Light-emitting device and display device
A light-emitting device includes: a semiconductor stacked body comprising a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer stacked in this order; a first insulating film that covers the active layer and the second conductive semiconductor layer; a first conductive layer that continuously surrounds a lateral surface of the first conductive semiconductor layer that is exposed from the first insulating film; a second insulating film that covers the first conductive layer, the active layer, and the second conductive semiconductor layer and that has a hole disposed above the second conductive semiconductor layer; and a second conductive layer that continuously covers, via the second insulating film, an end portion of the first conductive layer located in proximity to an end portion of the second conductive semiconductor layer, wherein the second conductive layer is connected to an upper surface of the second conductive semiconductor layer through the hole.
1. A light-emitting device comprising:
a semiconductor stacked body comprising a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer stacked in this order;
a first insulating film that covers the active layer and the second conductive semiconductor layer, wherein a portion of an outer lateral surface of the first conductive semiconductor layer is exposed from the first insulating film;
a first conductive layer that continuously surrounds and directly contacts the portion of the outer lateral surface of the first conductive semiconductor layer that is exposed from the first insulating film;
a second insulating film that covers the first conductive layer, the active layer, and the second conductive semiconductor layer and that has a hole disposed above the second conductive semiconductor layer, wherein the second conductive semiconductor layer is exposed from the second insulating film through the hole; and
a second conductive layer that continuously covers, via the second insulating film, an end portion of the first conductive layer located in proximity to an end portion of the second conductive semiconductor layer;
wherein, in a plane that is perpendicular to a stacking direction of the semiconductor stacked body and below the active layer:
the end portion of the first conductive layer is located between a portion of the first insulating film and a portion of the second insulating film, and
the portion of the second insulating film is located between the end portion of the first conductive layer and a portion of the second conductive layer; and
wherein the second conductive layer is connected to an upper surface of the second conductive semiconductor layer through the hole.
2. The light-emitting device according to claim 1 , wherein:
the first conductive layer comprises a first pad section that is positioned, in a top view, on an outer side of a region where the semiconductor stacked body is arranged,
the second conductive layer comprises a second pad section that is positioned, in a top view, on an outer side of the region where the semiconductor stacked body is arranged, and
the light-emitting device further comprises:
a first metallic section, an entirety of which is disposed on the first pad section; and
a second metallic section, an entirety of which is disposed on the second pad section.
3. The light-emitting device according to claim 2 , further comprising:
a light-shielding resin layer disposed so as to cover the semiconductor stacked body, the first metallic section, and the second metallic section,
wherein a part of the first metallic section and a part of the second metallic section are exposed from the resin layer above the semiconductor stacked body.
4. The light-emitting device according to claim 1 , wherein:
the active layer comprises a first well layer that is disposed on an upper surface of the first conductive semiconductor layer, and a second well layer that is disposed on a lateral surface of the first conductive semiconductor layer and that is connected to an outer edge of the first well layer, and
a film thickness of the first well layer is greater than a film thickness of the second well layer.
5. The light-emitting device according to claim 2 , wherein:
the active layer comprises a first well layer that is disposed on an upper surface of the first conductive semiconductor layer, and a second well layer that is disposed on a lateral surface of the first conductive semiconductor layer and that is connected to an outer edge of the first well layer, and
a film thickness of the first well layer is greater than a film thickness of the second well layer.
6. The light-emitting device according to claim 3 , wherein:
the active layer comprises a first well layer that is disposed on an upper surface of the first conductive semiconductor layer, and a second well layer that is disposed on a lateral surface of the first conductive semiconductor layer and that is connected to an outer edge of the first well layer, and
a film thickness of the first well layer is greater than a film thickness of the second well layer.
7. The light-emitting device according to claim 1 , further comprising:
a single crystal substrate on which the semiconductor stacked body is disposed,
wherein the substrate has an opening in a location, in a top view, corresponding to the region where the semiconductor stacked body is disposed, and
a wavelength-converting member is disposed inside the opening.
8. The light-emitting device according to claim 2 , further comprising:
a substrate on which the semiconductor stacked body is disposed,
wherein the substrate has an opening in a location, in a top view, corresponding to the region where the semiconductor stacked body is disposed, and
a wavelength-converting member is disposed inside the opening.
9. The light-emitting device according to claim 3 , further comprising:
a substrate on which the semiconductor stacked body is disposed,
wherein the substrate has an opening in a location, in a top view, corresponding to the region where the semiconductor stacked body is disposed, and
a wavelength-converting member is disposed inside the opening.
10. The light-emitting device according to claim 7 , wherein:
the wavelength-converting member comprises a base material and a phosphor, and
the phosphor is unevenly distributed toward the semiconductor stacked body in the base material.
11. The light-emitting device according to claim 8 , wherein:
the wavelength-converting member comprises a base material and a phosphor, and
the phosphor is unevenly distributed toward the semiconductor stacked body in the base material.
12. The light-emitting device according to claim 9 , wherein:
the wavelength-converting member comprises a base material and a phosphor, and
the phosphor is unevenly distributed toward the semiconductor stacked body in the base material.
13. A display device comprising:
a mounting substrate; and
a plurality of the light-emitting devices according to claim 7 arranged on the mounting substrate.
14. A display device comprising:
a mounting substrate; and
a plurality of the light-emitting devices according to claim 8 arranged on the mounting substrate.
15. A display device comprising:
a mounting substrate; and
a plurality of the light-emitting devices according to claim 10 arranged on the mounting substrate.
16. A display device comprising:
a mounting substrate; and
a plurality of the light-emitting devices according to claim 11 arranged on the mounting substrate.
17. The light-emitting device according to claim 1 , wherein:
said portion of the second insulating film directly contacts an outer lateral surface of the end portion of the first conductive layer and an inner lateral surface of said portion of the second conductive layer.
18. The light-emitting device according to claim 2 , wherein:
a first additional insulating film portion is located outward of the semiconductor stacked body below the first metallic section, and
a second additional insulating film portion is located outward of the semiconductor stacked body below the second metallic section.