Gallium arsenide radio frequency circuit and millimeter wave front-end module
A gallium arsenide (GaAs) radio frequency (RF) circuit is disclosed. The GaAs RF circuit includes a power amplifier and a low noise amplifier; a first transmit/receive (TR) switch, coupled to the power amplifier and the low noise amplifier, wherein the first TR switch is fabricated by a pHEMT (Pseudomorphic High Electron Mobility Transistor) process; and a first active phase shifter, coupled to the power amplifier or the low noise amplifier, wherein the first active phase shifter is fabricated by an HBT (Heterojunction Bipolar Transistor) process; wherein the GaAs RF circuit is formed within a GaAs die.
1. A gallium arsenide (GaAs) radio frequency (RF) circuit, comprising:
a power amplifier or a low noise amplifier;
a first transmit/receive (TR) switch, coupled to the power amplifier or the low noise amplifier, wherein the first TR switch is fabricated by a pHEMT (Pseudomorphic High Electron Mobility Transistor) process; and
a first active phase shifter, coupled to the power amplifier or the low noise amplifier, wherein the first active phase shifter is fabricated by an HBT (Heterojunction Bipolar Transistor) process;
wherein the GaAs RF circuit is formed within a GaAs die.
2. The GaAs RF circuit of claim 1 , wherein the first active phase shifter comprises a plurality of variable gain amplifiers fabricated by the HBT process.
3. The GaAs RF circuit of claim 1 , further comprising a first variable gain amplifier, coupled to the power amplifier or the low noise amplifier.
4. The GaAs RF circuit of claim 3 , wherein the first variable gain amplifier is fabricated by the HBT process.
5. The GaAs RF circuit of claim 3 , further comprising:
a second variable gain amplifier;
wherein the first variable gain amplifier is coupled to the power amplifier and the second variable gain amplifier is coupled to the low noise amplifier.
6. The GaAs RF circuit of claim 1 , wherein the power amplifier or the low noise amplifier is fabricated by the pHEMT process.
7. The GaAs RF circuit of claim 1 , wherein the power amplifier or the low noise amplifier is fabricated by the HBT process.
8. The GaAs RF circuit of claim 1 , further comprising:
a second active phase shifter, coupled to the power amplifier or the low noise amplifier wherein the second active phase shifter is fabricated by the HBT process; and
a second TR switch, coupled to the power amplifier and the low noise amplifier, wherein the second TR switch is fabricated by the pHEMT process.
9. A millimeter wave front-end module, comprising:
a plurality of antennas, wherein a spacing between the plurality of antennas is less than or equal to a half of a wavelength corresponding to an operating frequency at which the millimeter wave front-end module operates; and
a gallium arsenide (GaAs) die, disposed between the plurality of antennas, comprising a plurality of GaAs radio frequency (RF) circuits, each GaAs RF circuit comprising:
a power amplifier or a low noise amplifier;
a first transmit/receive (TR) switch, coupled to the power amplifier or the low noise amplifier, wherein the first TR switch is fabricated by a pHEMT (Pseudomorphic High Electron Mobility Transistor) process; and
a first active phase shifter, coupled to the power amplifier or the low noise amplifier, wherein the first active phase shifter is fabricated by an HBT (Heterojunction Bipolar Transistor) process;
wherein a GaAs RF circuit is coupled to an antenna.
10. The millimeter wave front-end module of claim 9 , wherein the first active phase shifter comprises a plurality of variable gain amplifiers fabricated by the HBT process.
11. The millimeter wave front-end module of claim 9 , wherein the each GaAs RF circuit further comprises a first variable gain amplifier, coupled to the power amplifier or the low noise amplifier.
12. The millimeter wave front-end module of claim 11 , wherein the first variable gain amplifier is fabricated by the HBT process.
13. The millimeter wave front-end module of claim 11 , wherein the each GaAs RF circuit further comprises:
a second variable gain amplifier;
wherein the first variable gain amplifier is coupled to the power amplifier and the second variable gain amplifier is coupled to the low noise amplifier.
14. The millimeter wave front-end module of claim 9 , wherein the power amplifier or the low noise amplifier is fabricated by the pHEMT process.
15. The millimeter wave front-end module of claim 9 , wherein the power amplifier or the low noise amplifier is fabricated by the HBT process.
16. The millimeter wave front-end module of claim 9 , wherein the each GaAs RF circuit further comprises:
a second active phase shifter, coupled to the power amplifier or the low noise amplifier wherein the second active phase shifter is fabricated by the HBT process; and
a second TR switch, coupled to the power amplifier and the low noise amplifier, wherein the second TR switch is fabricated by the pHEMT process.