Surface processing method and processing system
There is provided a method of performing a surface processing on a substrate having a metal layer formed on a bottom portion of a recess formed in an insulating film, the method including: supplying a halogen-containing gas into a processing chamber in which the substrate is loaded; and removing a metal oxide from the bottom portion of the recess using the halogen-containing gas.
1. A method of performing a surface processing on a substrate having a metal layer formed on a bottom portion of a recess formed in an insulating film, the method comprising:
supplying a halogen-containing gas into a processing chamber in which the substrate is loaded;
removing a metal oxide film from the bottom portion of the recess using the halogen-containing gas; and
after the removing the metal oxide film, forming a metal film on the bottom portion of the recess by alternately supplying the halogen-containing gas and a hydrogen gas into the processing chamber,
wherein in the forming the metal film, a halogen-containing substance, which has remained in the processing chamber as a reaction product generated during the removing the metal oxide film, is reacted with the hydrogen gas, and is removed,
wherein the metal oxide film is a tungsten oxide film, and the metal film is a tungsten film, and
wherein the halogen-containing gas is WF 6 , and the halogen-containing substance is a fluorine-containing substance.
2. The method of claim 1 , wherein the metal layer is made of tungsten.
3. The method of claim 1 , wherein the insulating film is a silicon-containing film.
4. The method of claim 3 , wherein the silicon-containing film is at least one of a silicon oxide film and a silicon nitride film.
5. The method of claim 1 , further comprising: supplying a gas containing ruthenium toward the bottom portion of the recess to embed the ruthenium from the bottom portion of the recess.
6. The method of claim 5 , wherein the embedding the ruthenium is performed without having to use an oxygen gas.
7. The method of claim 5 , wherein the ruthenium-containing gas is any of a gas containing Ru 3 (CO) 12 , (2,4-dimethylpentadienyl)(ethylcyclopentadienyl)ruthenium; (Ru(DMPD)(EtCp)), bis(2,4-dimethylpentadienyl)Ruthenium: (Ru(DMPD) 2 ), 4-dimethylpentadienyl(methylcyclopentadienyl)Ruthenium: (Ru(DMPD)(MeCp)), Bis(Cyclopentadienyl)Ruthenium: (Ru(C 5 H 5 ) 2 ), Cis-dicarbonylbis(5-methylhexane-2,4-dionate)ruthenium(II), and bis(ethylcyclopentadienyl)Ruthenium(II): Ru(EtCp) 2 .
8. The method of claim 5 , wherein the removing the metal oxide film to the embedding the ruthenium are continuously performed without exposing the substrate to air.
9. The method of claim 1 , wherein the removing the metal oxide film and the forming the metal film on the bottom portion of the recess are performed in a same processing chamber.
10. The method of claim 1 , wherein the removing the metal oxide film is performed using a chemical etching method in which no plasma is used.
11. The method of claim 9 , wherein the forming the metal film on the bottom portion of the recess is performed using an atomic layer deposition method in which no plasma is used.