Memory system and method for measuring capacitance value
According to one or more embodiments, a memory system includes a nonvolatile semiconductor memory, a capacitor, a constant current circuit, a measurement circuit, and a controller. The capacitor stores charges to be supplied to the nonvolatile semiconductor memory. The constant current circuit extracts the charge from the capacitor at a constant current. The measurement circuit measures a terminal voltage of the capacitor. The controller controls the nonvolatile semiconductor memory. The controller calculates a capacitance value of the capacitor based both on a resistance value of a leakage resistance of the capacitor and a change in the measured terminal voltage over time in each of a first period during which the capacitor naturally discharges and a second period during which the constant current circuit extracts the charge from the capacitor.
1. A memory system, comprising:
a nonvolatile semiconductor memory;
a capacitor configured to store charge to be supplied to the nonvolatile semiconductor memory;
a constant current circuit configured to extract charge from the capacitor at a constant current;
a measurement circuit configured to measure a terminal voltage of the capacitor; and
a controller configured to:
control the nonvolatile semiconductor memory; and
calculate a capacitance value of the capacitor based on a resistance value of a leakage resistance through which a leakage current of the capacitor flows and a change in the measured terminal voltage over time in a first period during which the capacitor naturally discharges and a second period during which the constant current circuit extracts charge from the capacitor.
2. The memory system according to claim 1 , wherein the measurement circuit is configured to measure:
the terminal voltage from a start of a first measurement until the terminal voltage drops by a first differential voltage during the first period; and
the terminal voltage from a start of a second measurement until the terminal voltage drops by a second differential voltage during the second period.
3. The memory system according to claim 2 , further comprising:
a timer circuit configured to measure:
a first elapsed time from the start of the first measurement until the terminal voltage drops by the first differential voltage; and
a second elapsed time from the start of the second measurement until the terminal voltage drops by the second differential voltage.
4. The memory system according to claim 3 , wherein the controller calculates the capacitance value of the capacitor and the resistance value of the leakage resistance based on the first differential voltage, the second differential voltage, the first elapsed time, and the second elapsed time.
5. The memory system according to claim 1 , wherein the first and second periods are continuous with each other.
6. The memory system according to claim 1 , further comprising:
a power management circuit configured to:
control power supply to the nonvolatile semiconductor memory and the controller; and
supply charge stored in the capacitor to the nonvolatile semiconductor memory and the controller.
7. The memory system according to claim 6 , wherein the power management circuit is further configured to control charging and discharging of the capacitor.
8. The memory system according to claim 6 , wherein the constant current circuit and the measurement circuit are incorporated in the power management circuit.
9. The memory system according to claim 1 , wherein the measurement circuit is incorporated in the controller.
10. The memory system according to claim 9 , wherein the measurement circuit comprises an analog-to-digital converter.
11. The memory system according to claim 1 , wherein the nonvolatile semiconductor memory is a NAND flash memory.
12. A memory system, comprising:
a nonvolatile semiconductor memory;
a capacitor configured to store charge to be supplied to the nonvolatile semiconductor memory;
a constant current circuit configured to extract the charge from the capacitor at a constant current; and
a controller configured to calculate a capacitance value of the capacitor and a resistance value of a leakage resistance through which a leakage current of the capacitor flows, based on:
a terminal voltage of the capacitor;
a first differential voltage and a first elapsed time in a first period during which a natural discharge measurement is performed; and
a second differential voltage and a second elapsed time in a second period during which a constant current measurement is performed, wherein
the terminal voltage is measured from a start of the natural discharge measurement until the terminal voltage drops by the first differential voltage and from a start of the constant current measurement until the terminal voltage drops by the second differential voltage, and
the first elapsed time is measured from the start of the natural discharge measurement until the terminal voltage drops by the first differential voltage and the second elapsed time is measured from the start of the constant current measurement until the terminal voltage drops by the second differential voltage.
13. The memory system according to claim 12 , wherein the first and second periods are continuous with each other.
14. The memory system according to claim 12 , wherein an interval period is between the first and second periods and the terminal voltage at the start of the first period is equal to the terminal voltage at the start of the second period.
15. The memory system according to claim 12 , further comprising:
a measurement circuit configured to measure the terminal voltage; and
a timer circuit configured to measure the first and second elapsed times.
16. A method for measuring a capacitance value for a capacitor of a memory system, the method comprising:
measuring terminal voltages of the capacitor in a first period during which the capacitor naturally discharges and a second period during which charge is extracted from the capacitor at a constant current;
measuring a first time required for the terminal voltage to drop by a first amount from an initial value at a start of the first period;
measuring a second time required for the terminal voltage to drop by a second amount from an initial value at a start of the second period; and
calculating a capacitance value of the capacitor based on the measured first time, the measured second time, the first drop amount, and the second drop amount by using a formula including a resistance value of a leakage resistance through which a leakage current of the capacitor flows as a variable in each of the first period and the second period.
17. The method according to claim 16 , wherein the first and second periods are continuous with each other.
18. The method according to claim 16 , wherein an interval period is between the first and second periods and the terminal voltage at the start of the first period is equal to the terminal voltage at the start of the second period.
19. The method according to claim 16 , wherein
the memory system comprises a nonvolatile memory, and
the capacitor is for supplying power to the nonvolatile memory when external power is cutoff.
20. The method according to claim 19 , further comprising:
shifting the memory system to an operating mode preventing further write operations to the nonvolatile memory when the calculated capacitance value is less than a certain value.