Integrated assemblies, and methods of forming integrated assemblies

1. An integrated assembly comprising:

a memory array region which includes channel material pillars extending through a stack of alternating conductive levels and insulative levels;

a staircase region offset from the memory array region and comprising staggered terminal regions of the conductive levels;

an intervening region between the staircase region and the memory array region, the intervening region being distinct from and non-overlapping the staircase region and the memory array region and comprising a plurality of regions of the stack of alternating conductive levels and insulative levels, the plurality of regions of the stack including a first region of the stack, a second region of the stack and a third region of the stack; the intervening region including slabs of insulative material extending through the stack, and including bridging regions laterally adjacent said slabs; two spaced-apart slabs being along a cross-section; the spaced-apart slabs being a first slab and a second slab; a first bridging region comprising the first region of the stack being between the first and second slabs, a second bridging region comprising the second region of the stack being on an opposing side of the first slab from the first bridging region, and a third bridging region comprising the third region of the stack being on an opposing side of the second slab from the first bridging region;

a first series of slits within the intervening region, each slit comprised by the first series of slits having a depth, a width and a length that exceeds the width with each slit extending lengthwise along the bridging regions and into a plane of the cross-section; the first series including a first slit within the first bridging region, a second slit within the second bridging region and a third slit within the third bridging region;

a second series of slits extending through the slabs, with the slits of the second series being parallel to the slits of the first series; the second series including a fourth slit within the first slab and a fifth slit within the second slab;

first panels within the slits of the first series; and

second panels within the slits of the second series; the second panels being compositionally different from the first panels.

2. The integrated assembly of claim 1 wherein the second panels comprise only a single insulative material, and wherein the first panels comprise two or more insulative materials.

3. The integrated assembly of claim 2 wherein the two or more insulative materials of the first panels include a first insulative material and a second insulative material; and wherein the single insulative material of the first panels is the first insulative material.

4. The integrated assembly of claim 3 wherein the first insulative material comprises silicon dioxide.

5. The integrated assembly of claim 4 wherein the second insulative material comprises doped silicon dioxide.

6. The integrated assembly of claim 4 wherein the second insulative material comprises carbon.

7. The integrated assembly of claim 4 wherein the second insulative material comprises high-k dielectric material.

8. The integrated assembly of claim 4 wherein the second insulative material comprises aluminum oxide.

9. The integrated assembly of claim 1 comprising support pillars extending through the slabs.

10. The integrated assembly of claim 9 wherein the support pillars comprise metal.

11. The integrated assembly of claim 10 wherein the metal is laterally surrounded by a same composition present in the first panels.

12. The integrated assembly of claim 11 wherein said same composition comprises silicon dioxide.

13. The integrated assembly of claim 12 wherein said same composition is also present in the second panels.

14. The integrated assembly of claim 1 wherein the first slab is within a first block region, and wherein the second slab is within a second block region.