows through a first end of the internal node from the first read/write port of the first group of read/write dual ports, and flows out of the SRAM from a first pull-down transistor of the SRAM to read data stored in the internal node, a gate of the first pull-down transistor is connected to the first end of the internal node,

the second read current flows into a first end of the inverting internal node from the second read/write port of the first group of read/write dual ports, and flows out of the SRAM from a second end of the inverting internal node, through a second pull-down transistor of the SRAM, to read data stored in the inverting internal node, a gate of the second pull-down transistor is connected to the second end of the inverting internal node,

the third read current flows through the second end of the inverting internal node from the first read/write port of the second group of read/write dual ports, and flows out of the SRAM from the second pull-down transistor to read the data stored in the inverting internal node,

the fourth read current flows into a second end of the internal node from the second read/write port of the second group of read/write dual ports, and flows out of the SRAM from the first end of the internal node, through the first pull-down transistor, to read the data stored in the internal node.

8. The method of claim 7 , wherein the step of performing ion implantation comprises:

performing different ion implantation on the first pass gate transistor and the second pass gate transistor to make difference between the on-resistance of the first pass gate transistor and the on-resistance of the second pass gate transistor equal to an impedance from the source of the second pass gate transistor to the second end of the inverting internal node; and

performing different ion implantation on the third pass gate transistor and the fourth pass gate transistor to make difference between the on-resistance of the third pass gate transistor and the on-resistance of the fourth pass gate transistor equal to an impedance from the source of the fourth pass gate transistor to the first end of the internal node.

9. The method of claim 6 , wherein the step of performing ion implantation comprises:

performing a basic lightly doped drain implanting process and a basic pocket implanting process on the first pass gate transistor, the second pass gate transistor, the third pass gate transistor, the fourth pass gate transistor, a first pull-down transistor of the SRAM, and a second pull-down transistor of the SRAM; and

further performing a heavy lightly doped drain implanting process on the second pass gate transistor and the fourth pass gate transistor that have been performed with the basic lightly doped drain implanting process and the basic pocket implanting process.

10. The method of claim 9 , wherein the step of performing the basic lightly doped drain implanting process and the basic pocket implanting process further comprises:

covering an original implanting mask on the first pass gate transistor, the second pass gate transistor, the third pass gate transistor, the fourth pass gate transistor, the first pull-down transistor and the second pull-down transistor to perform the basic lightly doped drain implanting process and the basic pocket implanting process,

the step of performing the heavy lightly doped drain implanting process further comprises:

after completing the basic lightly doped drain implanting process and the basic pocket implanting process, covering an extra implanting mask on the second pass gate transistor and the fourth pass gate transistor to perform the heavy lightly doped drain implanting process.

11. The method of claim 6 , wherein the step of performing ion implantation comprises:

performing a basic lightly doped drain implanting process and a basic pocket implanting process on the first pass gate transistor, the third pass gate transistor, a first pull-down transistor of the SRAM and a second pull-down transistor of the SRAM; and

performing a heavy lightly doped drain implanting process and a light pocket implanting process on the second pass gate transistor and the fourth pass gate transistor.

12. The method of claim 11 , wherein the step of performing the basic lightly doped drain implanting process and the basic pocket implanting process further comprises:

covering a first implanting mask on the first pass gate transistor, the third pass gate transistor, the first pull-down transistor and the second pull-down transistor to perform the basic lightly doped drain implanting process and the basic pocket implanting process,

the step of performing the heavy lightly doped drain implanting process and the light pocket implanting process further comprises:

covering a second implanting mask on the second pass gate transistor and the fourth pass gate transistor to perform the heavy lightly doped drain implanting process and the light pocket implanting process.

13. A computer-readable storage medium, having computer instructions stored thereon, wherein the manufacturing method according to claim 6 is implemented when the computer instructions are executed by a processor.