Display device, electronic apparatus, and display device manufacturing method
An embodiment provides a display device including an insulating layer which is continuous between opposed ends of two adjacent lower electrodes from an upper part of one of the ends to an upper part of the other end, a first organic layer which is disposed over the lower electrodes and the insulating layer, a second organic layer which is disposed over the lower electrodes and the insulating layer with the first organic layer interposed therebetween and includes a light emitting layer, and a second electrode which covers the organic layer. The upper face of the insulating layer includes a recess between the two lower electrodes. The aspect ratio of the recess is 0.5 or more.
1. A light emitting device comprising:
a substrate;
a drive circuit layer including a first transistor, a second transistor, and an isolation region disposed between the first transistor and the second transistor;
a first insulating layer including a main surface and disposed on the drive circuit layer;
a first lower electrode and a second lower electrode, both disposed on the main surface of the first insulating layer;
a second insulating layer disposed between the first lower electrode and the second lower electrode, on an end of the first lower electrode, and on an end of the second lower electrode;
an organic layer disposed on the first lower electrode, the second insulating layer, and the second lower electrode; and
an upper electrode disposed on the organic layer,
wherein each of the first transistor, the second transistor, and the isolation region is formed inside the substrate,
wherein the second insulating layer includes a first part located on the end of the first lower electrode, a second part located on the end of the second lower electrode, and a third part continuous from the first part to the second part, and
wherein, in a planar view from a first direction which is perpendicular to the main surface, the third part of the second insulating layer and the isolation region are overlapped.
2. The light emitting device according to claim 1 ,
wherein an upper face of the third part of the second insulating layer includes a first recess between the first lower electrode and the second lower electrode, and
wherein, in the planar view from the first direction, the first recess and the isolation region are overlapped.
3. The light emitting device according to claim 1 , wherein the first insulating layer includes a second recess in a region between the first lower electrode and the second lower electrode on the first insulating layer.
4. The light emitting device according to claim 3 , wherein, in the planar view from the first direction, the second recess and the isolation region are overlapped.
5. The light emitting device according to claim 2 , wherein a length of the first recess in the first direction is 0.5 times or more a length of the first recess in a second direction perpendicular to the first direction.
6. The light emitting device according to claim 2 , wherein a length of the first recess in the first direction is longer than a length of the first recess in a second direction perpendicular to the first direction.
7. The light emitting device according to claim 2 , wherein the first insulating layer includes a plurality of recesses.
8. A light emitting device comprising:
a substrate;
a drive circuit layer including a first transistor, a second transistor, and an isolation region disposed between the first transistor and the second transistor;
a first insulating layer including a main surface and disposed on the drive circuit layer;
a first lower electrode and a second lower electrode, both disposed on the main surface of the first insulating layer;
a second insulating layer disposed between the first lower electrode and the second lower electrode, on an end of the first lower electrode, and on an end of the second lower electrode;
an organic layer disposed on the first lower electrode, the second insulating layer, and the second lower electrode;
an upper electrode disposed on the organic layer; and
a cavity disposed over the second insulating layer and disposed under the upper electrode,
wherein each of the first transistor, the second transistor, and the isolation region is formed inside the substrate, and
wherein, in a planar view from a first direction which is perpendicular to the main surface, the cavity is disposed between the first lower electrode and the second lower electrode, and the cavity and the isolation region are overlapped.
9. The light emitting device according to claim 8 , wherein the first insulating layer includes a recess in a region between the first lower electrode and the second lower electrode on the first insulating layer.
10. The light emitting device according to claim 8 , wherein the first insulating layer includes a plurality of recesses.
11. The light emitting device according to claim 1 , further comprising a conductive member disposed between the first insulating layer and the second insulating layer,
wherein, in the planar view from the first direction, the conductive member is disposed between the first lower electrode and the second lower electrode.
12. The light emitting device according to claim 11 , wherein the conductive member includes the same material as the first lower electrode and the second lower electrode.
13. The light emitting device according to claim 2 , wherein a film thickness of the organic layer inside the first recess is smaller than a film thickness of the organic layer on the second insulating layer.
14. The light emitting device according to claim 1 , wherein the first insulating layer is disposed on the substrate, and the substrate is opaque.
15. An electronic apparatus comprising:
the light emitting device according to claim 1 ; and
a control unit configured to input a signal to the light emitting device.
16. An electronic apparatus comprising:
the light emitting device according to claim 8 ; and
a control unit configured to input a signal to the light emitting device.
17. The light emitting device according to claim 1 , wherein at least a part of each of the first transistor and the second transistor is formed inside the substrate.
18. The light emitting device according to claim 8 , wherein at least a part of each of the first transistor and the second transistor is formed inside the substrate.
19. The light emitting device according to claim 1 , wherein each of the first transistor and the second transistor is a metal-oxide-silicon (MOS) transistor.
20. The light emitting device according to claim 8 , wherein each of the first transistor and the second transistor is a metal-oxide-silicon (MOS) transistor.