Capacitor, semiconductor device, and manufacturing method of semiconductor device
A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a transistor and a capacitor. The transistor includes a metal oxide and a first conductor that is electrically connected to the metal oxide. The capacitor includes a first insulator which is provided over the metal oxide and which the first conductor penetrates; a second insulator provided over the first insulator and including an opening reaching the first insulator and the first conductor; a second conductor in contact with an inner wall of the opening, the first insulator, and the first conductor; a third insulator provided over the second conductor; and a fourth conductor provided over the third insulator. The first insulator has higher capability of inhibiting the passage of hydrogen than the second insulator.
1. A capacitor comprising:
a first insulator;
a first conductor penetrating the first insulator;
a second insulator over the first insulator, the second insulator comprising an opening reaching the first insulator and the first conductor;
a second conductor in direct contact with a top surface of the first insulator, a convex curved surface of the first conductor, and an inner wall of the opening;
a third insulator over the second conductor; and
a third conductor over the third insulator.
2. The capacitor according to claim 1 ,
wherein a thickness of a first region of the first insulator is smaller than a thickness of a second region of the first insulator,
wherein the first insulator and the second conductor are in contact with each other in the first region,
wherein the first insulator and the second conductor are not in contact with each other in the second region, and
wherein the first conductor comprises the convex curved surface in a portion above a top surface of the first region.
3. The capacitor according to claim 1 , wherein the first insulator comprises aluminum and oxygen.
4. A semiconductor device comprising:
a transistor; and
a capacitor,
wherein the transistor comprises:
a metal oxide comprising a channel formation region; and
a first conductor electrically connected to the metal oxide,
wherein the capacitor comprises:
a first insulator over the metal oxide, the first conductor penetrating the first insulator;
a second insulator over the first insulator, the second insulator comprising an opening reaching the first insulator and the first conductor;
a second conductor in direct contact with a top surface of the first insulator, a convex curved surface of the first conductor, and an inner wall of the opening;
a third insulator over the second conductor; and
a third conductor over the third insulator.
5. The semiconductor device according to claim 4 , wherein the first conductor comprises the convex curved surface in a portion above the top surface of the first insulator in contact with the second conductor.
6. The semiconductor device according to claim 4 , wherein a bottom surface of the first conductor and a side surface of the first conductor form an angle of 90° or more in a portion below the top surface of the first insulator in contact with the second conductor.
7. The semiconductor device according to claim 4 ,
wherein a thickness of a first region of the first insulator is smaller than a thickness of a second region of the first insulator,
wherein the first insulator and the second conductor are in contact with each other in the first region, and
wherein the first insulator and the second conductor are not in contact with each other in the second region.
8. The semiconductor device according to claim 4 , wherein the first insulator comprises aluminum and oxygen.
9. The semiconductor device according to claim 4 ,
wherein the second insulator comprises:
a fourth insulator; and
a fifth insulator over the fourth insulator.
10. The semiconductor device according to claim 4 ,
wherein the third conductor fills the opening,
wherein the third conductor comprises a region overlapping with the second insulator, and
wherein average surface roughness of a top surface of the region of the third conductor is 2 nm or less.
11. The semiconductor device according to claim 4 ,
wherein the metal oxide comprises In, an element M, and Zn, and
wherein the element M is Al, Ga, Y, or Sn.