IP Library › Granted Patent US 11,387,265
Granted Patent B2
US 11,387,265 · App. 16/643,940 · Granted Jul 12, 2022

Image capturing element and image capturing device

Inventor: Shinichiro Noudo (Kumamoto, JP)
Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
H01L27/14605H01L27/14621H01L27/14812H04N5/359H04N5/374
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Quick Facts
Patent No.
US 11,387,265
App. No.
16/643,940
Granted
Jul 12, 2022
Kind
B2
Abstract

To reduce occurrence of crosstalk in a back-illuminated image capturing element. An image capturing element includes: a pixel including a photoelectric conversion section, a pixel circuit, and a wiring layer; and a polarization section. The photoelectric conversion section is formed on a semiconductor substrate and performs photoelectric conversion based on incident light. The pixel circuit generates an image signal according to a charge generated by the photoelectric conversion. The wiring layer is arranged on a surface of the semiconductor substrate and is configured to transmit any one of the image signal or a signal applied to the pixel circuit, the surface being different from a surface of the semiconductor substrate on which the incident light is incident. The polarization section is arranged between the semiconductor substrate and the wiring layer, and allows transmission of light in a specific polarization direction among incident light transmitted through the photoelectric conversion section.

Claims (46)

1. An image capturing element, comprising:

a plurality of pixels, wherein each of the plurality of pixels includes:

a photoelectric conversion section on a semiconductor substrate, wherein the photoelectric conversion section is configured to generate a charge based on photoelectric conversion of incident light;

a pixel circuit configured to generate an image signal based on the generated charge;

a wiring layer on a surface of the semiconductor substrate, wherein

the wiring layer is configured to transmit one of the image signal or a signal applied to the pixel circuit, and

the surface is different from a surface of the semiconductor substrate on which the incident light is incident; and

a first polarization section between the semiconductor substrate and the wiring layer, wherein

the first polarization section is configured to transmit light corresponding to the incident light transmitted through the photoelectric conversion section,

the light is transmitted in a first polarization direction,

the first polarization direction of the first polarization section in a first pixel of the plurality of pixels is different from the first polarization direction of the first polarization section in a second pixel of the plurality of pixels, and

the second pixel is adjacent to the first pixel.

2. The image capturing element according to claim 1 , wherein the first polarization section is configured with a wire grid.

3. The image capturing element according to claim 1 , wherein each pixel of the plurality of pixels comprises a plurality of polarization sections between the semiconductor substrate and the wiring layer.

4. The image capturing element according to claim 3 , wherein, for each of the plurality of pixels, each polarization section of the plurality of polarization sections is configured to transmit the light in the first polarization direction.

5. The image capturing element according to claim 1 , wherein the first polarization section and the wiring layer are on a same level.

6. The image capturing element according to claim 1 , wherein the

plurality of the pixels is in a two-dimensional arrangement.

7. The image capturing element according to claim 6 , wherein each of the plurality of pixels further includes one of a plurality of color filters configured to:

transmit the incident light associated with a specific wavelength; and

allow the transmitted incident light to be incident on the photoelectric conversion section.

8. The image capturing element according to claim 7 , wherein

the first pixel includes a first color filter of the plurality of color filters,

the second pixel includes a second color filter of the plurality of color filters, and

the first color filter is different from the second color filter.

9. The image capturing element according to claim 7 , wherein the one of a plurality of color filters is a color filter configured to transmit red light.

10. The image capturing element according to claim 7 , wherein the one of a plurality of color filters is a color filter configured to transmit white light.

11. The image capturing element according to claim 7 , wherein the one of a plurality of color filters is a color filter configured to transmit infrared light.

12. The image capturing element according to claim 1 , wherein each of the plurality of pixels further includes a second polarization section configured to:

transmit the incident light in a second polarization direction; and

allow the transmitted incident light to be incident on the photoelectric conversion section.

13. The image capturing element according to claim 12 , wherein the second polarization direction of the second polarization section is same as the first polarization direction of the first polarization section corresponding to a pixel of the second polarization section.

14. The image capturing element according to claim 12 , wherein the second polarization direction of the second polarization section is different from the first polarization direction of the first polarization section corresponding to a pixel of the second polarization section.

15. An image capturing device, comprising:

a plurality of pixels, wherein each of the plurality of pixels includes:

a photoelectric conversion section on a semiconductor substrate, wherein the photoelectric conversion section is configured to generate a charge based on photoelectric conversion of incident light;

a pixel circuit configured to generate an image signal based on the generated charge;

a wiring layer on a surface of the semiconductor substrate, wherein

the wiring layer is configured to transmit one of the image signal or a signal applied to the pixel circuit, and

the surface is different from a surface of the semiconductor substrate on which the incident light is incident;

a polarization section between the semiconductor substrate and the wiring layer, wherein

the polarization section is configured to transmit light corresponding to the incident light transmitted through the photoelectric conversion section,

the light is transmitted in a specific polarization direction,

the specific polarization direction of the polarization section in a first pixel of the plurality of pixels is different from the specific polarization direction of the polarization section in a second pixel of the plurality of pixels, and

the second pixel is adjacent to the first pixel; and

a processing circuit configured to process the image signal.

Assignments (2)
CORRECTIVE ASSIGNMENT TO CORRECT THE ASSIGNEE NAME FROM SONY CORPORATION TO SONY SEMICONDUCTOR SOLUTIONS COMPANY, 4-14-1 ASAHI-CHO, KANAGAWA, JAPAN PREVIOUSLY RECORDED ON REEL 054575 FRAME 0377. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT. Recorded Jan 13, 2021
From: NOUDO, SHINICHIRO
To: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
Reel/Frame 054979/0900 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 8, 2020
From: NOUDO, SHINICHIRO
To: SONY CORPORATION
Reel/Frame 054575/0377 →
Priority Claims (1)
JP JP2017-217885 · Nov 13, 2017 · national
Continuity (1)
Related Publication 20200411570A1 · Dec 31, 2020
Cited By (1)
US 12,666,740